Light emitting element
A light emitting element comprising a layered structure configured by layering a first light reflecting layer 41 configured by layering a plurality of thin films, a light emitting structure 20 , and a second light reflecting layer 42 configured by layering a plurality of thin films, wherein the light emitting structure 20 is configured by layering, from the first light reflecting layer side, a first compound semiconductor layer 21 , an active layer 23 , and a second compound semiconductor layer 22 , a second electrode 32 and an intermediate layer 70 are formed between the second compound semiconductor layer 22 and the second light reflecting layer 42 from the second compound semiconductor layer side, and the value of a surface roughness of a second surface 72 of the intermediate layer 70 in contact with the second light reflecting layer 42 is less than the value of a surface roughness of a first surface 71 of the intermediate layer 70 facing the second electrode 32.
1. A light emitting element, comprising:
a layered structure that includes:
a first light reflecting layer that includes a first plurality of thin films;
a light emitting structure; and
a second light reflecting layer that includes a second plurality of thin films, wherein
the light emitting structure is between the first light reflecting layer and the second light reflecting layer, and
the light emitting structure includes:
a first compound semiconductor layer on the first light reflecting layer;
an active layer on the first compound semiconductor layer; and
a second compound semiconductor layer on the active layer;
an intermediate layer between the second compound semiconductor layer and the second light reflecting layer; and
an electrode between the intermediate layer and the second compound semiconductor layer, wherein
a first surface of the intermediate layer faces the electrode,
a second surface of the intermediate layer is in contact with the second light reflecting layer, and
a value of a surface roughness of the second surface of the intermediate layer is less than a value of a surface roughness of the first surface of the intermediate layer.
2. The light emitting element according to claim 1 , wherein
a value of a root mean square roughness Rq of a region of the first surface of the intermediate layer is 1.0 nm or less, and
the region is within a radius of 20 μm from a light emitting center of the light emitting element.
3. The light emitting element according to claim 1 , wherein
a value of a root mean square roughness Rq of a region of the first surface of the intermediate layer is 1.0 nm or less, and
in the region, a light emission intensity is (1/e) or more of a maximum light emitting intensity.
4. The light emitting element according to claim 1 , wherein
a value of a root mean square roughness Rq of a region of the first surface of the intermediate layer is 2.0 nm or less, and
the region is within a radius of 1 μm from a light emitting center of the light emitting element.
5. The light emitting element according to claim 1 , wherein
an optical thickness of the intermediate layer is larger than an optical thickness of a first thin film of the second plurality of thin films of the second light reflecting layer, and
the first thin film of the second light reflecting layer is in contact with the intermediate layer.
6. The light emitting element according to claim 5 , wherein
the intermediate layer has a thickness exceeding (λ 0 /4 n M ), and
the first thin film of the second light reflecting layer has a thickness of (λ 0 /4n 1 ),
where
n M is a refractive index of a material of the intermediate layer,
n 1 is a refractive index of a material of the first thin film of the second light reflecting layer, and
λ 0 is a wavelength of main light emitted from the light emitting element.
7. The light emitting element according to claim 6 , wherein the intermediate layer has a thickness of (λ 0 /2 n M ) or more.
8. The light emitting element according to claim 1 , wherein
0.8<n 0 /n M <1.2 is satisfied,
where
n 0 is a refractive index of a material of the electrode, and
n M is a refractive index of a material of the intermediate layer.
9. The light emitting element according to claim 8 , wherein 0.95<n 0 /n M <1.05 is satisfied.
10. The light emitting element according to claim 1 , wherein
|n 0 −n M |≤0.1 is satisfied,
where
n 0 is a refractive index of a material of the electrode, and
n M is a refractive index of a material of the intermediate layer.
11. The light emitting element according to claim 1 , wherein
a material of the intermediate layer is different from a material of a first thin film of the second plurality of thin films of the second light reflecting layer,
the first thin film of the second light reflecting layer is in contact with the intermediate layer,
the material of the intermediate layer is same as a material of a second thin film of the second plurality of thin films of the second light reflecting layer, and
the second thin film of the second light reflecting layer is in contact with the first thin film of the second light reflecting layer.
12. The light emitting element according to claim 1 , wherein
a material of the intermediate layer is different from a material of a first thin film of the second plurality of thin films of the second light reflecting layer,
the first thin film of the second light reflecting layer is in contact with the intermediate layer,
the material of the intermediate layer is different from a material of a second thin film of the second plurality of thin films of the second light reflecting layer,
the second thin film of the second light reflecting layer is in contact with the first thin film of the second light reflecting layer, and
the material of the first thin film of the second light reflecting layer is different from the material of the second thin film of the second light reflecting layer.
13. The light emitting element according to claim 1 , wherein
the active layer is in a vicinity of a maximum amplitude portion of a light field intensity distribution of light emitted from the light emitting element, and
the intermediate layer is in a vicinity of a minimum amplitude portion of the light field intensity distribution.
14. The light emitting element according to claim 1 , further comprising a substrate, wherein
the first compound semiconductor layer is on a surface of the substrate, and
the surface of the substrate has a plurality of parallel grooves.
15. The light emitting element according to claim 14 , wherein the substrate includes a GaN substrate having a {20-21} plane as a main surface.
16. A light emitting element, comprising:
a substrate, wherein a surface of the substrate has a plurality of grooves;
a layered structure that includes:
a first light reflecting layer that includes a first plurality of thin films;
a light emitting structure; and
a second light reflecting layer that includes a second plurality of thin films,
wherein the light emitting structure is between the first light reflecting layer and the swecond light reflecting layer, and
the light emitting structure includes:
a first compound semiconductor layer on the first light reflecting layer and the surface of the substrate;
an active layer on the first compound semiconductor layer; and
a second compound semiconductor layer on the active layer; an intermediate layer between the second compound semiconductor layer and the second light reflecting layer; and
an electrode between the intermediate layer and the second compound semiconductor layer, wherein a first surface of the intermediate layer faces the electrode, a second surface of the intermediate layer is in contact with the second light reflecting layer, and a value of a surface roughness of the second surface of the intermediate layer is less than a value of a surface roughness of the first surface of the intermediate layer.