Solid-state imaging device and imaging device

1. A solid-state imaging device comprising:

a plurality of photoelectric conversion elements arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount;

a detection circuit that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements;

a first chip on which the photoelectric conversion elements are disposed; and

a different second chip on which at least a part of the detection circuit is disposed, the second chip being joined to the first chip; and

wherein the detection circuit includes a current-voltage conversion circuit that includes a source follower circuit having a loop shape, the source follower circuit being disposed on the second chip and including:

a first transistor having a source thereof connected to the photoelectric conversion elements, and

a second transistor having a gate thereof connected to the photoelectric conversion elements and having a drain thereof connected to a gate of the first transistor.

2. The solid-state imaging device according to claim 1 , further comprising:

a logic circuit connected to the detection circuit; and

wherein the logic circuit is disposed on a third chip different from the first chip and from the second chip.

3. The solid-state imaging device according to claim 1 , further comprising:

a driving circuit that controls readout of the charges from the photoelectric conversion elements; and

wherein the driving circuit is disposed on the second chip.

4. The solid-state imaging device according to claim 1 , further comprising:

a generation circuit that generates a pixel signal that has a voltage value corresponding to a charge amount of the charge generated in each of the photoelectric conversion elements; and

wherein the generation circuit is disposed on the second chip.

5. The solid-state imaging device according to claim 4 , further comprising:

a third transistor disposed between the photoelectric conversion elements and the generation circuit; and

wherein the third transistor is disposed on the first chip.

6. The solid-state imaging device according to claim 1 , wherein each of the first transistor and the second transistor includes a respective MOS (Metal-Oxide-Semiconductor) transistor.

7. The solid-state imaging device according to claim 1 , wherein each of the first transistor and the second transistor includes a respective terminal to which a reverse bias is to be applied.

8. The solid-state imaging device according to claim 7 , wherein the second chip includes an SOI (Silicon On Insulator) substrate.

9. The solid-state imaging device according to claim 1 , wherein each of the first transistor and the second transistor includes a respective tunneling FET (Field effect transistor) of FinFET.

10. An imaging device comprising:

a solid-state imaging device;

an optical system that forms an image of incident light on a light reception surface of the solid-state imaging device; and

a control circuit that controls the solid-state imaging device;

wherein the solid-state imaging device includes:

a plurality of photoelectric conversion elements arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount,

a detection circuit that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements,

a first chip on which the photoelectric conversion elements are disposed;

a different second chip on which at least a part of the detection circuit is disposed; and

a generation circuit that generates a pixel signal that has a voltage value corresponding to a charge amount of the charge generated in each of the photoelectric conversion elements, the generation circuit being disposed on a third chip joined between the first chip and the second chip.

11. A solid-state imaging device comprising:

a plurality of photoelectric conversion elements arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount;

a detection circuit that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements;

a first chip on which the photoelectric conversion elements are disposed; and

a different second chip on which at least a part of the detection circuit is disposed, the second chip being joined to the first chip;

wherein the detection circuit includes a current-voltage conversion circuit that includes a source follower circuit having a loop shape, the source follower circuit being disposed on the second chip; and

wherein the solid-state imaging device further comprises a transistor connected between the photoelectric conversion elements and the detection circuit, the transistor being disposed on the first chip.

12. A solid-state imaging device comprising:

a plurality of photoelectric conversion elements arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount;

a detection circuit that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements;

a first chip on which the photoelectric conversion elements are disposed; and

a different second chip on which at least a part of the detection circuit is disposed, the second chip being joined to the first chip;

wherein the detection circuit includes a current-voltage conversion circuit that includes a source follower circuit having a loop shape, the source follower circuit being disposed on the second chip; and

wherein the solid-state imaging device further comprises a generation circuit that generates a pixel signal that has a voltage value corresponding to a charge amount of the charge generated in each of the photoelectric conversion elements, the generation circuit being disposed on a third chip joined between the first chip and the second chip.

13. A solid-state imaging device comprising:

a plurality of photoelectric conversion elements arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount;

a detection circuit that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements;

a first chip on which the photoelectric conversion elements are disposed; and

a different second chip on which at least a part of the detection circuit is disposed, the second chip being joined to the first chip;

wherein the detection circuit includes a current-voltage conversion circuit that includes a source follower circuit having a loop shape, the source follower circuit being disposed on the second chip;

wherein the solid-state imaging device further comprises a generation circuit that generates a pixel signal that has a voltage value corresponding to a charge amount of the charge generated in each of the photoelectric conversion elements, the generation circuit being disposed on the second chip;

wherein the plurality of photoelectric conversion elements are divided into a plurality of groups, each of the groups including one or more photoelectric conversion elements; and

wherein the detection circuit and the generation circuit are provided for each of the groups.

14. The solid-state imaging device according to claim 13 , wherein each of the groups includes a respective combination of the photoelectric conversion elements receiving different wavelength components of light.

15. The solid-state imaging device according to claim 13 , wherein:

the detection circuit is connected to a first group in the plurality of groups;

the generation circuit is connected to a second group in the plurality of groups; and

at least one of the photoelectric conversion elements belonging to the first group also belongs the second group.

16. A solid-state imaging device comprising:

a plurality of photoelectric conversion elements arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount;

a detection circuit that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements;

a first chip on which the photoelectric conversion elements are disposed; and

a different second chip on which at least a part of the detection circuit is disposed, the second chip being joined to the first chip;

wherein the detection circuit includes a current-voltage conversion circuit that includes a source follower circuit having a loop shape, the source follower circuit being disposed on the second chip;

wherein the solid-state imaging device further comprises a hydrogen supply film provided on the second chip and supplying hydrogen atoms; and

wherein the solid-state imaging device further comprises a diffusion preventive film interposed between the first chip and the second chip and preventing diffusion of the hydrogen atoms from the second chip to the photoelectric conversion elements.