Imaging element and electronic equipment
The present technology relates to an imaging element and electronic equipment that enable an increase in the amount of saturated charge. The imaging element includes a substrate, a first photoelectric conversion region adjacent a second photoelectric conversion region in the substrate, a pixel isolation section between the first photoelectric conversion region and the second photoelectric conversion region, and a junction region in a side wall of the pixel isolation section, the junction region including a first impurity region including first impurities and a second impurity region including second impurities. The length of a side of the first impurity region, the side perpendicularly intersecting two parallel sides of four sides of the pixel isolation section enclosing the first photoelectric conversion region, is larger than the length between the two parallel sides of the pixel isolation section. The present technology is applicable to, for example, an imaging apparatus.
1. An imaging element, comprising:
a substrate;
a first photoelectric conversion region provided in the substrate;
a second photoelectric conversion region provided in the substrate, the second photoelectric conversion region being adjacent to the first photoelectric conversion region;
a pixel isolation section provided in the substrate and between the first photoelectric conversion region and the second photoelectric conversion region; and
a junction region provided in a side wall of the pixel isolation section, the junction region including a first impurity region including first impurities and a second impurity region including second impurities,
wherein a length of a side of the first impurity region formed in a side wall of the pixel isolation section, the side perpendicularly intersecting two parallel sides of four sides of the pixel isolation section enclosing the first photoelectric conversion region, is larger than a length between the two parallel sides of the pixel isolation section,
wherein the first impurity region includes protruding portions on the second impurity region side, and
wherein a horizontal portion of the protruding portions has a greater length than a vertical surface of the protruding portions furthest from the pixel isolation section in a plan view.
2. The imaging element according to claim 1 , wherein, when the length between the two parallel sides of the pixel isolation section is used as a reference, the length of the side of the first impurity region is at least 1.3 times as large as the length between the two parallel sides of the pixel isolation section.
3. The imaging element according to claim 1 , wherein the pixel isolation section includes protruding portions.
4. The imaging element according to claim 1 , wherein each of the protruding portions is formed in a rectangular shape.
5. The imaging element according to claim 1 , wherein a junction surface between the first impurity region and the second impurity region is shaped to include recesses and protrusions.
6. The imaging element according to claim 1 , wherein a wall surface of the pixel isolation section is shaped to include recesses and protrusions.
7. The imaging element according to claim 1 , further comprising:
the junction region in at least one of four corners of the first photoelectric conversion region.
8. The imaging element according to claim 1 , further comprising:
the pixel isolation section shaped like a cross; and
the junction region on a plurality of side surfaces of the pixel isolation section shaped like a cross.
9. The imaging element according to claim 1 , wherein the pixel isolation section partly includes a discontinuous portion, and
the first impurity region in the discontinued portion is formed in a curved shape.
10. The imaging element according to claim 9 , wherein a plurality of the discontinuous portions is provided on one side.
11. The imaging element according to claim 1 , wherein the first impurities are N-type impurities and the second impurities are P-type impurities, or the first impurities are P-type impurities and the second impurities are N-type impurities.
12. The imaging element according to claim 1 , wherein the pixel isolation section includes protruding portions, and
a tip of each of the protruding portions faces a gate of a transfer transistor.
13. The imaging element according to claim 1 , wherein the pixel isolation section includes protruding portions, and
each of the protruding portions is formed not to penetrate the substrate.
14. Electronic equipment, comprising:
an imaging element including:
a substrate;
a first photoelectric conversion region provided in the substrate;
a second photoelectric conversion region provided in the substrate, the second photoelectric conversion region being adjacent to the first photoelectric conversion region;
a pixel isolation section provided in the substrate and between the first photoelectric conversion region and the second photoelectric conversion region; and
a junction region provided in a side wall of the pixel isolation section, the junction region including a first impurity region including first impurities and a second impurity region including second impurities,
wherein a length of a side of the first impurity region formed in a side wall of the pixel isolation section, the side perpendicularly intersecting two parallel sides of four sides of the pixel isolation section enclosing the first photoelectric conversion region, is larger than a length between the two parallel sides of the pixel isolation section,
wherein the first impurity region includes protruding portions on the second impurity region side and,
wherein a horizontal portion of the protruding portions has a greater length than a vertical surface of the protruding portions furthest from the pixel isolation section in a plan view.
15. The electronic equipment according to claim 14 , wherein, when the length between the two parallel sides of the pixel isolation section is used as a reference, the length of the side of the first impurity region is at least 1.3 times as large as the length between the two parallel sides of the pixel isolation section.
16. The electronic equipment according to claim 14 , wherein the pixel isolation section includes protruding portions.
17. The electronic equipment according to claim 14 , wherein each of the protruding portions is formed in a rectangular shape.