System and method for preventing thermal induced failures in vertical cavity surface emitting laser (VCSEL) array
The present invention discloses a VCSEL array that is divided into at least a first and a second area. The first area covers the center of the array and is surrounded by the second area. The first area would experience higher temperature than the second area after the VCSELs in both areas are turned on for a given time period. VCSELs in the first area are electrically connected to a first metal layer portion. VCSELs in the second area are electrically connected to a second metal layer portion. The first and second metal layer portions are electrically insulated from each other.
1. A Vertical Cavity Surface Emitting Laser (VCSEL) array, comprising:
a substrate;
a plurality of VCSEL structures formed in an area on the substrate, each VCSEL structure comprising a first reflector region, an active region, and a second reflector region, each VCSEL structure emitting a laser beam when being powered on;
a first metal layer portion that electrically connects a plurality of VCSEL structures which is in a central part of the area, wherein the central part of the area would experience higher temperature than a surrounding part of the area after VCSEL structures in the central and surrounding parts of the area are powered on for a given time period, and the surrounding part of the area surrounds the central part of the area; and
a second metal layer portion that electrically connects a plurality of VCSEL structures which is in the surrounding part of the area, wherein at least one of pulse width, duty cycle, and cycle frequency is reduced for VCSEL structures in the central part of the area when the VCSEL array is in pulse mode operation according to predetermined arrangements.
2. The VCSEL array of claim 1 , wherein the plurality of VCSEL structures in the area is formed on the substrate in an irregular pattern.
3. The VCSEL array of claim 1 , wherein the plurality of VCSEL structures in the area is formed on the substrate in a regular pattern.
4. The VCSEL array of claim 1 further comprises a first and a second driver circuit, wherein the first driver circuit drives VCSEL structures in the central part of the area and is connected to the first metal layer portion, and the second driver circuit drives VCSEL structures in the surrounding part of the area and is connected to the second metal layer portion.
5. The VCSEL array of claim 4 , wherein VCSEL structures in the central part of the area are charged with adjusted electrical currents or powered off according to predetermined arrangements.
6. The VCSEL array of claim 1 , wherein the central part of the area has higher VCSEL density than the surrounding part of the area.
7. A Vertical Cavity Surface Emitting Laser (VCSEL) array, comprising:
a substrate;
a plurality of VCSEL structures formed in an area on the substrate, each VCSEL structure comprising a first reflector region, an active region, and a second reflector region, each VCSEL structure emitting a laser beam when being powered on;
a first metal layer portion that electrically connects a plurality of VCSEL structures which is in a first part of the area, the first part of the area surrounded by a second part of the area, and wherein the first part of the area would experience higher temperature than the second part of the area after VCSEL structures in the first and second parts of the area are powered on for a given time period; and
a second metal layer portion that electrically connects a plurality of VCSEL structures which is in the second part of the area, wherein the first part of the area has higher VCSEL density than the second part of the area.
8. The VCSEL array of claim 7 , wherein the first part of the area covers a center of the VCSEL array.
9. The VCSEL array of claim 7 , wherein the plurality of VCSEL structures in the area is formed on the substrate in an irregular pattern.
10. The VCSEL array of claim 7 further comprises a first and a second driver circuit, wherein the first driver circuit drives VCSEL structures in the first part of the area, and the second driver circuit drives VCSEL structures in the second part of the area.
11. The VCSEL array of claim 10 , wherein VCSEL structures in the first part of the area are charged with adjusted electrical currents or powered off according to predetermined arrangements.
12. The VCSEL array of claim 10 , wherein at least one of pulse width, duty cycle, and cycle frequency is reduced for VCSEL structures in the first part of the area when the VCSEL array is in pulse mode operation according to predetermined arrangements.
13. A Vertical Cavity Surface Emitting Laser (VCSEL) array, comprising:
a substrate;
a plurality of VCSEL structures formed in an area on the substrate, each VCSEL structure comprising a first reflector region, an active region, and a second reflector region, each VCSEL structure emitting a laser beam when being powered on;
a first metal layer portion that electrically connects a plurality of VCSEL structures which is in a predetermined first part of the area, the first part of the area having higher VCSEL density than a predetermined second part of the area, and wherein the first part of the area would experience higher temperature than the second part of the area after VCSEL structures in the first and second parts of the area are powered on for a given time period, and the second part of the area surrounds the first part of the area; and
a second metal layer portion that electrically connects a plurality of VCSEL structures which is in the second part of the area.
14. The VCSEL array of claim 13 , wherein the plurality of VCSEL structures in the area is formed on the substrate in an irregular pattern.
15. The VCSEL array of claim 13 , wherein the plurality of VCSEL structures in the area is formed on the substrate in a regular pattern.
16. The VCSEL array of claim 13 further comprises a first and a second driver circuit, wherein the first driver circuit drives VCSEL structures in the first part of the area, and the second driver circuit drives VCSEL structures in the second part of the area.
17. The VCSEL array of claim 16 , wherein VCSEL structures in the first part of the area are charged with reduced electrical currents or powered off according to predetermined arrangements.
18. VCSEL array of claim 16 , wherein at least one of pulse width, duty cycle, and cycle frequency is reduced for VCSEL structures in the first part of the area when the VCSEL array is in pulse mode operation according to predetermined arrangements.