Solid-state image sensor
A solid-state image sensor according to the present disclosure includes a first semiconductor substrate having a photoelectric conversion element and a second semiconductor substrate facing the first semiconductor substrate with an insulating film interposed therebetween, in which the second semiconductor substrate has an amplification transistor that amplifies an electrical signal output from the photoelectric conversion element on a first main surface (MSa), has a region having a resistance lower than a resistance of the second semiconductor substrate on a second main surface (MSb) opposite to the first main surface (MSa), and is grounded via the region.
1. A solid-state image sensor comprising:
a first semiconductor substrate having a photoelectric conversion element; and
a second semiconductor substrate facing the first semiconductor substrate with an insulating film interposed therebetween,
wherein the second semiconductor substrate has an amplification transistor that amplifies an electrical signal output from the photoelectric conversion element on a first main surface, has a region having a resistance lower than a resistance of the second semiconductor substrate on a second main surface opposite to the first main surface, and is grounded via the region,
wherein the second semiconductor substrate has a certain conductive type, and
wherein the region with a lower resistance includes a higher concentration of impurities than other regions of the second semiconductor substrate.
2. The solid-state image sensor according to claim 1 , further comprising
a contact extending from the region of the second semiconductor substrate to the first semiconductor substrate side.
3. The solid-state image sensor according to claim 1 , further comprising
a contact extending from the region of the second semiconductor substrate to an opposite side of the first semiconductor substrate.
4. The solid-state image sensor according to claim 1 , wherein
the second semiconductor substrate is arranged on the first semiconductor substrate with a side of the second main surface facing the first semiconductor substrate.
5. The solid-state image sensor according to claim 4 , further comprising
a contact that connects the region of the second semiconductor substrate and the first semiconductor substrate.
6. The solid-state image sensor according to claim 4 , wherein
the region of the second semiconductor substrate has an extended portion that extends toward an outside of the second semiconductor substrate in a direction along the second semiconductor substrate.
7. The solid-state image sensor according to claim 6 , further comprising
a contact that penetrates the extended portion and has one end connected to the first semiconductor substrate and has another end grounded.
8. The solid-state image sensor according to claim 6 , further comprising
a contact that has one end connected to a side surface of the extended portion and has another end grounded.
9. A solid-state image sensor comprising:
a first semiconductor substrate having a photoelectric conversion element; and
a second semiconductor substrate facing the first semiconductor substrate with an insulating film interposed therebetween,
wherein the second semiconductor substrate has an amplification transistor that amplifies an electrical signal output from the photoelectric conversion element on a first main surface, has a region having a resistance lower than a resistance of the second semiconductor substrate on a second main surface opposite to the first main surface, and is grounded via the region,
wherein the second semiconductor substrate is arranged on the first semiconductor substrate with a side of the second main surface facing the first semiconductor substrate,
wherein the region of the second semiconductor substrate has an extended portion that extends toward an outside of the second semiconductor substrate in a direction along the second semiconductor substrate,
wherein the extended portion has a third main surface that faces on a same side as the first main surface of the second semiconductor substrate, and
wherein the solid-state image sensor further comprises a contact having one end connected to the third main surface of the extended portion and having another end grounded.
10. The solid-state image sensor according to claim 9 , wherein
the second semiconductor substrate has a certain conductive type, and
the region with a lower resistance includes a higher concentration of impurities than other regions of the second semiconductor substrate.
11. A solid-state image sensor comprising:
a first semiconductor substrate having a photoelectric conversion element; and
a second semiconductor substrate facing the first semiconductor substrate with an insulating film interposed therebetween,
wherein the second semiconductor substrate includes:
a pixel transistor that processes an electrical signal output from the photoelectric conversion element on a first main surface; and
an electrode to which a predetermined voltage is applied, the electrode being provided at a position that is near a second main surface opposite to the first main surface and corresponds to a gate electrode of the pixel transistor, and
wherein a distance from the second main surface of the second semiconductor substrate to the electrode is ten nanometers or less.
12. The solid-state image sensor according to claim 11 , further comprising
a wiring that applies the predetermined voltage to the electrode.
13. The solid-state image sensor according to claim 11 , wherein
the electrode is a back gate electrode that applies a back bias to the pixel transistor by the predetermined voltage being applied.
14. The solid-state image sensor according to claim 11 , wherein
the pixel transistor includes:
an amplification transistor that amplifies an electrical signal output from the photoelectric conversion element;
a selection transistor that controls transmission of the electrical signal amplified by the amplification transistor; and
a reset transistor that resets a gate potential of the amplification transistor to a power supply potential, and
the electrode includes:
a first electrode arranged at a position corresponding to a gate electrode of the amplification transistor;
a second electrode arranged at a position corresponding to a gate electrode of the selection transistor; and
a third electrode arranged at a position corresponding to a gate electrode of the reset transistor.
15. The solid-state image sensor according to claim 14 , wherein
the first electrode, by the predetermined voltage different from a threshold voltage of the amplification transistor being applied, applies a back bias to the amplification transistor to control the threshold voltage of the amplification transistor,
the second electrode, by the predetermined voltage different from a threshold voltage of the selection transistor being applied, applies a back bias to the selection transistor to control the threshold voltage of the selection transistor, and
the third electrode, by the predetermined voltage different from a threshold voltage of the reset transistor being applied, applies a back bias to the reset transistor to control the threshold voltage of the reset transistor.
16. The solid-state image sensor according to claim 15 , wherein
the first to third electrodes apply back biases of different values to the amplification transistor, the selection transistor, and the reset transistor, respectively, to individually control the respective threshold voltages of the amplification transistor, the selection transistor, and the reset transistor.
17. The solid-state image sensor according to claim 11 , wherein
the pixel transistor is a selection transistor.
18. The solid-state image sensor according to claim 17 , wherein
the electrode applies a back bias to the selection transistor to make on-resistance of the selection transistor different.
19. The solid-state image sensor according to claim 11 , wherein
a distance between the first main surface and the second main surface of the second semiconductor substrate is one hundred nanometers or less.