Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

1. A method of manufacturing a molybdenum-containing thin film, the method comprising:

using a molybdenum(0)-based hydrocarbon compound as a precursor for depositing a thin film, wherein the molybdenum (0)-based hydrocarbon compound is represented by the following Formula 1, 2, or 3:

wherein R 1 to R 6 are each independently hydrogen or C1-C7alkyl,

wherein R 1 and R 2 are each independently hydrogen or C1-C7alkyl, and

using iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof as a reaction gas to manufacture the molybdenum-containing thin film.

2. The method of claim 1 , wherein the method is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

3. The method of claim 1 , wherein the method includes:

a) maintaining a temperature of a substrate mounted in a chamber at 80 to 500° C.;

b) injecting a carrier gas and the molybdenum(0)-based hydrocarbon compound; and

c) injecting a reaction gas which is iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof to manufacture the molybdenum-containing thin film on the substrate.

4. The method of claim 3 , further comprising, after c), performing heat treatment.

5. The method of claim 4 , wherein the heat treatment is performed at 200 to 700° C.

6. The method of claim 3 , wherein the carrier gas is any one or two or more selected from a group consisting of nitrogen, hydrogen, argon, and helium.

7. The method of claim 1 , wherein the reaction gas is used at 0.1 to 200 mol, based on 1 mol of the molybdenum(0)-based hydrocarbon compound.

8. The method of claim 1 , wherein the reaction gas is I 2 , CH 3 I, CH 2 I 2 , CHI 3 , CH 3 CH 2 I, CH 3 CHI 2 , ICH 2 CH 2 I, CH 3 CH 2 CH 2 I, CH 3 CHICH 3 , ICH 2 CH 2 CH 2 I, or SiH 2 I 2 .

9. A composition for depositing a molybdenum-containing thin film, the composition comprising:

a molybdenum(0)-based hydrocarbon compound as a precursor represented by the following Formula 1, 2, or 3,

wherein R 1 to R 6 are each independently hydrogen or C1-C7alkyl,

wherein R 1 and R 2 are each independently hydrogen or C1-C7alkyl; and

iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof as reaction gas.

10. The composition of claim 9 , wherein the reaction gas is used at 0.1 to 200 mol, based on 1 mol of the molybdenum(0)-based hydrocarbon compound.

11. The composition of claim 9 , wherein the reaction gas is I 2 , CH 3 I, CH 2 I 2 , CHI 3 , CH 3 CH 2 I, CH 3 CHI 2 , ICH 2 CH 2 I, CH 3 CH 2 CH 2 I, CH 3 CHICH 3 , ICH 2 CH 2 CH 2 I, or SiH 2 I 2 .

12. A molybdenum-containing thin film, manufactured using the composition for depositing a molybdenum-containing thin film of claim 9 , having a specific resistance of 200 μΩ·cm or less and having an oxygen content of 10% or less.

13. The molybdenum-containing thin film of claim 12 , wherein the molybdenum-containing thin film has a carbon content of 30% or less.