Process liquid for extreme ultraviolet lithography and pattern forming method using same
Proposed are a processing solution for reducing the incidence of pattern collapse and the number of defects in a photoresist pattern including polyhydroxystyrene using extreme ultraviolet rays as an exposure source, and a method of forming a pattern using the same. The processing solution for reducing the incidence of photoresist pattern collapse and the number of defects includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of an anionic surfactant, and 98 to 99.9998 wt % of water.
1. A processing solution for reducing incidence of pattern collapse and a number of defects in a photoresist pattern comprising polyhydroxystyrene during photoresist patterning using extreme ultraviolet rays as a light source, the processing solution consisting of:
0.001 to 0.1 wt % of an anionic surfactant selected from the group consisting of a polycarboxylic acid salt, a sulfonic acid salt, a sulfuric acid ester salt, and mixtures thereof;
0.001 to 0.1 wt % of an alkaline material selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof; and
99.8 to 99.998 wt % of water.
2. The processing solution of claim 1 , wherein the anionic surfactant is a polycarboxylic acid salt.
3. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing the photoresist film to extreme ultraviolet rays and then performing development; and
(c) cleaning the photoresist pattern with the processing solution of claim 2 .
4. The processing solution of claim 1 , wherein the anionic surfactant is a sulfonic acid salt.
5. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing the photoresist film to extreme ultraviolet rays and then performing development; and
(c) cleaning the photoresist pattern with the processing solution of claim 4 .
6. The processing solution of claim 1 , wherein the anionic surfactant is a sulfuric acid ester salt.
7. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing the photoresist film to extreme ultraviolet rays and then performing development; and
(c) cleaning the photoresist pattern with the processing solution of claim 6 .
8. The processing solution of claim 1 , wherein the alkaline material is selected from the group consisting of tetraethylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof.
9. The processing solution of claim 8 , wherein the alkaline material is tetraethylammonium hydroxide.
10. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing the photoresist film to extreme ultraviolet rays and then performing development; and
(c) cleaning the photoresist pattern with the processing solution of claim 9 .
11. The processing solution of claim 8 , wherein the alkaline material is tetrabutylammonium hydroxide.
12. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing the photoresist film to extreme ultraviolet rays and then performing development; and
(c) cleaning the photoresist pattern with the processing solution of claim 11 .
13. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing the photoresist film to extreme ultraviolet rays and then performing development; and
(c) cleaning the photoresist pattern with the processing solution of claim 8 .
14. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing the photoresist film to extreme ultraviolet rays and then performing development; and
(c) cleaning the photoresist pattern with the processing solution of claim 1 .