IP Library Granted Patent US 11,919,781
Granted Patent B2
US 11,919,781 · App. 17/300,772 · Granted Mar 5, 2024

Preparation of metal chalcogenides

Inventors: Viktor Balema (Muskego, WI); Ihor Hlova (Ames, IA); Vitalij K. Pecharsky (Ames, IA)
Assignee: Iowa State University Research Foundation, Inc.
C01G39/06B02C15/004B02C19/06C01B19/002C01G41/00C01G41/006C01P2002/01C01P2002/72C01P2002/85C01P2002/88C01P2004/03C01P2004/04C01P2004/20C01P2004/30
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Quick Facts
Patent No.
US 11,919,781
App. No.
17/300,772
Granted
Mar 5, 2024
Kind
B2
Abstract

A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.

Claims (12)

1. A transition metal chalcogenide material having an as-ball milled hetero-layered structure having layers of different composition exfoliated from different starting transition metal chalcogenides by ball milling the different starting transition metal chalcogenides together wherein individual layers of the as-ball milled hetero-layered structure are chemically un-modified relative to the different starting transition metal chalcogenides.

2. The material of claim 1 that has been converted to comprise a substantially homogeneous solid solution of two or more different transition metal chalcogenides.

3. The material of claim 1 wherein respective layers have at least one of a different transition metal constituent and a chalcogen constituent from the next adjacent layer.

4. The material of claim 1 where the hetero-layered structure comprises transition metal dichalcogenide layers with different transition metal constituents.

5. The material of claim 1 wherein the hetero-layered structure comprises transition metal trichalcogenide layers having different transition metal constituents.

6. The material of claim 1 wherein the hetero-layered structure comprises transition metal dichalcogenide layers having different chalcogen constituents.

7. The material of claim 1 wherein the hetero-layered structure comprises transition metal trichalcogenide layers having different chalcogen constituents.

8. The material of claim 1 wherein each of the layers includes a transition metal that is selected from the group consisting of Ti, Zr, Hf, Nb, Ta, Mo, W, Re, Pd, Pt, In, Ga and Sn.

9. The material of claim 1 which includes at least one of graphite, black phosphorus, and boron nitride.

10. The material of claim 2 which has been heated to convert the structure to a single-phase structure.

11. The material of claim 1 wherein the layers of the as-ball milled hetero-layered structure are self-assembled by the ball milling.

12. The material of claim 8 having a chemical composition represented by (M a M 2 b M 3 c . . . n )(X d X 2 e X 3 f ), where the formula unit includes two or more different transition metals (M), and X, X 2 and X 3 represent S, Se, or Te, whereby the sum of a+b+c+. . . n is between 1 and 3 and the sum of d+e+f is between 1 and 6.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2023
From: BALEMA, VIKTOR; HLOVA, IHOR; PECHARSKY, VITALIJ K
To: IOWA STATE UNIVERSITY RESEARCH FOUNDATION, INC.
Reel/Frame 064867/0464 →
CONFIRMATORY LICENSE Recorded Feb 22, 2022
From: IOWA STATE UNIVERSITY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 059216/0872 →
Continuity (3)
Division 15998266 · Jul 26, 2018
Provisional Application 62605102 · Aug 1, 2017
Related Publication 20220106197A1 · Apr 7, 2022