Semiconductor structure with stacked vias having dome-shaped tips
A semiconductor structure may include a metal line, a via above and in electrical contact with the metal lines, and a dielectric layer positioned along a top surface of the metal lines. A top surface of the dielectric layer may be below the dome shaped tip of the via. A top portion of the via may include a dome shaped tip. The semiconductor structure may include a liner positioned along the top surface of the dielectric layer and a top surface of the dome shaped tip of the via. The liner may be made of tantalum nitride or titanium nitride. The dielectric layer may be made of a low-k material. The metal line and the via may be made of ruthenium. The metal line may be made of molybdenum.
1. A semiconductor structure comprising:
a first metal line;
a first via above and in electrical contact with the first metal line, wherein a top portion of the first via includes a first dome shaped tip;
a first dielectric layer positioned along a top surface of the first metal line, wherein a top surface of the first dielectric layer is below the first dome shaped tip of the first via;
a first liner positioned along the top surface of the first dielectric layer and a top surface of the first dome shaped tip of the first via; and
a second via above and in electrical contact with a second metal line, wherein a top portion of the second via includes a second dome shaped tip,
wherein the second metal line is on top of and in direct contact with the first liner; wherein the first dome shaped tip of the first via has an enlarged width that is wider than a bottom of the first dome shaped tip; and wherein a bottom of the first via is wider than the bottom of the first dome shaped tip.
2. The semiconductor structure of claim 1 , further comprising:
a second dielectric layer positioned along a top surface of the second metal line, wherein a top surface of the second dielectric layer is below the second dome shaped tip of the second via; and
a second liner positioned along the top surface of the second dielectric layer and a top surface of the second dome shaped tip of the second via.
3. The semiconductor structure of claim 2 , wherein the first and second dielectric layers are made of a low-k material.
4. The semiconductor structure of claim 1 , wherein the first and second metal lines and the first and second vias are made of ruthenium.
5. The semiconductor structure of claim 1 , wherein the first and second metal lines and the first and second vias are made of molybdenum.