Determination method and treatment method
According to one embodiment, a determination method is provided. The determination method determines progress of a treatment of a side-product produced in a process of reacting a substance containing a halogen and silicon or reacting a substance containing silicon and a substance containing a halogen. The treatment of the side-product includes bringing the side-product into contact with a treatment fluid containing water to obtain a first solid matter. The determination method includes determining the progress of the treatment of the side-product based on a signal according to a chemical analysis of at least one of an Si-α bond (α is at least one selected from the group consisting of F, Cl, Br, and I) and an Si—H bond, of the first solid matter.
1. A method for decomposition of a hazardous side-product produced in an apparatus by a process of reacting a substance containing a halogen and silicon or reacting a substance containing silicon and a substance containing a halogen, comprising:
treating the side product by contacting the side-product with a treatment fluid containing water to obtain a solid matter;
determining if the side product is hazardous by performing a chemical analysis comprising an infrared spectroscopic analysis of the solid matter to obtain values I1, I2 and (I1−I2);
comparing the obtained values to threshold values (I1−I2) and I2;
continuing the treatment when the obtained values (I1−I2) and I2 are greater than the threshold values and repeating the analysis of the solid matter; or
ending the treatment when the obtained values (I1−I2) and I2 are equal to the threshold values or less which indicates the side product is decomposed and no longer hazardous, and
removing the decomposed side product from the apparatus,
wherein
the infrared spectroscopic analysis relates to
an Si-α bond wherein α is at least one selected from the group consisting of F, Cl, Br, and I, of the first solid matter;
wherein I1 is an absorbance of a local maximum value in a range of a wavenumber 800 cm −1 or more and 900 cm −1 or less, and I2 is an absorbance of a local minimum value in a range of a wavenumber of 900 cm −1 or more and 1000 cm −1 or less and located at a higher wavenumber side than the local maximum value, in an infrared spectrum of the first solid matter,
the threshold value of I2 is 0.130, and
the threshold value of (I1−I2) is 0.001.
2. The method according to claim 1 , wherein the treatment fluid is a basic aqueous solution.
3. The method according to claim 2 , further comprising adding more of the treatment fluid to a mixture of the first solid matter and the treatment fluid when the value (I1−I2) is more than 0.001 and the absorption I2 of the local minimum value is 0.130 or less, or adding more of the treatment fluid to the mixture when the value (I1−I2) is more than 0.001 and the absorbance I2 of the local minimum value is more than 0.130.
4. The method according to claim 1 , further comprising adding more of the treatment fluid to the mixture of the first solid matter and the treatment fluid when the value (I1−I2) is more than 0.001 and the absorption I2 of the local minimum value is 0.130 or less, or adding more of the treatment fluid to the mixture when the value (I1−I2) is more than 0.001 and the absorbance I2 of the local minimum value is more than 0.130.
5. The method according to claim 1 , wherein the absorbance I1 is derived from an Si—Cl bond.
6. A method for decomposition of a hazardous side-product produced in an apparatus by a process of reacting a substance containing a halogen and silicon or reacting a substance containing silicon and a substance containing a halogen, comprising:
bringing the side-product into contact with a treatment fluid containing water to obtain a solid matter;
determining if the side product is hazardous by performing a chemical analysis comprising a Raman spectroscopic analysis of the solid matter to obtain a ratio R1/R2;
comparing the obtained ratio R1/R2 to a threshold ratio R1/R2;
continuing the treatment when the obtained ratio R1/R2 is greater than the threshold value and repeating the analysis of the solid matter; or
ending the treatment when the obtained ratio R1/R2 is equal to the threshold value or less which indicates the side product is decomposed and no longer hazardous, and
removing the decomposed side product from the apparatus,
wherein
the Raman spectroscopic analysis relates to
an Si-α bond wherein a is at least one selected from the group consisting of F, Cl, Br, and I and an Si—H bond, of the first solid matter,
R1 is an intensity of a first local maximum value in a range of a Raman shift of 2000 cm −1 or more and 2500 cm −1 or less,
R2 is an intensity of a second local maximum value in a range of a Raman shift of 2700 cm −1 or more and 3500 cm 31 1 or less, in a Raman spectrum of the first solid matter, and
the threshold value of the ratio R1/R2 is 1/5.
7. The method according to claim 6 , wherein the treatment fluid is a basic aqueous solution.
8. The method according to claim 7 , further comprising adding more of the treatment fluid to a mixture of the first solid matter and the treatment fluid when the ratio R1/R2 is greater than 1/5.
9. The method according to claim 7 , wherein the intensity R1 is derived from the Si—H bond, and the intensity R2 is derived from a hydroxyl group or a methyl group.
10. The method according to claim 6 , further comprising further adding more of the treatment fluid to a mixture of the first solid matter and the treatment fluid when the ratio R1/R2 is greater than 1/5.
11. The method according to claim 6 , wherein the intensity R1 is derived from the Si—H bond, and the intensity R2 is derived from a hydroxyl group or a methyl group.