Memory device, memory system, and method of operating the same
A memory device, a memory system, and a method of operating the same. The memory device includes a memory cell array including a plurality of memory cells and a write command determination unit (WCDU) that determines whether a write command input to the memory device is (to be) accompanied a masking signal. The WCDU produces a first control signal if the input write command is (to be) accompanied by a masking signal. A data masking unit combines a portion of read data read from the memory cell array with a corresponding portion of input write data corresponding to the write command and generates modulation data in response to the first control signal. An error correction code (ECC) engine generates parity of the modulation data.
1. A synchronous dynamic random access memory (SDRAM) device comprising:
a memory cell array including a plurality of memory cells;
a clock pin receiving a clock signal;
a plurality of data pins receiving write data;
a plurality of command/address pins receiving command/address signals comprising a write command and a write address, wherein the write address indicates a location of the memory cell array for the write data to be written into;
a data masking pin receiving a data masking signal, wherein the data masking signal indicates a first portion of the write data to be masked;
a write command determination circuit configured to determine whether the write command is a normal write command or a read modify write command, wherein the data masking signal is provided along with the write data for masking the first portion of the write data when the write command is determined to be the read modify write command;
a data modulation circuit configured to generate modulation data by replacing the first portion of the write data with a corresponding portion of read data based on the masking signal, wherein the read data is read from the memory cell array based on the write address in response to the read modify write command; and
an error correction code (ECC) engine configured to generate a first parity data with respect to the modulation data and store the modulation data and the first parity data in the memory cell array.
2. The SDRAM device of claim 1 , wherein the first portion data of the write data to be masked has a byte data size.
3. The SDRAM device of claim 1 , wherein the data masking signal is not received along with the write data when the write command is determined to be the normal write command, and the write data is stored in the memory cell array.
4. The SDRAM device of claim 3 , wherein the ECC engine is further configured to generate a second parity data with respect to the write data and store the write data and the second parity data in the memory cell array.
5. The SDRAM device of claim 1 , wherein a size of the modulation data is equal to a size of the write data.
6. The SDRAM device of claim 1 , wherein each of the plurality of data pins is configured to allow 16*n bits of burst data, where n=1 or 2, to be inputted or outputted therethrough.
7. A synchronous dynamic random access memory (SDRAM) device comprising:
a memory cell array including a plurality of memory cells;
a clock pin receiving a clock signal;
a plurality of data pins receiving write data;
a plurality of command/address pins receiving command/address signals comprising a write command and a write address, wherein the write address indicates a location of the memory cell array for the write data to be written into;
a data masking pin receiving a data masking signal, wherein the data masking signal indicates a first portion of the write data to be masked;
a write command determination circuit configured to determine whether the write command is a normal write command or a read modify write command, wherein the data masking signal is provided along with the write data for masking the first portion of the write data when the write command is determined to be the read modify write command;
a data modulation circuit configured to generate modulation data by replacing the first portion of the write data with a corresponding portion of corrected read data based on the data masking signal, wherein the corrected read data is generated by correcting data read from the memory cell array based on the write address in response to the read modify write command; and
an error correction code (ECC) engine configured to generate a first parity data with respect to the modulation data and store the modulation data and the first parity data in the memory cell array.
8. The SDRAM device of claim 7 , wherein the first portion data of the write data to be masked has a byte data size.
9. The SDRAM device of claim 7 , wherein the data masking signal is not received along with the write data when the write command is determined to be the normal write command, and the write data is stored in the memory cell array.
10. The SDRAM device of claim 9 , wherein the ECC engine is further configured to generate a second parity data with respect to the write data and store the write data and the second parity data in the memory cell array.
11. The SDRAM device of claim 7 , wherein a size of the modulation data is equal to a size of the write data.
12. The SDRAM device of claim 7 , wherein each of the plurality of data pins is configured to allow 16*n bits of burst data, where n=1 or 2, to be inputted or outputted therethrough.
13. A synchronous dynamic random access memory (SDRAM) device comprising:
a memory cell array including a plurality of memory cells;
a clock pin receiving a clock signal;
a plurality of data pins receiving write data;
a plurality of command/address pins receiving command/address signals comprising a write command and a write address, wherein the write address indicates a location of the memory cell array for the write data to be written into;
a write command determination circuit configured to determine whether the write command is a normal write command or a read modify write command, wherein a data masking signal is provided for masking a first portion of the write data when the write command is determined to be the read modify write command;
a data modulation circuit configured to generate modulation data by replacing the first portion of the write data with a corresponding portion of corrected read data based on the data masking signal, wherein the corrected read data is generated by correcting data read from the memory cell array based on the write address in response to the read modify write command; and
an error correction code (ECC) engine configured to generate a first parity data with respect to the modulation data and store the modulation data and the first parity data in the memory cell array.
14. The SDRAM device of claim 13 , wherein the first portion data of the write data to be masked has a byte data size.
15. The SDRAM device of claim 13 , wherein the first portion data of the write data to be masked has a bit data size.
16. The SDRAM device of claim 13 , wherein the data masking signal is not received along with the write data when the write command is determined to be the normal write command, and the write data is stored in the memory cell array.
17. The SDRAM device of claim 16 , wherein the ECC engine is further configured to generate a second parity data with respect to the write data and store the write data and the second parity data in the memory cell array.
18. The SDRAM device of claim 13 , wherein a size of the modulation data is equal to a size of the write data.
19. The SDRAM device of claim 13 , wherein the data masking signal is associated with the write command.
20. The SDRAM device of claim 13 , wherein each of the plurality of data pins is configured to allow 16*n bits of burst data, where n=1 or 2, to be inputted or outputted therethrough.