Semiconductor device and method of forming a slot in EMI shielding layer using a plurality of slot lines to guide a laser
A semiconductor device has a shielding layer over a semiconductor package. A plurality of slot lines define a location to form a slot in the shielding layer. The slot is formed in the shielding layer by cutting along the slot lines with a laser controlled by a scanner to read the slot lines. The slot lines include a left boundary slot line and right boundary slot line. The slot can be cut in the shielding layer by performing an edge cut along the slot lines, and performing a peel back to form the slot in the shielding layer. Alternatively, the slot can be cut in the shielding layer by performing a first cut in a first direction along the slot lines, and performing a second cut in a second direction opposite the first direction along the slot lines to form the slot in the shielding layer.
1. A method of forming a semiconductor device, comprising:
providing a semiconductor package;
forming a shielding layer over the semiconductor package;
providing a plurality of slot lines on the shielding layer defining a location to form a slot in the shielding layer; and
forming the slot in the shielding layer by cutting at the location along the plurality of slot lines.
2. The method of claim 1 , further including providing a laser to cut along the plurality of slot lines.
3. The method of claim 2 , further including providing a scanner to read the plurality of slot lines and control the laser to cut along the plurality of slot lines.
4. The method of claim 1 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.
5. The method of claim 1 , wherein forming the slot in the shielding layer includes:
performing an edge cut along the plurality of slot lines; and
performing a peel back along a center slot line to form the slot in the shielding layer.
6. The method of claim 1 , wherein forming the slot in the shielding layer includes:
performing a first cut in a first direction along the plurality of slot lines; and
performing a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.
7. A method of forming a semiconductor device, comprising:
forming a shielding layer over the semiconductor device;
providing a plurality of slot lines on the shielding layer; and
forming a slot in the shielding layer by cutting at the location along the plurality of slot lines.
8. The method of claim 7 , further including providing a laser to cut along the plurality of slot lines.
9. The method of claim 8 , further including providing a scanner to read the plurality of slot lines and control the laser to cut along the plurality of slot lines.
10. The method of claim 7 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.
11. The method of claim 7 , wherein forming the slot in the shielding layer includes:
performing an edge cut along the plurality of slot lines; and
performing a peel back along a center slot line to form the slot in the shielding layer.
12. The method of claim 7 , wherein forming the slot in the shielding layer includes:
performing a first cut in a first direction along the plurality of slot lines; and
performing a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.
13. The method of claim 7 , wherein forming the slot in the shielding layer includes a corner edge and vertical sidewalls.
14. A semiconductor device, comprising:
a semiconductor package; and
a shielding layer formed over the semiconductor package with a plurality of slot lines on the shielding layer defining a location to form a slot in the shielding layer at the location along the plurality of slot lines.
15. The semiconductor device of claim 14 , further including a laser to form the slot along the plurality of slot lines.
16. The semiconductor device of claim 15 , further including a scanner to read the plurality of slot lines and control the laser to form the slot along the plurality of slot lines.
17. The semiconductor device of claim 14 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.
18. The semiconductor device of claim 14 , wherein the slot in the shielding layer includes:
an edge cut along the plurality of slot lines; and
a peel back along a center slot line to form the slot in the shielding layer.
19. The semiconductor device of claim 14 , wherein the slot in the shielding layer includes:
a first cut in a first direction along the plurality of slot lines; and
a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.
20. A semiconductor device, comprising:
a shielding layer formed over the semiconductor device; and
a plurality of slot lines on the shielding layer defining a location for a slot formed in the shielding layer along the plurality of slot lines.
21. The semiconductor device of claim 20 , further including a laser to form the slot along the plurality of slot lines.
22. The semiconductor device of claim 21 , further including a scanner to read the plurality of slot lines and control the laser to form the slot along the plurality of slot lines.
23. The semiconductor device of claim 20 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.
24. The semiconductor device of claim 20 , wherein the slot in the shielding layer includes:
an edge cut along the plurality of slot lines; and
a peel back along a center slot line to form the slot in the shielding layer.
25. The semiconductor device of claim 20 , wherein the slot in the shielding layer includes:
a first cut in a first direction along the plurality of slot lines; and
a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.
26. A semiconductor device, comprising:
a semiconductor package; and
a shielding layer formed over the semiconductor package with a plurality of slot lines on the shielding layer defining a location to form a slot in the shielding layer at the location defined by the plurality of slot lines.
27. The semiconductor device of claim 26 , further including a laser to form the slot along the plurality of slot lines.
28. The semiconductor device of claim 27 , further including a scanner to read the plurality of slot lines and control the laser to form the slot along the plurality of slot lines.
29. The semiconductor device of claim 26 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.
30. The semiconductor device of claim 26 , wherein the slot in the shielding layer includes:
an edge cut along the plurality of slot lines; and
a peel back along a center slot line to form the slot in the shielding layer.
31. The semiconductor device of claim 26 , wherein the slot in the shielding layer includes:
a first cut in a first direction along the plurality of slot lines; and
a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.