Image sensor and electronic apparatus
The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.
1. A light detecting device, comprising:
a photoelectric conversion portion disposed above a semiconductor substrate;
a photodiode disposed in the semiconductor substrate;
a color filter disposed below the photoelectric conversion portion and disposed above the semiconductor substrate;
an on-chip lens corresponding to the photoelectric conversion portion and the photodiode,
wherein, in a plan view, a center of the photoelectric conversion portion is deviated from a center of the on-chip lens; and
a light shield,
wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.
2. The light detecting device according to claim 1 , wherein the light detecting device is configured to detect a phase difference based on an output of the photoelectric conversion portion.
3. The light detecting device according to claim 1 , wherein the photoelectric conversion portion and the photodiode are configured to photoelectrically convert light of different wavelengths.
4. The light detecting device according to claim 1 , wherein the light shield comprises a metal.
5. The light detecting device according to claim 1 , wherein the photodiode is configured to receive light which passes through the color filter.
6. A light detecting apparatus, comprising:
a lens; and
a light detecting device, comprising:
a photoelectric conversion portion disposed above a semiconductor substrate;
a photodiode disposed in the semiconductor substrate;
a color filter disposed below the photoelectric conversion portion and disposed above the semiconductor substrate;
an on-chip lens corresponding to the photoelectric conversion portion and the photodiode,
wherein, in a plan view, a center of the photoelectric conversion portion is deviated from a center of the on-chip lens; and
a light shield,
wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.
7. A light detecting device, comprising:
a first photoelectric conversion portion disposed above a semiconductor substrate;
a second photoelectric conversion portion disposed above the semiconductor substrate;
a color filter disposed above the semiconductor substrate and disposed below at least one of the first photoelectric conversion portion and the second photoelectric conversion portion,
wherein the light detecting device is configured to detect a phase difference from a first output of the first photoelectric conversion portion and a second output of the second photoelectric conversion portion; and
a light shield,
wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.
8. The light detecting device according to claim 7 , further comprising a photodiode disposed in the semiconductor substrate.
9. The light detecting device according to claim 8 , wherein the photodiode is configured to receive light which passes through the color filter.
10. The light detecting device according to claim 8 , wherein the photodiode is configured to photoelectrically convert light of different wavelengths from at least one of the first photoelectric conversion portion and the second photoelectric conversion portion.
11. The light detecting device according to claim 7 , wherein the light shield comprises a metal.
12. The light detecting device according to claim 7 , further comprising:
a first on-chip lens corresponding to the first photoelectric conversion portion; and
a second on-chip lens corresponding to the second photoelectric conversion portion.
13. The light detecting device according to claim 7 , wherein the first photoelectric conversion portion and the second photoelectric conversion portion are configured to photoelectrically convert light with a same wavelength.
14. The light detecting device according to claim 13 , wherein the light is green light.
15. The light detecting device according to claim 13 , wherein the light is blue light.
16. The light detecting device according to claim 13 , wherein the light is red light.
17. The light detecting device according to claim 13 , wherein the light is white light.
18. The light detecting device according to claim 13 , wherein the light is infrared light.
19. The light detecting device according to claim 13 , wherein the light is ultraviolet light.
20. A light detecting apparatus, comprising:
a lens; and
a light detecting device, comprising:
a first photoelectric conversion portion disposed above a semiconductor substrate;
a second photoelectric conversion portion disposed above the semiconductor substrate;
a color filter disposed above the semiconductor substrate and disposed below at least one of the first photoelectric conversion portion and the second photoelectric conversion portion,
wherein the light detecting device is configured to detect a phase difference from a first output of the first photoelectric conversion portion and a second output of the second photoelectric conversion portion; and
a light shield,
wherein at least a part of the light shield is disposed at a same level as the color filter in a cross-sectional view.