Solid-state image pickup device and electronic apparatus having a wall between the first pixel and the second pixel
The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.
1. A light detecting device, comprising:
a first photoelectric conversion region disposed in a substrate wherein the substrate comprises a first surface and a second surface opposite the first surface, the first surface being a light incident surface of the substrate;
a second photoelectric conversion region disposed in the substrate and adjacent to the first photoelectric conversion region;
a first on-chip lens disposed above the first surface of the substrate, the first on-chip lens corresponding to the first photoelectric conversion region; and
a second on-chip lens disposed above the first surface of the substrate and disposed adjacent to the first on-chip lens, the second on-chip lens corresponding to the second photoelectric conversion region,
wherein the first photoelectric conversion region and the first on-chip lens are a part of a first pixel and the second photoelectric conversion region and the second on-chip lens are a part of a second pixel,
the light detection device further comprising:
a first wall disposed between the first pixel and the second pixel, wherein a part of the first wall is disposed at the first surface of the substrate;
a second wall disposed between the first pixel and the second pixel, wherein a part of the second wall is disposed at the second surface of the substrate; and
a first semiconductor region disposed in the substrate, wherein, in a cross-sectional view, the first semiconductor region is disposed between a first portion of the second wall and a second portion of the second wall.
2. The light detecting device according to claim 1 , wherein the first wall overlaps the first semiconductor region in a plan view.
3. The light detecting device according to claim 1 , wherein the first semiconductor region is one of a source and a drain of an amplification transistor.
4. The light detecting device according to claim 1 , wherein the first semiconductor region is one of a source and a drain of a selection transistor.
5. The light detecting device according to claim 1 , wherein the first semiconductor region is one of a source and a drain of a reset transistor.
6. The light detecting device according to claim 1 , wherein the first semiconductor region is coupled to VSS.
7. The light detecting device according to claim 6 , wherein the VSS is a ground level.
8. The light detecting device according to claim 1 , wherein the first wall is not contact with the second wall.
9. The light detecting device according to claim 1 , wherein a first length of the first wall in a depth direction of the substrate is different than a second length of the second wall in the depth direction of the substrate.
10. The light detecting device according to claim 9 , wherein the first length is greater than the second length.
11. The light detecting device according to claim 1 , further comprising a wiring layer, wherein the wiring layer is provided on the second surface of the substrate.
12. The light detecting device according to claim 1 ,
wherein the first pixel further comprises a third photoelectric conversion region disposed in the substrate and disposed adjacent to the first photoelectric conversion region, the first on-chip lens further corresponding to the third photoelectric conversion region, and
wherein the second pixel further comprises a fourth photoelectric conversion region disposed in the substrate and disposed adjacent to the second photoelectric conversion region, the second on-chip lens further corresponding to the fourth photoelectric conversion region.
13. The light detecting device according to claim 12 ,
wherein the first pixel further comprises a first color filter disposed between the first on-chip lens and the substrate,
wherein the second pixel further comprises a second color filter disposed between the second on-chip lens and the substrate, and
wherein the first color filter and the second color filter are configured to pass light of a color different than each other.
14. The light detecting device according to claim 12 ,
wherein the first and third photoelectric conversion regions are configured to receive light of a first color, and
wherein the second and fourth photoelectric conversion regions are configured to receive light of a second color different than the first color.
15. The light detecting device according to claim 12 , wherein each of the first pixel and the second pixel is configured to detect a phase difference.
16. An electronic apparatus, comprising:
a lens;
a digital signal processing circuitry; and
a light detecting device, comprising:
a first photoelectric conversion region disposed in a substrate wherein the substrate comprises a first surface and a second surface opposite the first surface, the first surface being a light incident surface of the substrate;
a second photoelectric conversion region disposed in the substrate and adjacent to the first photoelectric conversion region;
a first on-chip lens disposed above the first surface of the substrate, the first on-chip lens corresponding to the first photoelectric conversion region; and
a second on-chip lens disposed above the first surface of the substrate and disposed adjacent to the first on-chip lens, the second on-chip lens corresponding to the second photoelectric conversion region,
wherein the first photoelectric conversion region and the first on-chip lens are a part of a first pixel and the second photoelectric conversion region and the second on-chip lens are a part of a second pixel,
the light detection device further comprising:
a first wall disposed between the first pixel and the second pixel, wherein a part of the first wall is disposed at the first surface of the substrate;
a second wall disposed between the first pixel and the second pixel, wherein a part of the second wall is disposed at the second surface of the substrate; and
a first semiconductor region disposed in the substrate, wherein, in a cross-sectional view, the first semiconductor region is disposed between a first portion of the second wall and a second portion of the second wall.