Capacitor and semiconductor device including the same
Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.
1. A capacitor comprising:
a first electrode;
a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric films having different conductances from each other; and
a second electrode on the plurality of dielectric films,
wherein the plurality of dielectric films are configured such that
the capacitor has a first capacitance,
a capacitance across a dielectric film having the smallest conductance, among the plurality of dielectric films, is a second capacitance,
the smallest conductance is less than or equal to a tenth ( 1/10) a conductance of each of a remainder of the plurality of dielectric films, and
a difference in capacitance between the first capacitance and the second capacitance is less than a difference in capacitance between the first capacitance and a capacitance of each of the remainder of the plurality of dielectric films.
2. The capacitor of claim 1 , wherein a dielectric constant of the dielectric film having the smallest conductance is greater than a dielectric constant of at least one of the remainder of the plurality of dielectric films.
3. The capacitor of claim 1 , wherein a dielectric constant of the dielectric film having the smallest conductance among the plurality of dielectric films is 30 or more.
4. The capacitor of claim 1 , wherein the dielectric film having the smallest conductance includes at least one of a perovskite structure, a ferroelectric material, a paraelectric material, or an antiferroelectric material.
5. The capacitor of claim 1 , wherein the capacitance of the capacitor is 10% or greater than the second capacitance across the dielectric film having the smallest conductance among the plurality of dielectric films.
6. The capacitor of claim 1 , wherein a thickness of the dielectric film having the smallest conductance has a greater effect on the capacitance of the capacitor than a thickness of a dielectric film having the largest conductance among the plurality of dielectric films.
7. The capacitor of claim 1 , wherein a thickness of the dielectric film having the smallest conductance is 4 nm or less.
8. The capacitor of claim 1 , wherein a thickness of a dielectric film having the largest conductance among the plurality of dielectric films is 2 nm or less.
9. The capacitor of claim 1 , wherein a thickness of the capacitor is 5 nm or less.
10. The capacitor of claim 1 , wherein a difference in conductance between a dielectric film having a largest conductance and the dielectric film having the smallest conductance is 100 times or more.
11. The capacitor of claim 1 , further comprising:
a first insertion film,
wherein the plurality of dielectric films include a first, second, and third dielectric film, and
the first insertion film is between the second and the third dielectric film.
12. The capacitor of claim 11 , wherein the second and the third dielectric films directly contact the first insertion film.
13. The capacitor of claim 11 , wherein a thickness of the first insertion film is less than twice a thickness of an atomic layer included in the first insertion film.
14. The capacitor of claim 11 , wherein the second and the third dielectric films comprise the same material.
15. The capacitor of claim 11 , wherein the first and the second dielectric films are in direct contact and include different materials from each other.
16. The capacitor of claim 11 , further comprising:
a second insertion film between the first and the second dielectric films.
17. A semiconductor device comprising:
a transistor; and
the capacitor according to claim 1 electrically connected to the transistor.