Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material
Some embodiments include an integrated structure having vertically-stacked conductive levels. Upper conductive levels are memory cell levels, and a lower conductive level is a select device level. Conductively-doped semiconductor material is under the select device level. Channel material extends along the memory cell levels and the select device level, and extends into the conductively-doped semiconductor material. A region of the channel material that extends into the conductively-doped semiconductor material is a lower region of the channel material and has a vertical sidewall. Tunneling material, charge-storage material and charge-blocking material extend along the channel material and are between the channel material and the conductive levels. The tunneling material, charge-storage material and charge-blocking material are not along at least a portion of the vertical sidewall of the lower region of the channel material, and the conductively-doped semiconductor material is directly against such portion. Some embodiments include methods of forming integrated structures.
1. An integrated structure comprising:
a vertically extending opening, the vertically extending opening having a vertical length extending through a stack comprising a plurality of alternating conductive levels and dielectric levels and into a first material;
a channel material extending vertically within the opening, the channel material having sidewalls extending an entirety of the vertical length of the opening and having a bottommost surface in direct physical contact with the first material;
a tunneling material, a charge-storage material and a charge-blocking material within the opening and extending along an upper portion of the channel material sidewalls and along a lower portion of the channel material sidewalls; and
a second material in direct physical contact with the channel material along an intermediate portion of the channel material sidewalls, the intermediate portion extending between the upper portion and the lower portion.
2. The integrated structure of claim 1 wherein the first and second materials are a same composition as one another.
3. The integrated structure of claim 2 wherein the first and second materials are a conductively-doped semiconductor material.
4. The integrated structure of claim 1 wherein the first and second materials are different compositions relative to one another.
5. The integrated structure of claim 4 wherein the first and second materials are different conductively-doped semiconductor materials.
6. The integrated structure of claim 1 further comprising a metal-containing material under the first material, and in direct contact with the first material.
7. An integrated structure comprising:
a vertically extending opening, the vertically extending opening having a vertical length extending through a stack comprising a plurality of alternating conductive levels and dielectric levels and into a first material;
a metal-containing material under the first material, and in direct contact with the first material;
a channel material extending vertically within the opening, the channel material having sidewalls extending an entirety of the vertical length of the opening, a lowest portion of the channel material extending into the metal-containing material;
a tunneling material, a charge-storage material and a charge-blocking material within the opening and extending along an upper portion of the channel material sidewalls and along a lower portion of the channel material sidewalls; and
a second material in direct physical contact with the channel material along an intermediate portion of the channel material sidewalls, the intermediate portion extending between the upper portion and the lower portion.