Methods and circuits for diode-based display backplanes and electronic displays
An electronic display includes a plurality of pixels, each pixel including a data line, first and second selection lines and a common electrode. A control circuit element includes first and second diode-like elements coupled between the first and second selection lines and a charging node. A charging capacitive element is coupled between the charging node and the date line. An active pixel element is coupled between the charging node and the common electrode. The common electrode can overly the entire electronic display and is a suitable transparent conductive material. Each of the first and second diode-like elements includes an amorphous metal non-linear resistor. The active pixel element may include one of liquid crystal display circuitry, light emitting diode circuitry, and electrophoretic circuitry.
1. A pixel device, comprising:
a first non-linear element coupled between a first selection line and a charging node;
a second non-linear element coupled between a second selection line and the charging node, the first and second non-linear elements include an amorphous metal non-linear resistor;
a charging capacitive element coupled between a data line and the charging node; and
a pixel element coupled between the charging node and a common electrode.
2. The device of claim 1 , wherein the pixel element includes one of a liquid crystal display element, a light emitting diode element, a micro-light emitting diode element, an organic light emitting diode element, or an electrophoretic display element.
3. The device of claim 1 , wherein the amorphous metal non-linear resistor includes a tunneling junction.
4. The device of claim 1 , wherein the pixel element includes a charge producing sensor.
5. The device of claim 1 , wherein the common electrode may be selectively coupled to a bias voltage.
6. The device of claim 1 , wherein the common electrode may be selectively coupled to ground.
7. The pixel device of claim 1 , further comprising:
a first voltage across the storage capacitor;
a second voltage across the first selection line different from the first voltage;
a third voltage across the second selection line different from the first and second voltages;
a first threshold voltage of the first non-linear element;
a second threshold voltage of the second non-linear element; and
a difference in voltage between the second voltage and the third voltage, the difference in voltage being greater than the first threshold value and being greater than the second threshold value.
8. A pixel device, comprising:
a first amorphous metal non-linear resistor coupled between a first selection line and a charging node;
a second amorphous metal non-linear resistor coupled between a second selection line and the charging node;
a charging capacitive element coupled between a data line and the charging node; and
a pixel element coupled between the charging node and a common electrode.
9. The device of claim 8 , wherein the first amorphous metal non-linear resistor includes a tunneling junction.
10. The device of claim 9 , wherein the second amorphous metal non-linear resistor includes a tunneling insulator.
11. The device of claim 10 , wherein the pixel element includes a charge producing sensor.
12. The device of claim 8 , wherein the common electrode may be selectively coupled to a bias voltage.
13. The device of claim 8 , wherein the common electrode may be selectively coupled to ground.
14. A device, comprising,
a first amorphous metal non-linear resistor, the first amorphous metal non-linear resistor coupled between a first selection line and a charging node including:
a first amorphous metal layer extending in a first direction;
a first insulating layer on the first amorphous metal layer;
a first electrode extending in a second direction that is transverse to the first direction, the first electrode overlapping the first amorphous metal layer;
a second electrode extending in the second direction, the second electrode overlapping the first amorphous metal layer;
a second amorphous metal non-linear resistor coupled between a second selection line and the charging node;
a storage capacitor adjacent to the first amorphous metal layer and coupled between a data line and the charging node; and
a pixel element coupled between the charging node and a common electrode.
15. The device of claim 14 wherein the second amorphous metal non-linear resistor includes a second amorphous metal layer and a second insulating layer on the second amorphous metal layer.
16. The device of claim 15 wherein the second amorphous metal non-linear resistor includes a third electrode that overlaps the second amorphous metal layer.
17. The device of claim 16 wherein the second amorphous metal non-linear resistor includes a fourth electrode that overlaps the second amorphous metal layer.