RF impedance matching networks for substrate processing platform
Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.
1. A matching network configured for use with a plasma processing chamber, comprising:
a local controller connectable to a system controller of the plasma processing chamber;
a first motorized capacitor connected to the local controller;
a second motorized capacitor connected to the first motorized capacitor;
a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively; and
at least one of a first communication port configured to connect to at least one of the local controller or the system controller and a second communication port configured to connect to an external computing device for manual control of the matching network;
an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.
2. The matching network of claim 1 , further comprising an interlock circuitry connected to the local controller and configured to shut down RF power output from an RF generator when reflected RF power exceeds a certain percentage of forward power.
3. The matching network of claim 1 , wherein the first motorized capacitor is connected in parallel with the second motorized capacitor.
4. The matching network of claim 1 , wherein the matching network is one of an L type or a Pi type.
5. The matching network of claim 1 , wherein the first communication port is a first serial port and the second communication port is a second serial port.
6. The matching network of claim 1 , wherein the EtherCAT communication interface directly connects an RF generator to each of the first sensor and the second sensor for transmitting a TTL signal from the RF generator to each of the first sensor and the second sensor.
7. The matching network of claim 1 , wherein the local controller is an EtherCAT master device and the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor are EtherCAT slave devices, and
wherein, when connected, the local controller is configured to perform a master to slave conversion so that the system controller is the EtherCAT master device and the local controller is EtherCAT slave device.
8. A plasma processing system comprising:
an RF generator;
a plasma processing chamber connected to the RF generator and comprising a system controller configured for processing a substrate; and
a matching network comprising:
a local controller connectable to the system controller of the plasma processing chamber;
a first motorized capacitor connected to the local controller;
a second motorized capacitor connected to the first motorized capacitor;
a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively;
at least one of a first communication port configured to connect to at least one of the local controller or the system controller and a second communication port configured to connect to an external computing device for manual control of the matching network; and
an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.
9. The plasma processing system of claim 8 , wherein the matching network further comprises an interlock circuitry connected to the local controller and configured to shut down RF power output from the RF generator when reflected RF power exceeds a certain percentage of forward power.
10. The plasma processing system of claim 8 , wherein the first motorized capacitor is connected in parallel with the second motorized capacitor.
11. The plasma processing system of claim 8 , wherein the matching network is one of an L type or a Pi type.
12. The plasma processing system of claim 8 , wherein the first communication port is a first serial port and the second communication port is a second serial port.
13. The plasma processing system of claim 8 , wherein the EtherCAT communication interface directly connects the RF generator to each of the first sensor and the second sensor for transmitting a TTL signal from the RF generator to each of the first sensor and the second sensor.
14. The plasma processing system of claim 8 , wherein the local controller is an EtherCAT master device and the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor are EtherCAT slave devices, and
wherein, when connected, the local controller is configured to perform a master to slave conversion so that the system controller is the EtherCAT master device and the local controller is EtherCAT slave device.
15. A plasma processing system comprising:
a first RF generator and a second RF generator;
a plasma processing chamber connected to each of the first RF generator and the second RF generator and comprising a system controller configured for processing a substrate; and
a first matching network and a second matching network each comprising:
a first motorized capacitor;
a second motorized capacitor connected to the first motorized capacitor;
a first sensor at an input and a second sensor at an output for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, wherein the first motorized capacitor of the first matching network is connected to the first motorized capacitor of the second matching network;
at least one of a first communication port configured to connect to at least one of the local controller or the system controller and a second communication port configured to connect to an external computing device for manual control of the matching network; and
an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting at least one of a local controller or the system controller to the to the first motorized capacitor, second motorized capacitor, first sensor, and second sensor of each of the first matching network and the second matching network.
16. The plasma processing system of claim 15 , wherein each of the first matching network and the second matching network further comprises an interlock circuitry connected to at least one of the local controller or the system controller and configured to shut down RF power output from an RF generator when reflected RF power exceeds a certain percentage of forward power.
17. The plasma processing system of claim 15 , wherein the first motorized capacitor is connected in parallel with the second motorized capacitor.
18. The plasma processing system of claim 15 , wherein the first matching network and the second matching network is one of an L type or a Pi type.
19. The plasma processing system of claim 15 , wherein the first communication port is a first serial port and the second communication network is a second serial port configured.
20. The plasma processing system of claim 15 , wherein the EtherCAT communication interface directly connects the first RF generator and the second RF generator to each of the first sensor and the second sensor for transmitting a TTL signal from the first RF generator and the second RF generator to each of the first sensor and the second sensor.