Systems and methods for eliminating electromigration and self-heat violations in a mask layout block
Computer-implemented systems and methods for improving construction of a mask layout block, for eliminating electromigration and self-heat violations during construction of a mask layout block, and for maintaining process design rules and layout connectivity during construction of a mask layout block are provided. At least one selected polygon is analyzed and a selected position of the selected polygon determined. The systems and methods obtain one or more electromigration rules or self-heat rules associated with the selected polygon. An information window with the one or more electromigration or self-heat rules and a violation marker associated with the selected position of the selected polygon are provided. The system determines if the selected position of the selected polygon or a length or width of the selected polygon violates an electromigration rule or self-heat rule. The violation marker prevents creating, placing, and editing the selected polygon if the selected position would violate at least one of the one or more electromigration rules or self-heat rules.
1. A computer-implemented method for eliminating electromigration and self-heat violations during construction of a mask layout block, comprising:
analyzing a selected polygon including scanning an entire selected polygon within boundaries of the selected polygon by taking a tracking step in a tracking direction and taking a width run across a width of the selected polygon;
determining a selected position of the selected polygon;
obtaining one or more electromigration rules or self-heat rules associated with the selected polygon;
providing an information window with the one or more electromigration rules or self-heat rules; and
providing a violation marker associated with the selected position of the selected polygon, the violation marker preventing creating, placing, and editing the selected polygon if the selected position would violate at least one of the one or more electromigration rules or self-heat rules.
2. The method of claim 1 wherein the one or more electromigration rules or self-heat rules are obtained from one or more of: a technology file or an external constraints file.
3. The method of claim 1 wherein the violation marker graphically represents a characteristic of the selected polygon, the characteristic comprising one or more of:
width, space, and length.
4. The method of claim 1 further comprising analyzing the mask layout block for violations of the one or more electromigration rules or self-heat rules.
5. The method of claim 1 further comprising determining if the selected position contains a number of contact polygons or VIA polygons in compliance with the one or more electromigration rules and self-heat rules.
6. The method of claim 5 further comprising modifying the number of contact polygons or VIA polygons to ensure compliance with the electromigration rules and self-heat rules.
7. The method of claim 1 further comprising determining if the selected position for the selected polygon creates a feature dimension in the mask layout block greater than at least one of the one or more electromigration rules or self-heat rules.
8. The method of claim 7 further comprising modifying the selected position such that the feature dimension is approximately equal to the at least one of the electromigration rules and self-heat rules.
9. A computer-implemented method of improving construction of a mask layout block, comprising:
analyzing a selected polygon and determining a selected position of the selected polygon including detecting intersections between multiple line segments;
providing a violation marker associated with the selected position of the selected polygon;
determining if the selected position of the selected polygon produces a violation of one or more electromigration rules or self-heat rules associated with the selected polygon; and
preventing creating, placing, or editing of the selected polygon at the selected position if the selected position would violate at least one of the one or more electromigration rules or self-heat rules.
10. The method of claim 9 further comprising placing the selected polygon in an original position in the mask layout block if there is a violation of at least one of the one or more electromigration rules or self-heat rules.
11. The method of claim 10 further comprising adjusting a characteristic of the selected polygon, the characteristic comprising one or more of: width, space, and length.
12. The method of claim 10 further comprising adjusting a number of contact polygons or VIA polygons until the violation is eliminated.
13. The method of claim 9 further comprising determining if the selected position produces a violation of at least one of the one or more electromigration rules or self-heat rules in a top-level cell.
14. The method of claim 9 further comprising generating a mask layout file from the mask layout block, the mask layout file being without a violation of at least one of the one or more electromigration rules or self-heat rules.
15. A system for maintaining process design rules and layout connectivity during construction of a mask layout block, comprising:
a processor;
a computer-readable memory;
a polygon analysis module configured to analyze a selected position of a selected polygon in the mask layout block;
a violation marker associated with the selected polygon;
an information window having electromigration rules or self-heat rules; and
a convolutional neural network learning characteristics of the mask layout block;
wherein the system determines if the selected position of the selected polygon or a length or width of the selected polygon violates an electromigration rule or self-heat rule;
wherein the system prevents creation, placement, and editing of the selected polygon at the selected position if the selected position or the length or the width would violate an electromigration rule or a self-heat rule; and
wherein the convolutional neural network identifies additional polygons based on analysis of the selected polygon and provides alerts in case of reliability violations in the additional polygons.
16. The system of claim 15 wherein the mask layout block is hierarchical and includes at least one top-level cell and at least one sub-cell.
17. The system of claim 15 wherein when there is a violation of an electromigration rule or a self-heat rule, the system places the selected polygon in an original position in the mask layout block.
18. The system of claim 15 wherein when there is a violation of an electromigration rule or a self-heat rule, the system adjusts the selected position of the selected polygon until the violation of the electromigration rule or self-heat rule is eliminated.
19. The system of claim 15 wherein when there is a violation of an electromigration rule or a self-heat rule, the system adjusts at least a part of the length or width of the selected polygon until the violation of the electromigration or self-heat rule is eliminated.
20. The system of claim 15 further comprising a technology file or and external constraints file containing the electromigration rules or self-heat rules.