Methods of bonding of semiconductor elements to substrates, and related bonding systems
A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.
1. A bonding system for bonding a semiconductor element to a substrate, the bonding system comprising:
a substrate oxide prevention chamber configured to receive a substrate, the substrate including a plurality of first electrically conductive structures, the substrate oxide prevention chamber having an inert environment when receiving the substrate;
a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate, the semiconductor element including a plurality of second electrically conductive structures, the plurality of first electrically conductive structures being configured to be bonded with corresponding ones of the plurality of second electrically conductive structures;
a bond head including a bonding tool for bonding the semiconductor element to the substrate, the reducing gas delivery system being integrated with the bond head; and
a substrate support structure, the substrate support structure supporting the substrate during bonding of the semiconductor element to the substrate.
2. The bonding system of claim 1 further comprising a substrate transfer system for transferring the substrate to the substrate oxide prevention chamber.
3. The bonding system of claim 1 wherein the substrate oxide prevention chamber is provided with nitrogen to create the inert environment.
4. The bonding system of claim 1 further comprising a material handling system for moving the substrate within the substrate oxide prevention chamber.
5. The bonding system of claim 1 wherein the substrate oxide prevention chamber includes a bonding location for receiving the substrate during bonding of the semiconductor element to the substrate.
6. The bonding system of claim 1 further comprising another chamber housing at least a portion of (i) the substrate oxide prevention chamber and (ii) the reducing gas delivery system.
7. The bonding system of claim 6 further comprising an exhaust system for pulling exhaust from the another chamber.
8. A method of bonding a semiconductor element to a substrate, the method comprising the steps of:
(a) moving a substrate into a substrate oxide prevention chamber, the substrate including a plurality of first electrically conductive structures, the substrate oxide prevention chamber having an inert environment when receiving the substrate;
(b) providing a reducing gas environment during bonding of a semiconductor element to the substrate, the semiconductor element including a plurality of second electrically conductive structures, the plurality of first electrically conductive structures being configured to be bonded with corresponding ones of the plurality of second electrically conductive structures; and
(c) bonding the semiconductor element to the substrate using (i) a bond head including a bonding tool for bonding the semiconductor element to the substrate and (ii) a reducing gas delivery system, the substrate being supported by a support structure during bonding of the semiconductor element to the substrate, the reducing gas delivery system being integrated with the bond head.
9. The method of claim 8 wherein step (a) includes moving the substrate from a substrate source to the substrate oxide prevention chamber.
10. The method of claim 9 wherein step (a) further includes moving the substrate from the substrate source to the substrate oxide prevention chamber using a substrate transfer system.
11. The method of claim 8 further comprising providing the inert environment to the substrate oxide prevention chamber using nitrogen.
12. The method of claim 8 further comprising moving the substrate through the substrate oxide prevention chamber with a material handling system.
13. The method of claim 8 further comprising bonding the semiconductor element to the substrate at a bonding location in the substrate oxide prevention chamber.
14. The method of claim 8 further comprising bonding the semiconductor element to the substrate at a portion of bond sites of the substrate.
15. A bonding system for bonding a semiconductor element to a substrate, the bonding system comprising:
a substrate oxide prevention chamber configured to receive a substrate, the substrate including a plurality of first electrically conductive structures, the substrate oxide prevention chamber having an inert environment when receiving the substrate;
a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate, the semiconductor element including a plurality of second electrically conductive structures, the plurality of first electrically conductive structures being configured to be bonded with corresponding ones of the plurality of second electrically conductive structures;
a bond head including a bonding tool for bonding the semiconductor element to the substrate; and
a substrate support structure, the substrate support structure supporting the substrate during bonding of the semiconductor element to the substrate, the reducing gas delivery system being integrated with the substrate support structure.
16. The bonding system of claim 15 further comprising a substrate transfer system for transferring the substrate to the substrate oxide prevention chamber.
17. The bonding system of claim 15 wherein the substrate oxide prevention chamber is provided with nitrogen to create the inert environment.
18. The bonding system of claim 15 further comprising a material handling system for moving the substrate within the substrate oxide prevention chamber.
19. The bonding system of claim 15 wherein the substrate oxide prevention chamber includes a bonding location for receiving the substrate during bonding of the semiconductor element to the substrate.
20. The bonding system of claim 15 further comprising another chamber housing at least a portion of (i) the substrate oxide prevention chamber and (ii) the reducing gas delivery system.
21. The bonding system of claim 20 further comprising an exhaust system for pulling exhaust from the another chamber.
22. A method of bonding a semiconductor element to a substrate, the method comprising the steps of:
(a) moving a substrate into a substrate oxide prevention chamber, the substrate including a plurality of first electrically conductive structures, the substrate oxide prevention chamber having an inert environment when receiving the substrate;
(b) providing a reducing gas environment during bonding of a semiconductor element to the substrate, the semiconductor element including a plurality of second electrically conductive structures, the plurality of first electrically conductive structures being configured to be bonded with corresponding ones of the plurality of second electrically conductive structures; and
(c) bonding the semiconductor element to the substrate using (i) a bond head including a bonding tool for bonding the semiconductor element to the substrate and (ii) a reducing gas delivery system, the substrate being supported by a support structure during bonding of the semiconductor element to the substrate, the reducing gas delivery system being integrated with the support structure.
23. The method of claim 22 wherein step (a) includes moving the substrate from a substrate source to the substrate oxide prevention chamber.
24. The method of claim 23 wherein step (a) further includes moving the substrate from the substrate source to the substrate oxide prevention chamber using a substrate transfer system.
25. The method of claim 22 further comprising providing the inert environment to the substrate oxide prevention chamber using nitrogen.
26. The method of claim 22 further comprising moving the substrate through the substrate oxide prevention chamber with a material handling system.
27. The method of claim 22 further comprising bonding the semiconductor element to the substrate at a bonding location in the substrate oxide prevention chamber.
28. The method of claim 22 further comprising bonding the semiconductor element to the substrate at a portion of bond sites of the substrate.