IP Library Granted Patent US 12,590,380
Granted Patent B2
US 12,590,380 · App. 17/317,562 · Granted Mar 31, 2026

Electrodeposition of pure phase SnSb from eutectic ethaline solution for sodium-ion and lithium-ion battery anodes

Inventors: Jeffrey Ma (Fort Collins, CO); Amy L. Prieto (Fort Collins, CO)
Assignee: Colorado State University Research Foundation
C25D3/30C25D3/34H01M4/0452H01M4/366H01M4/387H01M10/0525H01M10/36
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Quick Facts
Patent No.
US 12,590,380
App. No.
17/317,562
Granted
Mar 31, 2026
Kind
B2
Abstract

A method for electrodeposition of pure phase crystalline SnSb from deep eutectic ethaline is described. Thin films of SnSb were synthesized using a solution containing equimolar Sn(II) and Sb(III) chlorides as precursors, and ethaline (1:2 by weight of choline chloride and ethylene chloride) was used as the solvent for the electrodeposition solution. The purity of the product is important, as the impure phase is found to be detrimental to the material's lifetime as both a sodium-ion and a lithium-ion anode. For sodium-ions, the directly deposited electrode was able to retain 95% capacity after 300 cycles, and only fall below 80% capacity retention after 800 cycles when cycled versus sodium. The electrodeposited SnSb used as a Li-ion battery anode showed stability, only falling below 80% capacity retention after 400 cycles.

Claims (30)

1 . A method for electrodeposition of SnSb on a substrate, comprising:

preparing a nonaqueous solution containing equimolar quantities of Sn(II) and Sb(III) salts in a nonaqueous solvent comprising a deep eutectic solvent;

inserting a conducting metal substrate into said nonaqueous solution;

applying a potential more negative than −0.55 V vs. Ag/Ag + to the conducting metal substrate at 25° C. for sufficient time to form a thin film of pure phase crystalline SnSb thereon; and

heating said nonaqueous solution before said step of applying the potential for driving off water that is present.

2 . The method of claim 1 wherein the deep eutectic solvent comprises ethaline.

3 . The method of claim 1 , wherein Sn(II) and Sb(III) salts comprise Sn(II) and Sb(III) chlorides.

4 . The method of claim 1 , wherein the conducting metal substrate comprises a nickel substrate.

5 . The method of claim 4 , wherein the applied potential is about −0.7 V vs. Ag/Ag + .

6 . The method of claim 1 , wherein the salts of Sn(II) and Sb(III) are chosen from tin and antimony sulfates, citrate salts of tin and antimony, and salts of tin and antimony reactions with gluconic acid and tartaric acid.

7 . A method for forming a high stability sodium-ion battery anode, comprising:

preparing a nonaqueous solution containing equimolar quantities of Sn(II) and Sb(III) salts, in a nonaqueous solvent comprising a deep eutectic solvent;

inserting a conducting metal substrate into said nonaqueous solution;

applying a potential more negative than −0.55 V vs. Ag/Ag + to the conducting metal substrate at 25° C. for sufficient time to form a thin film of pure phase crystalline SnSb thereon; and

heating said nonaqueous solution before said step of applying the potential for driving off water that is present.

8 . The method of claim 7 wherein the deep eutectic solvent comprises ethaline.

9 . The method of claim 7 , wherein Sn(II) and Sb(III) salts comprise Sn(II) and Sb(III) chlorides.

10 . The method of claim 7 , wherein the conducting metal substrate comprises a nickel substrate.

11 . The method of claim 10 , wherein the applied potential is about −0.7 V vs. Ag/Ag + .

12 . The method of claim 7 , wherein the salts of Sn(II) and Sb(III) are chosen from tin and antimony sulfates, citrate salts of tin and antimony, and salts of tin and antimony reactions with gluconic acid and tartaric acid.

13 . A method for forming a high stability lithium-ion battery anode, comprising:

preparing a nonaqueous solution containing equimolar quantities of Sn(II) and Sb(III) salts, in a nonaqueous solvent comprising a deep eutectic solvent;

inserting a conducting metal substrate into said nonaqueous solution;

applying a potential more negative than −0.55 V vs. Ag/Ag + to the conducting metal substrate at 25° C. for sufficient time to form a thin film of pure phase crystalline SnSb thereon; and

heating said nonaqueous solution before said step of applying the potential for driving off water that is present.

14 . The method of claim 13 wherein the deep eutectic solvent comprises ethaline.

15 . The method of claim 13 , wherein Sn(II) and Sb(III) salts comprise Sn(II) and Sb(III) chlorides.

16 . The method of claim 13 , wherein the conducting metal substrate comprises a nickel substrate.

17 . The method of claim 16 , wherein the applied potential is about −0.7 V vs. Ag/Ag + .

18 . The method of claim 13 , wherein the salts of Sn(II) and Sb(III) are chosen from tin and antimony sulfates, citrate salts of tin and antimony, and salts of tin and antimony reactions with gluconic acid and tartaric acid.

Assignments (2)
CONFIRMATORY LICENSE Recorded Oct 1, 2024
From: COLORADO STATE UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 069054/0796 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 28, 2021
From: MA, JEFFREY; PRIETO, AMY L.
To: COLORADO STATE UNVERSITY RESEARCH FOUNDATION
Reel/Frame 056687/0092 →
Continuity (2)
Provisional Application 63023145 · May 11, 2020
Related Publication 20210348292A1 · Nov 11, 2021
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