Image pickup device, method of manufacturing image pickup device, and electronic apparatus
Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
1. An imaging device comprising:
a semiconductor substrate comprising a light-receiving region and a peripheral region, the light-receiving region including a photoelectric conversion region;
a first separation region disposed in the light-receiving region;
a second separation region disposed in the peripheral region; and
a third separation region disposed in the peripheral region and disposed under the second separation region in the semiconductor substrate,
wherein the third separation region includes a first portion, a second portion, and a third portion in a cross-sectional view,
wherein the second separation region is disposed between the first portion and the third portion in the cross-sectional view,
wherein the second separation region contacts with the second portion of the third separation region, and
wherein a width of the first portion is different than a width of the third portion in the cross-sectional view.
2. The imaging device according to claim 1 , wherein the semiconductor substrate further comprises a first surface and a second surface opposite to the first surface, wherein the first surface is a light-receiving surface.
3. The imaging device according to claim 2 , further comprising a wiring layer disposed under the second surface.
4. The imaging device according to claim 3 , wherein the third separation region is disposed above the wiring layer.
5. The imaging device according to claim 1 , wherein a height of the second portion is different than a height of the first portion in the cross-sectional view.
6. The imaging device according to claim 5 , wherein the height of the second portion is higher than the height of first portion in the cross-sectional view.
7. The imaging device according to claim 2 , wherein the width of the first portion and the width of the third portion are parallel to the first surface in the cross-sectional view.
8. The imaging device according to claim 1 , wherein the first separation region includes a first trench.
9. The imaging device according to claim 8 , wherein the second separation region includes a second trench.
10. The imaging device according to claim 9 , wherein the semiconductor substrate further comprises a first surface and a second surface opposite to the first surface, wherein the first surface is a light-receiving surface, and wherein the first trench and the second trench extend from the first surface to the second surface.
11. The imaging device according to claim 1 , wherein the third separation region includes a third trench.
12. The imaging device according to claim 11 , wherein the semiconductor substrate further comprises a first surface and a second surface opposite to the first surface, wherein the first surface is a light-receiving surface, and wherein the third trench extends from the second surface to the first surface.
13. The imaging device according to claim 1 , wherein a material including silicon is disposed in the first separation region and the second separation region.
14. The imaging device according to claim 13 , wherein an insulation material is disposed in the third separation region.
15. The imaging device according to claim 14 , wherein the material including silicon contacts with the insulation material.
16. The imaging device according to claim 1 , wherein the peripheral region surrounds the light-receiving region.
17. An electronic apparatus provided with an image pickup device, the image pickup device comprising:
a semiconductor substrate including a light-receiving region and a peripheral region, the light-receiving region including a photoelectric conversion region;
a first separation region disposed in the light-receiving region;
a second separation region disposed in the peripheral region; and
a third separation region disposed in the peripheral region and disposed under the second separation region in the semiconductor substrate,
wherein the third separation region includes a first portion, a second portion, and a third portion in a cross-sectional view,
wherein the second separation region is disposed between the first portion and the second portion in the cross-sectional view,
wherein the second separation region contacts with the second portion of the third separation region, and
wherein a width of the first portion is different than a width of the third portion in the cross-sectional view.
18. The electronic apparatus according to claim 17 , wherein the semiconductor substrate further comprises a first surface and a second surface opposite to the first surface, wherein the first surface is a light-receiving surface.
19. A method of manufacturing an image pickup device, the method comprising:
providing a semiconductor substrate comprising a light-receiving region and a peripheral region, the light-receiving region including a photoelectric conversion region;
disposing a first separation region in the light-receiving region;
disposing a second separation region in the peripheral region; and
disposing a third separation region in the peripheral region and disposed under the second separation region in the semiconductor substrate,
wherein the third separation region includes a first portion, a second portion, and a third portion in a cross-sectional view,
wherein the second separation region is disposed between the first portion and the second portion in the cross-sectional view,
wherein the second separation region contacts with the second portion of the third separation region, and
wherein a width of the first portion is different than a width of the third portion in the cross-sectional view.
20. The method according to claim 19 , wherein the semiconductor substrate further comprises a first surface and a second surface opposite to the first surface, wherein the first surface is a light-receiving surface.