Filter device

1. A filter device comprising:

a common connection terminal;

a first bandpass filter connected to the common connection terminal, the first bandpass filter including a piezoelectric substrate, a plurality of acoustic wave resonators on the piezoelectric substrate, and an inductor; and

a second bandpass filter connected to the common connection terminal, a pass band of the second bandpass filter being lower in frequency than a pass band of the first bandpass filter; wherein

an SH wave is used;

the first bandpass filter is a ladder filter including a series arm resonator and a plurality of parallel arm resonators, each of the series arm resonator and the plurality of parallel arm resonators being one of the plurality of acoustic wave resonators and including an interdigital transducer electrode; and

of the plurality of parallel arm resonators of the first bandpass filter, the inductor is connected in series to the parallel arm resonator with a shortest electrode finger pitch of the interdigital transducer electrode.

2. The filter device according to claim 1 , wherein the inductor is connected in series to a common connection terminal side of the parallel arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode.

3. The filter device according to claim 1 , wherein the inductor is connected in series to a ground potential side of the parallel arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode.

4. The filter device according to claim 1 , wherein of the plurality of acoustic wave resonators, the parallel arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode is closest to the common connection terminal.

5. The filter device according to claim 1 , wherein the piezoelectric substrate is a lithium tantalate substrate.

6. The filter device according to claim 1 , wherein

the piezoelectric substrate includes a high acoustic velocity material layer and a piezoelectric layer directly or indirectly on the high acoustic velocity material layer; and

an acoustic velocity of a bulk wave propagating through the high acoustic velocity material layer is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.

7. The filter device according to claim 6 , wherein the high acoustic velocity material layer is a high acoustic velocity support substrate.

8. The filter device according to claim 6 , wherein

the piezoelectric substrate further includes a support substrate; and

the high acoustic velocity material layer is a high acoustic velocity film between the support substrate and the piezoelectric layer.

9. The filter device according to claim 6 , wherein

the piezoelectric substrate further includes a low acoustic velocity film between the high acoustic velocity material layer and the piezoelectric layer; and

an acoustic velocity of a bulk wave propagating through the low acoustic velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer.

10. The filter device according to claim 1 , further comprising:

at least one bandpass filter connected in common to the common connection terminal, together with the first bandpass filter and the second bandpass filter.

11. A filter device comprising:

a common connection terminal;

a first bandpass filter connected to the common connection terminal, the first bandpass filter including a piezoelectric substrate, a plurality of acoustic wave resonators on the piezoelectric substrate, and an inductor; and

a second bandpass filter connected to the common connection terminal, a pass band of the second bandpass filter being lower in frequency than a pass band of the first bandpass filter; wherein

an SH wave is used;

the first bandpass filter is a ladder filter including a parallel arm resonator and a plurality of series arm resonators, each of the plurality of series arm resonators and the parallel arm resonator being one of the plurality of acoustic wave resonators and including an interdigital transducer electrode; and

of the plurality of series arm resonators of the first bandpass filter, the inductor is connected in series to a common connection terminal side of the series arm resonator with a shortest electrode finger pitch of the interdigital transducer electrode.

12. The filter device according to claim 11 , wherein of the plurality of acoustic wave resonators, the series arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode is closest to the common connection terminal.

13. A filter device comprising:

a common connection terminal;

a first bandpass filter connected to the common connection terminal, the first bandpass filter including a piezoelectric substrate, a plurality of acoustic wave resonators on the piezoelectric substrate, and an inductor; and

a second bandpass filter connected to the common connection terminal, a pass band of the second bandpass filter being lower in frequency than a pass band of the first bandpass filter; wherein

the piezoelectric substrate includes a lithium tantalate layer in which θ of Euler angles (ϕ, θ, ψ) is about −54° to about −42°;

the first bandpass filter is a ladder filter including a parallel arm resonator and a plurality of series arm resonators, each of the plurality of series arm resonators and the parallel arm resonator being one of the plurality of acoustic wave resonators and including an interdigital transducer electrode; and

of the plurality of series arm resonators of the first bandpass filter, the inductor is connected in series to a common connection terminal side of the series arm resonator with a shortest electrode finger pitch of the interdigital transducer electrode.

14. The filter device according to claim 13 , wherein of the plurality of acoustic wave resonators, the series arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode is closest to the common connection terminal.

15. A filter device comprising:

a common connection terminal;

a first bandpass filter connected to the common connection terminal, the first bandpass filter including a piezoelectric substrate, a plurality of acoustic wave resonators on the piezoelectric substrate, and an inductor; and

a second bandpass filter connected to the common connection terminal, a pass band of the second bandpass filter being lower in frequency than a pass band of the first bandpass filter; wherein

the piezoelectric substrate includes a lithium tantalate layer in which θ of Euler angles (ϕ, θ, ψ) is about −54° to about −42°;

the first bandpass filter is a ladder filter including a series arm resonator and a plurality of parallel arm resonators, each of the series arm resonator and the plurality of parallel arm resonators being one of the plurality of acoustic wave resonators and including an interdigital transducer electrode; and

of the plurality of parallel arm resonators of the first bandpass filter, the inductor is connected in series to the parallel arm resonator with a shortest electrode finger pitch of the interdigital transducer electrode.

16. The filter device according to claim 15 , wherein the inductor is connected in series to a common connection terminal side of the parallel arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode.

17. The filter device according to claim 15 , wherein the inductor is connected in series to a ground potential side of the parallel arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode.

18. The filter device according to claim 15 , wherein of the plurality of acoustic wave resonators, the parallel arm resonator with the shortest electrode finger pitch of the interdigital transducer electrode is closest to the common connection terminal.

19. The filter device according to claim 15 , wherein the piezoelectric substrate is a lithium tantalate substrate.

20. The filter device according to claim 11 , wherein the piezoelectric substrate is a lithium tantalate substrate.