Preparation method and device of inductance element, inductance element, and superconducting circuit

1. A method for creating a quantum chip that includes a superconducting circuit, comprising:

creating an inductance element having a kinetic inductance of the inductance element greater than a geometric inductance of the inductance element, creation comprising:

acquiring an aluminum titanium nitride compound for preparing the inductance element, a superconducting coherence length and a magnetic field penetration depth of the aluminum titanium nitride compound meeting a preset condition; and

decomposing, by annealing, the aluminum titanium nitride compound into an aluminum nitride non-superconductor phase and a titanium nitride superconductor phase;

determining the kinetic inductance of the inductance element using a microwave resonator; and

incorporating the inductance element into the superconducting circuit, a configuration of the superconducting circuit based on the determined kinetic inductance of the inductance element.

2. The method of claim 1 , wherein the preset condition comprises that the superconducting coherence length is shorter than the magnetic field penetration depth.

3. The method of claim 1 , further comprising:

acquiring an execution operation for the preset condition; and

configuring the preset condition based on the execution operation.

4. The method of claim 1 , wherein the aluminum nitride non-superconductor phase is nano-sized.

5. The method of claim 1 , wherein the geometric inductance is related to a fine structure constant of the inductance element.

6. The method of claim 1 , wherein acquiring the aluminum titanium nitride compound for preparing the inductance element comprises:

acquiring a raw material for preparing the inductance element; and

performing thin film deposition on the raw material to acquire the compound.

7. The method of claim 1 , wherein creating the inductance element further comprises:

acquiring an annealing control parameter; and

wherein the aluminum titanium nitride compound is decomposed by annealing in accordance with the annealing control parameter.

8. The method of claim 7 , wherein the annealing control parameter comprises at least one of an annealing temperature or an annealing time.

9. The method of claim 8 , wherein the annealing temperature is lower than a melting point temperature of the aluminum titanium nitride compound and higher than a preset temperature threshold corresponding to the aluminum titanium nitride compound, and wherein the preset temperature threshold is a minimum temperature at which the aluminum nitride non-superconductor phase and the titanium nitride superconductor phase in the aluminum titanium nitride compound are decomposed.

10. The method of claim 8 , wherein a degree of decomposition after annealing between the aluminum nitride non-superconductor phase and the titanium nitride superconductor phase is directly proportional to the annealing temperature.

11. The method of claim 8 , wherein a degree of decomposition after annealing between the aluminum nitride non-superconductor phase and the titanium nitride superconductor phase is directly proportional to the annealing time.

12. The method of claim 8 , wherein a degree of decomposition after annealing between the aluminum nitride non-superconductor phase and the titanium nitride superconductor phase is inversely proportional to the annealing time.

13. The method of claim 7 , wherein acquiring the annealing control parameter comprises:

acquiring a plurality of candidate control parameters for controlling an annealing operation, wherein under the control of the plurality of candidate control parameters, the inductance element corresponds to a plurality of different kinetic inductances; and

determining the annealing control parameter among the plurality of candidate control parameters to maximize the kinetic inductance of the inductance element.

14. The method of claim 13 , wherein acquiring the plurality of candidate control parameters for controlling the annealing operation comprises:

acquiring an annealing parameter range corresponding to the aluminum nitride non-superconductor phase and the titanium nitride superconductor phase, the annealing parameter range being a parameter range corresponding to spontaneous decomposition between the aluminum nitride non-superconductor phase and the titanium nitride superconductor phase; and

acquiring the plurality of candidate control parameters for controlling the annealing operation within the annealing parameter range.

15. The method of claim 7 , further comprising:

acquiring an execution operation for the annealing control parameter; and

setting the annealing control parameter based on the execution operation.

16. The method of claim 7 , wherein:

the annealing control parameter determines feature information of the decomposed aluminum titanium nitride compound.

17. The method of claim 16 , wherein the feature information of the aluminum titanium nitride compound comprises at least one of a size feature of the aluminum nitride non-superconductor phase, a crystallinity feature of the aluminum nitride non-superconductor phase, or a distribution feature of the aluminum nitride non-superconductor phase.

18. The method of claim 1 , wherein the compound comprises Ti 0.5 Al 0.5 N.

19. The method of claim 1 , wherein the aluminum nitride non-superconductor phase and the titanium nitride superconductor phase comprise at least one identical chemical element.

20. A quantum chip, comprising:

a superconducting circuit, the superconducting circuit including an inductance element, the inductance element comprising an annealed film of an aluminum titanium nitride compound, the annealed film including:

non-superconductor phase portions comprising aluminum nitride; and

superconducting phase portions comprising titanium nitride.

21. The quantum chip of claim 20 , wherein:

the annealed film of the aluminum titanium nitride compound comprises a spinodally decomposed sputtered film of the aluminum titanium nitride compound.

22. The quantum chip of claim 20 , wherein:

the aluminum titanium nitride compound comprises Ti 0.5 Al 0.5 N.

23. The quantum chip of claim 20 , wherein:

a kinetic inductance of the inductance element is greater than a geometric inductance of the inductance element.