Semiconductor device
An semiconductor device includes a first dielectric layer, an etch stop layer, an interconnect structure, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The interconnect structure includes a conductive via in the first dielectric layer and the etch stop layer, a conductive line over the conductive via, an intermediate conductive layer over the conductive line, and a conductive pillar over the intermediate conductive layer. The interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.
1. A device, comprising:
a first dielectric layer;
an etch stop layer over the first dielectric layer;
an interconnect structure, comprising:
a conductive via in the first dielectric layer and the etch stop layer;
a conductive line over the conductive via;
an intermediate conductive layer over the conductive line; and
a conductive pillar over the intermediate conductive layer, wherein the interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via; and
a second dielectric layer surrounding the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.
2. The device of claim 1 , wherein the intermediate conductive layer is in contact with the conductive pillar and the conductive line.
3. The device of claim 1 , wherein the intermediate conductive layer is thinner than the conductive line and the conductive pillar.
4. The device e of claim 1 , wherein the top of the second dielectric layer is higher than a top of the intermediate conductive layer.
5. The device of claim 1 , wherein the top of the second dielectric layer is higher than a bottom of the intermediate conductive layer.
6. The device of claim 1 , further comprising:
a cap layer surrounding the conductive line, the intermediate conductive layer, and the conductive pillar.
7. The device of claim 6 , wherein the cap layer is between the second dielectric layer and the interconnect structure.
8. The device of claim 6 , wherein the cap layer is in contact with the second dielectric layer, the conductive line, the intermediate conductive layer, and the conductive pillar.
9. The device of claim 6 , wherein a top of the cap layer is higher than a top of the intermediate conductive layer.
10. The device of claim 6 , wherein a top of the cap layer is substantially aligned laterally with the top of the second dielectric layer and the top of the conductive pillar.
11. A device, comprising:
a dielectric layer;
a conductive line in the dielectric layer;
an intermediate conductive layer in the dielectric layer and over the conductive line;
a conductive pillar in the dielectric layer and over the intermediate conductive layer, wherein a top surface of the intermediate conductive layer has a first portion covered by the conductive pillar and a second portion free from coverage by the conductive pillar; and
a cap layer in the dielectric layer and extending along sidewalls of the conductive pillar, the second portion of the top surface of the intermediate conductive layer, and sidewalls of the intermediate conductive layer and the conductive line, wherein the dielectric layer has a portion that is lower than a top surface of the conductive pillar and vertically overlaps the second portion of the top surface of the intermediate conductive layer.
12. The device of claim 11 , wherein the first portion of the top surface of the intermediate conductive layer is in contact with the conductive pillar.
13. The device of claim 11 , wherein an obtuse angle is between at least one of the sidewalls of the conductive pillar and the second portion of the top surface of the intermediate conductive layer.
14. The device of claim 11 , wherein the conductive line and the intermediate conductive layer comprise different materials.
15. The device of claim 11 , wherein the conductive line and the conductive pillar comprise the same material.
16. A device, comprising:
a first dielectric layer;
an etch stop layer over the first dielectric layer;
a second dielectric layer over the etch stop layer;
a conductive via in the first dielectric layer and the etch stop layer;
a conductive line in the second dielectric layer and over the conductive via;
an intermediate conductive layer in the second dielectric layer and over the conductive line;
a conductive pillar in the second dielectric layer and over and in contact with the intermediate conductive layer, wherein the conductive pillar is defined by a single piece of material that is continuous throughout, and the intermediate conductive layer extends beyond an entire width of the conductive pillar; and
a cap layer between the second dielectric layer and a combination of the conductive pillar, the intermediate conductive layer, and the conductive line, wherein a top of the cap layer is substantially aligned laterally with a top of the conductive pillar.
17. The device of claim 16 , wherein the top of the cap layer is substantially aligned laterally with a top of the second dielectric layer.
18. The device of claim 16 , wherein the conductive pillar and the conductive via taper in opposite directions.
19. The device of claim 16 , wherein the conductive line is defined by a single piece of material that is continuous throughout.
20. The device of claim 16 , wherein the intermediate conductive layer and the conductive pillar comprise different materials.