Image sensor and manufacturing method thereof

1. An image sensor, comprising:

a substrate, having an active region and a peripheral region next to the active region;

a pixel arranged in the active region and comprising a photosensitive region and a circuitry region next to the photosensitive region;

an isolation structure disposed in the substrate at a first side of the substrate surrounding the photosensitive region, wherein the isolation structure comprises a conductive grid and a dielectric structure covering a sidewall of the conductive grid;

a conductive structure disposed in the substrate within the peripheral region, wherein the conductive grid is electrically connected to the conductive structure; and

an isolation disposed in the substrate under the conductive structure at a second side opposite to the first side of the substrate,

wherein the conductive structure is in contact with the isolation and electrically connecting the conductive grid and a conductive component at the first side of the substrate through the isolations.

2. The image sensor of claim 1 , wherein the isolation structure is overlapped with the circuitry region, and the isolation structure is electrically isolated from the pixel.

3. The image sensor of claim 1 , wherein the dielectric structure further covers a bottom surface of the conductive grid.

4. The image sensor of claim 1 , wherein a material of the conductive grid comprises a metal or a metal alloy.

5. The image sensor of claim 1 , further comprising:

an interconnect disposed along the second side of the substrate,

wherein the conductive structure is disposed through the isolation and electrically connected to a metal line of the interconnect the as conductive component.

6. The image sensor of claim 5 , wherein the conductive grid is separated from the substrate through the dielectric structure.

7. The image sensor of claim 5 , wherein a material of the conductive grid and a material of the conductive structure are identical.

8. The image sensor of claim 5 , wherein the isolation is a shallow trench isolation of dielectric material.

9. The image sensor of claim 1 , further comprising:

a conductive pattern, located on the substrate within the peripheral region, electrically connecting the conductive grid and the conductive structure, wherein the conductive pattern has a lateral surface covering a portion of a top surface of the conductive grid closer to the conductive structure and a top surface of the conductive structure.

10. The image sensor of claim 9 , wherein a material of the conductive structure and a material of the conductive pattern are identical.

11. The image sensor of claim 10 , wherein a material of the conductive grid and the material of the conductive structure are identical.

12. The image sensor of claim 1 , wherein the isolation comprises a doped region spatially and electrically connecting the conductive structure and the conductive component.

13. The image sensor of claim 1 ,

wherein the conductive grid is in a form of solid bulk; and

wherein the conductive structure is in a form of a conformal layer with which a dielectric material is disposed between opposing sidewalls of the conductive structure.

14. A semiconductor device, comprising:

a substrate having a first side and a second side opposite to the first side;

an interconnect, located on the first side;

a plurality of first isolations located in the substrate at the first side and electrically isolated from the interconnect;

a photodiode array, disposed in the substrate within an active region of the substrate and electrically connected to the interconnect;

an isolation structure, extending from the second side of the substrate to a position in the substrate within the active region, wherein the photodiode array is surrounded by and spaced apart from the isolation structure, and the isolation structure comprises a conductive grid; and

a plurality of conductive structures, disposed in the substrate within a peripheral region of the substrate and electrically connected to the interconnect, wherein the conductive grid is electrically connected to the interconnect through the conductive structures and is electrically isolated from the photodiode array,

wherein the conductive structures penetrate through the first isolations for electrically connecting to the interconnect.

15. The semiconductor device of claim 14 , wherein a portion of the isolation structure is located between two adjacent photodiodes of the photodiode array in the substrate within the active region along a direction perpendicular to a stacking direction of the substrate and the interconnect.

16. The semiconductor device of claim 14 , further comprising:

a plurality of second isolations, located in the substrate at the first side and electrically connected to the interconnect, wherein the conductive structures are in contact with the second isolations for electrically connecting to the interconnect, wherein the second isolations comprise doped regions.

17. An image sensor, comprising:

a pixel in a substrate, the pixel comprising a photosensitive region and a circuitry region next to the photosensitive region;

a plurality of doped isolations disposed in the substrate at a first side and an interconnect disposed over the first side of the substrate;

an isolation structure disposed at a second side of the substrate opposite to the first side, the isolation structure comprising a first dielectric structure and a conductive grid on the first dielectric structure filling in a grid mesh cavity over the circuitry region and surrounding the photosensitive region; and

a plurality of conductive structures disposed next to the isolation structure in a plurality of openings at the second side of the substrate, wherein the conductive structures are electrically connected to the conductive grid of the isolation structure, and the isolation structure is electrically isolated from the pixel,

wherein the conductive structures are in contact with the doped isolations for electrically connecting the interconnect and the conductive grid through the doped isolations.

18. The image sensor of claim 17 , further comprising a second dielectric structure disposed in the plurality of openings under the plurality of conductive structures.

19. The image sensor of claim 17 , wherein the plurality of conductive structures extends for electrically connecting the interconnect and the conductive grid.

20. The image sensor of claim 17 ,

wherein the doped isolations comprise stacks of doping regions of the same doping type and different doping concentrations.