V-NAND stacks with dipole regions
A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.
1. A method of forming a memory stack, the method comprising:
depositing a gate metal oxide layer in alternating openings between silicon oxide layers of a memory stack on a substrate having a surface;
preparing a dipole film by exposing the surface of the substrate to a first precursor comprising a dipole metal and optionally to a co-agent comprising nitrogen, oxygen, and/or carbon;
optionally exposing the substrate to a thermal treatment to form the dipole film; and
depositing a metal gate fill layer in the openings, wherein the dipole film is blanket deposited over an entire exposed surface of the gate metal oxide layer, and a subsequent lithography and etch process is used to pattern the dipole film.
2. The method of claim 1 , wherein the dipole film is deposited to a thickness of from 5 Å to 20 Å.
3. The method of claim 1 , wherein the method further comprises a thermal treatment process to diffuse the dipole metal from the dipole film into the gate metal oxide layer.
4. The method of claim 3 , wherein the dipole metal is selected from the group consisting of zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), titanium (Ti), zirconium (Zr), niobium (Nb), and mixtures thereof.
5. A method of forming a memory stack, the method comprising:
depositing a gate metal oxide layer in alternating openings between silicon oxide layers of a memory stack on a substrate having a surface;
preparing a dipole film by exposing the surface of the substrate to a first precursor comprising a dipole metal and optionally to a co-agent comprising nitrogen, oxygen, and/or carbon;
optionally exposing the substrate to a thermal treatment to form the dipole film; and
depositing a metal gate fill layer in the openings, wherein the dipole film is prepared on the gate metal oxide layer and the substrate is exposed to a thermal treatment to diffuse the dipole film into the gate metal oxide layer to form the dipole film and the method further comprises removing any remaining dipole film on the gate metal oxide layer.
6. The method of claim 5 , wherein the dipole metal is selected from the group consisting of zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), titanium (Ti), zirconium (Zr), niobium (Nb), and mixtures thereof.
7. The method of claim 5 , wherein the first precursor comprises a metal halide or a metal organic compound, and/or the co-agent comprises a second compound selected from the group consisting of: NH 3 , N 2 , N 2 H 2 , N 2 H 4 , nitrogen-containing plasma, H 2 O, H 2 O 2 , O 3 , ethanol, methane (CH 4 ), H 2 , and combinations thereof.
8. The method of claim 5 , wherein the dipole metal comprises an electronegativity that is greater than an electronegativity of the metal of the gate metal oxide layer.
9. The method of claim 5 , wherein after the thermal treatment, any portion of the dipole film remaining on the gate metal oxide layer is removed by a dry plasma etch process.
10. The method of claim 5 , wherein the dipole film is prepared using atomic layer deposition at a first substrate temperature in a range of 200° C. to 500° C.
11. The method of claim 10 , wherein the dipole film is blanket deposited over an entire exposed surface of the gate metal oxide layer, and the method further comprises a subsequent lithography and etch process to pattern the dipole film.
12. The method of claim 11 , wherein the dipole film is deposited to a thickness of from 5 Å to 20 Å.
13. The method of claim 5 , wherein the thermal treatment is conducted at a second substrate temperature of at least 700° C.
14. The method of claim 13 , wherein the thermal treatment is performed in a rapid thermal processing (RTP) chamber.
15. The method of claim 14 , wherein the thermal treatment is performed for between about 1 second and about 30 seconds.
16. The method of claim 5 , wherein the gate metal oxide layer is selected from hafnium dioxide (HfO 2 ) and aluminum oxide (Al 2 O 3 ).
17. The method of claim 16 , wherein the gate metal oxide layer is formed using an atomic layer deposition (ALD) process.
18. The method off claim 17 , wherein a metal-containing precursor and an oxygen-containing precursor are alternately deposited to form that gate metal oxide.
19. The method of claim 18 , wherein the gate metal oxide layer has a thickness of between about 20-30 Å.