Semiconductor device
In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
1. A semiconductor device, comprising:
a first gate electrode;
a first insulating film over the first gate electrode;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film;
a metal oxide film over the second insulating film;
a second gate electrode over the metal oxide film; and
a third insulating film over the second gate electrode,
wherein when an electron beam with a probe diameter of 1 nm is incident on the oxide semiconductor film, a plurality of spots are observed at a ring-like region in an electron diffraction pattern of the oxide semiconductor film,
wherein the second gate electrode is in contact with the first gate electrode through an opening in the first insulating film, the second insulating film and the metal oxide film,
wherein the third insulating film is in contact with a top surface and a side surface of the second gate electrode, a side surface of the metal oxide film, a side surface of the second insulating film, and a part of a top surface of the oxide semiconductor film, and
wherein the oxide semiconductor film comprises a channel region overlapping with the second gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film.
2. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises In, Zn, and M, and
wherein M is Al, Ga, Y, or Sn.
3. The semiconductor device according to claim 1 further comprising:
a fourth insulating film over the third insulating film;
a source electrode connected to the source region through an opening in the third insulating film and the fourth insulating film; and
a drain electrode connected to the drain region through an opening in the third insulating film and the fourth insulating film.
4. The semiconductor device according to claim 1 , wherein the metal oxide film comprises a region in contact with the third insulating film.
5. The semiconductor device according to claim 1 , wherein the second insulating film comprises a region in contact with the third insulating film.
6. The semiconductor device according to claim 1 ,
wherein an upper end portion of the second insulating film is positioned outside a lower end portion of the metal oxide film,
wherein an upper end portion of the metal oxide film is positioned outside a lower end portion of the second gate electrode, and
wherein the third insulating film is in contact with a top surface of the metal oxide film.
7. A semiconductor device, comprising:
a first gate electrode;
a first insulating film over the first gate electrode;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film;
a metal oxide film over the second insulating film;
a second gate electrode over the metal oxide film; and
a third insulating film over the second gate electrode,
wherein when an electron beam with a probe diameter of 1 nm is incident on the oxide semiconductor film, a plurality of spots are observed at a ring-like region in an electron diffraction pattern of the oxide semiconductor film,
wherein the second gate electrode is in contact with the first gate electrode through an opening in the first insulating film, the second insulating film and the metal oxide film,
wherein the third insulating film is a nitride film comprising at least one of hydrogen and fluorine,
wherein the third insulating film is in contact with a top surface and a side surface of the second gate electrode, a side surface of the metal oxide film, a side surface of the second insulating film, and a part of a top surface of the oxide semiconductor film, and
wherein the oxide semiconductor film comprises a channel region overlapping with the second gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film.
8. The semiconductor device according to claim 7 ,
wherein the oxide semiconductor film comprises In, Zn, and M, and
wherein M is Al, Ga, Y, or Sn.
9. The semiconductor device according to claim 7 further comprising:
a fourth insulating film over the third insulating film;
a source electrode connected to the source region through an opening in the third insulating film and the fourth insulating film; and
a drain electrode connected to the drain region through an opening in the third insulating film and the fourth insulating film.
10. The semiconductor device according to claim 7 , wherein the metal oxide film comprises a region in contact with the third insulating film.
11. The semiconductor device according to claim 7 , wherein the second insulating film comprises a region in contact with the third insulating film.
12. The semiconductor device according to claim 7 ,
wherein an upper end portion of the second insulating film is positioned outside a lower end portion of the metal oxide film,
wherein an upper end portion of the metal oxide film is positioned outside a lower end portion of the second gate electrode, and
wherein the third insulating film is in contact with a top surface of the metal oxide film.