Display apparatus having flourine at interfaces of semiconductor layer and manufacturing method thereof
An embodiment of a display apparatus includes a substrate, a buffer layer on the substrate, a thin film transistor including a semiconductor layer disposed on the buffer layer and including a silicon semiconductor, and a gate electrode insulated from the semiconductor layer, and an insulating layer covering the semiconductor layer, in which a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.
1. A display apparatus comprising:
a substrate;
a buffer layer on the substrate;
a thin film transistor comprising a semiconductor layer disposed on the buffer layer and comprising a silicon semiconductor, and a gate electrode insulated from the semiconductor layer; and
an insulating layer covering the semiconductor layer,
wherein a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.
2. The display apparatus of claim 1 , wherein a minimum concentration of the fluorine in the first semiconductor layer is no more than 1×10 20 atom/cm 3 .
3. The display apparatus of claim 2 , wherein a concentration of the fluorine at the interface between the semiconductor layer and the buffer layer is greater than a minimum concentration of the fluorine of the semiconductor layer.
4. The display apparatus of claim 1 , wherein the buffer layer comprises a first buffer layer on the substrate, a second buffer layer on the first buffer layer, and a third buffer layer on the second buffer layer, and
a hydrogen concentration of the first buffer layer is greater than a hydrogen concentration of the second buffer layer.
5. The display apparatus of claim 4 , wherein a hydrogen concentration of the first buffer layer is within the range and including 1.1×10 22 atom/cm 3 to 2.0×10 22 atom/cm 3 , and a hydrogen concentration of the second buffer layer is within the range and including 7.0×10 21 atom/cm 3 to 1.0×10 22 atom/cm 3 .
6. The display apparatus of claim 4 , wherein a film density of the first buffer layer is greater than a film density of the second buffer layer.
7. The display apparatus of claim 4 , further comprising a barrier layer disposed between the substrate and the buffer layer and comprising a first layer on the substrate, a second layer on the first layer, and a third layer on the second layer.
8. The display apparatus of claim 7 , wherein the second layer has a surface roughness within the range and including 3 nm to 5 nm.
9. The display apparatus of claim 7 , wherein a hydrogen concentration of the second layer is greater than a hydrogen concentration of the first layer.
10. The display apparatus of claim 9 , wherein the first layer has a first thickness in a direction perpendicular to the substrate, and the third layer has a second thickness in a direction perpendicular to the substrate.
11. The display apparatus of claim 10 , wherein the first thickness and the second thickness each are within the range and including 50 Å to 300 Å.
12. The display apparatus of claim 1 , further comprising:
a second insulating layer covering the gate electrode; and
a second thin film transistor disposed on the second insulating layer and comprising a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer.
13. The display apparatus of claim 12 , wherein the gate electrode and the second gate electrode are arranged on layers different from each other.