Semiconductor radiation source

1. A semiconductor radiation source comprising:

at least one semiconductor chip that generates radiation; and

at least one capacitor body,

wherein

the semiconductor chip and the capacitor body are stacked on top of each other,

the semiconductor chip directly electrically connects in a planar manner to the capacitor body,

the semiconductor chip is a ridge waveguide laser, and

a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body,

wherein the capacitor body has a larger base area than the semiconductor chip and an electrical contact area between the semiconductor chip and the capacitor body is at least 50% of the base area.

2. The semiconductor radiation source according to claim 1 ,

wherein the semiconductor chip and the capacitor body have equal lateral dimensions along each direction with a tolerance of at most 10%, and

an electrical contact area between the semiconductor chip and the capacitor body is at least 80% of a base surface of the semiconductor chip.

3. The semiconductor radiation source according to claim 1 ,

wherein the semiconductor chip and the capacitor body are soldered to each other, and

a main emission direction of the semiconductor chip is parallel to a base surface of the semiconductor chip and a base surface of the capacitor body.

4. The semiconductor radiation source according to claim 1 ,

further comprising a controller having one or more switching elements for pulsed operation of the semiconductor chip,

wherein the controller electrically connects to a side of the semiconductor chip opposite the capacitor body.

5. The semiconductor radiation source according to claim 4 , wherein the controller and the capacitor body are arranged next to each other on a common carrier.

6. The semiconductor radiation source according to claim 4 ,

wherein the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the semiconductor chip is located between the controller and the capacitor body, and

the semiconductor chip is electrically connected directly to the controller and the capacitor body.

7. The semiconductor radiation source according to claim 1 , wherein the capacitor body is monolithically designed as a chip and based on silicon.

8. The semiconductor radiation source according to claim 1 , wherein a direct, planar electrical connection between the semiconductor chip and the capacitor body has an inductance of at most 50 pH.

9. The semiconductor radiation source according to claim 1 ,

wherein the capacitor body has a capacity of at least 20 nF,

the semiconductor radiation source can be surface-mounted, and

a total thickness of the capacitor body together with the semiconductor chip is 0.1 mm to 0.5 mm.

10. The semiconductor radiation source according to claim 1 ,

comprising a plurality of the semiconductor chips that are regularly arranged in a two-dimensional array as seen in plan view,

wherein all of the semiconductor chips are arranged together on a single capacitor body.

11. The semiconductor radiation source according to claim 1 ,

comprising a plurality of the capacitor bodies and a plurality of the semiconductor chips are regularly arranged in a two-dimensional array as seen in plan view,

wherein the semiconductor chips are mounted on the capacitor bodies in a one-to-one manner.

12. The semiconductor radiation source according to claim 1 , wherein the semiconductor radiation source is configured to produce laser pulses with a duration of at most 2 ns.

13. The semiconductor radiation source according to claim 1 , wherein a semiconductor layer sequence extends continuously across the semiconductor chip between the ridge waveguide and the capacitor body.

14. The semiconductor radiation source according to claim 1 , wherein the ridge waveguide is located in a p-conducting side of the semiconductor chip so that an n-conducting side of the semiconductor chip faces the capacitor body.

15. The semiconductor radiation source according to claim 14 , wherein the n-conducting side of the semiconductor chip is directly electrically connected to the capacitor body.