Quantum dot composite and electronic device including the same
A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.
1. A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix,
wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur,
wherein an arithmetic size of the plurality of the quantum dots is greater than or equal to 8.5 nm,
wherein the quantum dot composite is configured to emit red light,
wherein as the quantum dot composite is irradiated with light of a wavelength of from about 450 nanometers to about 470 nanometers for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial brightness thereof.
2. The quantum dot composite of claim 1 , wherein the quantum dot composite exhibits a luminance decrease interval when the quantum dot composite is irradiated with light of a wavelength of from about 450 nanometers to about 470 nanometers is conducted for about 100 hours.
3. The quantum dot composite of claim 1 , wherein the quantum dot composite emits red light with a maximum peak wavelength in a range of greater than or equal to about 600 nanometers to less than or equal to about 650 nanometers.
4. The quantum dot composite of claim 1 , wherein the arithmetic size of the plurality quantum dots is greater than or equal to about 8.8 nanometers and less than about 15 nanometers.
5. The quantum dot composite of claim 1 , wherein the plurality of quantum dots comprise a first quantum dot population with a first arithmetic size, and the first arithmetic size is greater than the arithmetic size of the plurality of quantum dots, and a fraction of the first quantum dot population in the plurality of quantum dots is greater than or equal to about 60 percent.
6. The quantum dot composite of claim 5 , wherein the arithmetic size of the plurality of the quantum dots is greater than or equal to about 8.8 nanometers and the first arithmetic size is greater than or equal to about 9.0 nanometers.
7. The quantum dot composite of claim 5 , wherein a fraction of the first quantum dot population in the plurality of quantum dots is greater than or equal to about 70 percent.
8. The quantum dot composite of claim 1 , wherein the plurality of quantum dots comprise a second quantum dot population with a second arithmetic size, and the second arithmetic size is less than or equal to 7.2 nanometers, and a fraction of the second quantum dot population in the plurality of quantum dots is less than or equal to about 18 percent.
9. The quantum dot composite of claim 1 , wherein a size of the semiconductor nanocrystal core is greater than about 3 nanometers.
10. The quantum dot composite of claim 1 , wherein the semiconductor nanocrystal shell comprises a first layer including a first semiconductor nanocrystal comprising zinc and selenium, and a second layer disposed on the first layer, the second layer comprising a second semi nanocrystal comprising zinc, sulfur, and optionally selenium, wherein a composition of the first semiconductor nanocrystal is different from a composition of the second semiconductor nanocrystal.
11. The quantum dot composite of claim 10 , wherein the first layer has a thickness of greater than or equal to about 1.5 nanometers;
the second layer has a thickness of less than or equal to about 0.7 nanometers; or
the first layer has a thickness of greater than or equal to about 1.5 nanometers and the second layer has a thickness of less than or equal to about 0.7 nanometers.
12. The quantum dot composite of claim 1 , wherein in the plurality of quantum dots, a mole ratio of zinc to indium (Zn:In) is greater than or equal to about 13:1, and a mole ratio of sulfur to selenium (S:Se) is less than or equal to about 0.6:1.
13. The quantum dot composite of claim 1 , wherein in the plurality of quantum dots, a mole ratio of zinc to a sum of sulfur and selenium (Zn:(S+Se)) is less than or equal to about 1.1:1, and a mole ratio of sulfur to selenium (S:Se) is less than or equal to about 0.5:1.
14. The quantum dot composite of claim 1 , wherein the plurality of quantum dots comprises a first quantum dot population with a first arithmetic size and a second arithmetic size, and the first arithmetic size is greater than the arithmetic size of the plurality of quantum dots and the second arithmetic size is less than or equal to about 7.2 nm, and in the plurality of quantum dots, a fraction of the first quantum dot population is greater than 60% and a fraction of the second quantum dot population is less than or equal to about 10%.
15. A color filter comprising a quantum dot composite of claim 1 .
16. A display device comprising a light emitting element, and a light source, wherein the light emitting element includes the quantum dot composite of claim 1 , and the light source is configured to provide the light emitting element with incident light.
17. A composition comprising a plurality of quantum dots, wherein the plurality of quantum dots comprises a first semiconductor nanocrystal comprising indium and phosphorus, and a second semiconductor nanocrystal comprising a zinc chalcogenide, wherein the zinc chalcogenide comprises zinc; and selenium, sulfur, or a combination thereof, wherein an arithmetic size of the plurality of quantum dots is greater than or equal to about 8 nanometers, and the plurality of quantum dots comprises a second quantum dot population having a second arithmetic size, wherein the second arithmetic size is less than or equal to about 7.2 nanometers, and a fraction of the second quantum dots in the plurality of quantum dots is less than or equal to about 18 percent.
18. The composition of claim 17 , wherein the fraction of the second quantum dot population is less than or equal to about 15 percent.
19. The composition of claim 17 , wherein the plurality of quantum dots comprise a first quantum dot population with a first arithmetic size of greater than or equal to 8 nanometers, and a fraction of the first quantum dots in the plurality of quantum dots is greater than or equal to about 60%.
20. The composition of claim 17 , wherein the plurality of quantum dots comprise a first quantum dot population with a first arithmetic size of greater than or equal to 8.5 nanometers, and a fraction of the first quantum dots in the plurality of quantum dots is greater than 80 percent.
21. A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix,
wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur,
wherein
a mole ratio of zinc to indium (Zn:In) is greater than or equal to about 13:1, and a mole ratio of sulfur to selenium (S:Se) is less than or equal to about 0.6:1, or
a mole ratio of zinc to a sum of sulfur and selenium (Zn:(S+Se)) is less than or equal to about 1.1:1, and a mole ratio of sulfur to selenium (S:Se) is less than or equal to about 0.5:1, or each of the respective mole ratios are satisfied,
wherein an arithmetic size of the plurality of the quantum dots is greater than or equal to 8 nm,
wherein the quantum dot composite is configured to emit red light,
wherein as the quantum dot composite is irradiated with light of a wavelength of from about 450 nanometers to about 470 nanometers for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial brightness thereof.
22. The quantum dot composite of claim 21 , wherein the plurality of quantum dots comprises a first quantum dot population with a first arithmetic size and a second quantum dot population with a second arithmetic size, and the first arithmetic size is greater than the arithmetic size of the plurality of quantum dots and the second arithmetic size is less than or equal to about 7.2 nm, and in the plurality of quantum dots, a fraction of the first quantum dot population is greater than 60% and a fraction of the second quantum dot population is less than or equal to about 10%.
23. A display device comprising a light emitting element and a light source, wherein the light emitting element includes the quantum dot composite of claim 21 , and the light source is configured to provide the light emitting element with incident light.