Ternary content addressable memory and decision generation method for the same
A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. Each of the memory cells is coupled to one of the first search lines and one of the second search lines. The current sensing units, coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units.
1. A ternary content addressable memory (TCAM), comprising:
a plurality of first search lines;
a plurality of second search lines;
a plurality of memory cell strings, comprising a plurality of memory cells, each of the memory cells coupled to one of the first search lines and one of the second search lines; and
one or more current sensing units, coupled to the memory cell strings,
wherein in a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units;
wherein the memory cell strings are arranged as a plurality groups, each of the groups of the memory cell strings are coupled to the corresponding current sensing unit through a AND gate.
2. The TCAM according to claim 1 , wherein each of the memory cells comprises:
a first transistor, a first terminal of the first transistor is coupled to the corresponding first search line; and
a second transistor, a first terminal of the second transistor is coupled to the corresponding second search line, a second terminal of the second transistor is coupled to a second terminal of the first transistor, and a third terminal of the second transistor is coupled to a third terminal of the first transistor.
3. The TCAM according to claim 2 , wherein, for each of the memory cells, in a programming operation, when programming a first value, a threshold of the first transistor is programmed to a low threshold voltage and a threshold of the first transistor is programmed to a high threshold voltage, and when programming a second value, the threshold of the first transistor is programmed to the high threshold voltage and the threshold of the first transistor is programmed to the low threshold voltage.
4. The TCAM according to claim 3 , wherein, for each of the memory cells, in the search operation, when the first value is searched, the first searching line is applied a first searching voltage and the second search line is applied a second search voltage, and when the second value is searched, the first searching line is applied the second searching voltage and the second search line is applied the first search voltage, wherein the second searching voltage is higher than the high threshold voltage, the second threshold voltage is high than the first searching voltage, and the first searching voltage is higher that the low threshold voltage.
5. The TCAM according to claim 3 , wherein, for each of the memory cells, in the programming operation, when programming don't care, the threshold voltages of the first transistor and the second transistor are programmed to the low threshold voltage.
6. The TCAM according to claim 4 , wherein, for each of the memory cells, in the search operation, when a wild card is searched, the first search line and the second search line are applied the second searching voltage.
7. The TCAM according to claim 1 , wherein each of the memory cells strings comprises a plurality of transistors serially connected, half of the transistors respectively is a first transistor of each of the memory cells, the other half of the transistors respectively is a second transistors of each of the memory cells, for each of the memory cells,
a first terminal of the first transistor is coupled to the corresponding first search line; and
a first terminal of the second transistor is coupled to the corresponding second search line.
8. The TCAM according to claim 7 , wherein, for each of the memory cells, in a programming operation, when programming a first value, a threshold of the first transistor is programmed to a low threshold voltage and a threshold of the first transistor is programmed to a high threshold voltage, and when programming a second value, the threshold of the first transistor is programmed to the high threshold voltage and the threshold of the first transistor is programmed to the low threshold voltage.
9. The TCAM according to claim 8 , wherein, for each of the memory cells, in the search operation, when the first value is searched, the first searching line is applied a first searching voltage and the second search line is applied a second search voltage, and when the second value is searched, the first searching line is applied the second searching voltage and the second search line is applied the first search voltage, wherein the second searching voltage is higher than the high threshold voltage, the second threshold voltage is high than the first searching voltage, and the first searching voltage is higher that the low threshold voltage.
10. The TCAM according to claim 8 , wherein, for each of the memory cells, in the programming operation, when programming don't care, the threshold voltages of the first transistor and the second transistor are programmed to the low threshold voltage.
11. The TCAM according to claim 9 , wherein, for each of the memory cells, in the search operation, when a wild card is searched, the first search line and the second search line are applied the second searching voltage.
12. The TCAM according to claim 7 , wherein, for each of the memory cell strings, the memory cells are arranged as a plurality of sets, each of the sets comprises two or more memory cells, for each set of the memory cells, in a programming operation, when programming data without don't care, a threshold voltage of one of the transistors of the memory cells is programmed to a secondary state, threshold voltages of the other transistors of the memory cells are programmed to a primary state, wherein the primary state is one of a high threshold voltage and a low threshold voltage, and the secondary state is the other one of the high threshold voltage and the low threshold voltage.
13. A decision generation method for TCAM, comprising:
receiving a target data string;
determining one or more masks, and generating an input data string according to the one or more masks and the target data string;
applying a plurality of searching voltages to a plurality of first search lines and a plurality of second search lines according to the input data string;
generating one or more decision parameters according to a plurality of current values sensed by a plurality of current sensing units sensing the first search lines and the second search lines; and
generated a decision according to the one or more decision parameters;
wherein the first search lines and the second search lines are coupled to a plurality of memory cell strings, the memory cell strings are arranged as a plurality groups, each of the groups of the memory cell strings are coupled to the corresponding current sensing unit through a AND gate.
14. The decision generation method according to claim 13 , further comprising:
determining whether to make the decision according to the one or more decision parameters.
15. A ternary content addressable memory (TCAM), comprising:
a plurality of first search lines;
a plurality of second search lines;
a plurality of memory cell strings, each of the memory cell strings comprising a plurality of memory cells, each of the memory cells coupled to one of the first search lines and one of the second search lines; and
one or more current sensing units, coupled to the memory cell strings,
wherein in a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units;
wherein the plurality of memory cell strings comprises a particular memory cell string, the memory cells of the particular memory cell string are serially connected, each memory cell of the particular memory cell string comprises a first transistor, the first terminal of the first transistor is coupled to a corresponding first search line, the first terminal is a gate of the first transistor;
wherein when the data stored in the particular memory cell strings matches the data string to be searched in the search operation, a particular current flows through the memory cells of the particular memory cell string and a corresponding current sensing unit detects the particular current outputted from the particular memory cell string, or the corresponding current sensing unit detects a magnitude of the particular current.