Granted Patent B2

US 12,424,998 · App. 17/334,542 · Granted Sep 23, 2025

Inventors: Jyothi Swaroop Sadhu (Apopka, FL); Maria Wang (Richardson, TX)

Assignee: Qorvo US, Inc.

H03H9/0211H03H3/02H03H9/02015H03H2003/023H03H2003/025

Abstract

Claims (35)

1. A method of making a piezoelectric device, comprising steps of:

providing a foundation structure;

depositing a first metal over at least first area of a top surface of the foundation structure to form a plurality of metal islands such that the plurality of metal islands self-assemble in a distributed manner over the at least first area of the top surface of the foundation structure; and

depositing piezoelectric material over the at least first area of the top surface of the foundation structure to form a piezoelectric film over the at least the first area of the top surface of the foundation structure, wherein the depositing of piezoelectric material formed over the at least first area of the top surface of the foundation structure to form a piezoelectric film further comprising polarity patterning the piezoelectric film formed into at least one non-piezoelectric portion, wherein polarity patterning the at least one non-piezolectric portion comprises:

forming pillars of the piezoelectric material includes a first polar orientation residing over corresponding ones of the plurality of metal islands; and

forming a mesh of the piezoelectric material includes a second polar orientation, which is opposite to that of the first polar orientation, and surrounding the pillars of the piezoelectric material.

2. The method of claim 1 , wherein the depositing of the piezoelectric material to form the piezoelectric film includes depositing the piezoelectric film formed from the piezoelectric material over the at least first area of the top surface of the foundation structure and the plurality of metal islands.

3. The method of claim 2 further comprising:

forming a bottom electrode over the foundation structure;

depositing a base layer of the piezoelectric material over the bottom electrode, wherein the piezoelectric material in the base layer has the second polar orientation, and the plurality of metal islands are over the base layer; and

forming a top electrode over the at least one non-piezoelectric portion, wherein the at least one non-piezoelectric portion is over the base layer, and the at least one non-piezoelectric portion and the base layer are between the bottom electrode and the top electrode.

4. The method of claim 1 , wherein the depositing of the piezoelectric material to form the piezoelectric film includes depositing the piezoelectric film formed from the piezoelectric material over the at least first area of the top surface of the foundation structure and over a second area of the top surface of the foundation structure.

5. The method of claim 1 , wherein the method further comprises:

depositing the first metal to form additional metal islands that are provided over at least second area of the top surface of the foundation structure to form the additional metal islands, said the additional metal islands formed; and

removing the additional metal islands in the at least second area of the top surface of the foundation structure.

6. The method of claim 5 wherein the depositing of the piezoelectric material to form the piezoelectric film over the at least first area of the top surface of the foundation structure further comprises depositing the piezoelectric film over the at least second area of the top surface of the foundation structure.

7. The method of claim 1 wherein the piezoelectric material is chosen from a compound that includes a metal element and a non-metal element, and the plurality of metal islands consists of the metal element.

8. The method of claim 1 wherein the piezoelectric material is chosen from a compound that includes a metal element and a non-metal element, and the plurality of metal islands are essentially void of the non-metal element.

9. The method of claim 1 further comprising

depositing a bottom electrode over the foundation structure; and

depositing a top electrode over the bottom electrode such that an active region comprises at least one piezoelectric portion is in the active region between the bottom electrode and the top electrode.

10. The method of claim 9 wherein the bottom electrode, the at least one non-piezoelectric portion, and the top electrode are deposited such that the at least one non-piezoelectric portion is in an outside region at least partially surrounding the active region.

11. The method of claim 1

further comprising depositing a base layer of the piezoelectric material;

wherein the at least one non-piezoelectric portion is deposited such that the base layer is between the at least one non-piezoelectric portion and the foundation structure, the plurality of metal islands over and directly on the base layer.

12. The method of claim 1 further comprising:

forming a first bottom electrode over the foundation structure;

depositing a first top electrode over the first bottom electrode

depositing a top electrode such that the at least one piezoelectric portion is between the first bottom electrode and the first top electrode;

forming a second bottom electrode over the foundation structure;

depositing a base layer of the piezoelectric material over the second bottom electrode, the base layer having the second polar orientation, and the plurality of metal islands are on the base layer; and

depositing a second top electrode over the base layer such that the at least one non-piezoelectric portion and the base layer are between the second bottom electrode and the second top electrode.

13. The method of claim 12 wherein:

the first bottom electrode and the first top electrode form part of a first transducer for a first bulk acoustic wave resonator; and

the second bottom electrode and the second top electrode form part of a second transducer for a second bulk acoustic wave resonator.

Assignments (1)

Continuity (3)

References Cited (11)