Contiguous shield structures in microelectronic assemblies having hybrid bonding
Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, embedded in a first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a first magnetic conductive material; and a second microelectronic component, embedded in a second dielectric layer on the first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a second magnetic conductive material, wherein the second microelectronic component is coupled to the surface of the first microelectronic component by a hybrid bonding region, and wherein the second magnetic conductive material is coupled to the first magnetic conductive material.
1. A microelectronic assembly, comprising:
a first microelectronic component, embedded in a first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a first magnetic conductive material; and
a second microelectronic component, embedded in a second dielectric layer on the first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a second magnetic conductive material, wherein the second microelectronic component is coupled to the surface of the first microelectronic component by a hybrid bonding region, and wherein the second magnetic conductive material is coupled to the first magnetic conductive material.
2. The microelectronic assembly of claim 1 , wherein the first magnetic conductive material and the second magnetic conductive material comprise at least one of manganese, iron, cobalt, molybdenum, nickel, copper, vanadium, indium, aluminum, gallium, silicon, germanium, tin, and/or antimony.
3. The microelectronic assembly of claim 1 , wherein a portion of the one or more side surfaces at least partially encapsulated by the second magnetic conductive material is coupled to a portion of the surface at least partially encapsulated by the first magnetic conductive material.
4. The microelectronic assembly of claim 1 , wherein a portion of the surface at least partially encapsulated by the second magnetic conductive material is coupled to a portion of the surface at least partially encapsulated by the first magnetic conductive material.
5. The microelectronic assembly of claim 1 , wherein the second microelectronic component includes one or more of an inductor, a capacitor, an antenna, a coil, and a voltage regulator.
6. The microelectronic assembly of claim 5 , wherein the first microelectronic component includes one or more of an inductor, a capacitor, an antenna, a coil, and a voltage regulator.
7. The microelectronic assembly of claim 1 , wherein the hybrid bonding region is first hybrid bonding region, and further comprising:
a third microelectronic component embedded in the second dielectric layer and coupled to the surface of the first microelectronic component by a second hybrid bonding region.
8. The microelectronic assembly of claim 7 , wherein the third microelectronic component further includes a surface and one or more side surfaces at least partially encapsulated by a third magnetic conductive material, wherein the third magnetic conductive material is coupled to the first magnetic conductive material.
9. The microelectronic assembly of claim 1 , further comprising:
a transmission line in the first dielectric layer, wherein the transmission line is within a footprint of the second microelectronic component.
10. A microelectronic assembly, comprising:
a first microelectronic component in a first dielectric layer, having a first surface, an opposing second surface, and one or more side surfaces, including a first magnetic conductive material at least partially encapsulating the second surface and the one or more side surfaces; and
a second microelectronic component in a second dielectric layer on the first dielectric layer, having a first surface, an opposing second surface, and one or more side surfaces, including a second magnetic conductive material at least partially encapsulating the second surface and the one or more side surfaces, wherein the first surface of second microelectronic component is coupled to the second surface of the first microelectronic component by a hybrid bonding region, and wherein the second magnetic conductive material is hybrid bonded to the first magnetic conductive material.
11. The microelectronic assembly of claim 10 , wherein the first magnetic conductive material and the second magnetic conductive material comprise at least one of manganese, iron, cobalt, molybdenum, nickel, copper, vanadium, indium, aluminum, gallium, silicon, germanium, tin, and/or antimony.
12. The microelectronic assembly of claim 10 , wherein a portion of the one or more side surfaces at least partially encapsulated by the second magnetic conductive material is coupled to a portion of the second surface at least partially encapsulated by the first magnetic conductive material.
13. The microelectronic assembly of claim 10 , wherein a portion of the surface at least partially encapsulated by the second magnetic conductive material is coupled to a portion of the surface at least partially encapsulated by the first magnetic conductive material.
14. The microelectronic assembly of claim 10 , wherein the second microelectronic component includes one or more of an inductor, a capacitor, an antenna, a coil, and a voltage regulator.
15. The microelectronic assembly of claim 14 , wherein the first microelectronic component includes one or more of an inductor, a capacitor, an antenna, a coil, and a voltage regulator.
16. The microelectronic assembly of claim 10 , wherein the second microelectronic component is a radio frequency die.