IP Library Granted Patent US 12,339,742
Granted Patent B2
US 12,339,742 · App. 17/342,993 · Granted Jun 24, 2025

Soft read operations with progressive data output

Inventors: Ali Khakifirooz (Brookline, MA); George Kalwitz (Mead, CO); Anand Ramalingam (Portland, OR); Ravi Motwani (Fremont, CA); Renjie Chen (Santa Clara, CA)
G06F11/1068G06F11/1012G11C11/5642G11C16/0483G11C16/26H03M13/458
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Quick Facts
Patent No.
US 12,339,742
App. No.
17/342,993
Granted
Jun 24, 2025
Kind
B2
Abstract

Systems, apparatuses and methods may provide for memory controller technology including first logic to trigger, via an initial request, a hard-read and a soft-read, wherein the hard-read is to generate hard-bit information and the soft-read is to generate first soft-bit information and second soft-bit information, conduct a first error correction on the hard-bit information, and issue a subsequent request for at least the second soft-bit information if the first error correction is unsuccessful. Additionally, memory device technology may include a plurality of memory cells and second logic to conduct the hard-read and the soft-read from a memory cell in the plurality of memory cells in response to the initial request, send the hard-bit information to the controller, and withhold at least the second soft-bit information from the controller until the subsequent request is received.

Claims (42)

1. A memory device comprising:

a plurality of memory cells; and

logic coupled to one or more substrates, the logic to:

conduct a hard-read and a soft-read from a memory cell in the plurality of memory cells in response to an initial request from a controller, wherein the hard-read is to generate hard-bit information and the soft-read is to generate first soft-bit information and second soft-bit information;

send the hard-bit information to the controller;

send the first soft-bit information with the hard-bit information to the controller while withholding at least the second soft-bit information from the controller;

detect a subsequent request from the controller; and

send the second soft-bit information to the controller in response to the subsequent request.

2. The memory device of claim 1 , wherein the soft-read is to be one or more of a 5-strobe soft-read or a 7-strobe soft-read.

3. The memory device of claim 1 , wherein the logic is further to store at least the second soft-bit information locally on the memory device while the hard-bit information is being processed by the controller.

4. The memory device of claim 1 , wherein the hard-bit information is to be sent to the controller via a shared bus.

5. The memory device of claim 1 , wherein to conduct the hard-read and the soft-read, the logic is further to:

maintain a voltage of a wordline associated with the memory cell at a read voltage level; and

compare a current of a bitline associated with the memory cell to a plurality of reference current levels.

6. A memory chip controller comprising:

one or more substrates; and

logic coupled to the one or more substrates, wherein the logic is implemented at least partly in one or more of configurable or fixed-functionality hardware logic, the logic coupled to the one or more substrates to:

trigger, via an initial request, a hard-read and a soft-read with respect to a memory cell in a memory device, wherein the hard-read is to generate hard-bit information and the soft-read is to generate first soft-bit information and second soft-bit information;

conduct a first error correction on the hard-bit information; and

issue a subsequent request for at least the second soft-bit information if the first error correction is unsuccessful.

7. The memory chip controller of claim 6 , wherein the logic coupled to the one or more substrates is further to conduct a second error correction on the hard-bit information, the first soft-bit information, and the second soft-bit information.

8. The memory chip controller of claim 7 , wherein the logic coupled to the one or more substrates is further to obtain the hard-bit information, the first soft-bit information, and the second soft-bit information from a shared bus.

9. The memory chip controller of claim 6 , wherein the logic coupled to the one or more substrates is further to exclude the second soft-bit information from the first error correction.

10. The memory chip controller of claim 6 , wherein the first error correction is conducted further on the first soft-bit information.

11. The memory chip controller of claim 6 , wherein the soft-read is to be one or more of a 5-strobe soft-read or a 7-strobe soft-read.

12. The memory chip controller of claim 6 , wherein the logic coupled to the one or more substrates is to store the hard-bit information locally on the controller until at least the second soft-bit information is received from the memory device.

13. A computing system comprising:

a memory chip controller including first logic to:

trigger, via an initial request, a hard-read and a soft-read, wherein the hard-read is to generate hard-bit information and the soft-read is to generate first soft-bit information and second soft-bit information,

conduct a first error correction on the hard-bit information, and

issue a subsequent request for at least the second soft-bit information if the first error correction is unsuccessful; and

a memory device including a plurality of memory cells and second logic to:

conduct the hard-read and the soft-read from a memory cell in the plurality of memory cells in response to the initial request,

send the hard-bit information to the controller; and

withhold at least the second soft-bit information from the controller until the subsequent request is received.

14. The computing system of claim 13 , wherein the first logic is to conduct a second error correction on the hard-bit information, the first soft-bit information, and the second soft-bit information.

15. The computing system of claim 13 , wherein the first logic is to obtain the hard-bit information, the first soft-bit information, and the second soft-bit information from a shared bus.

16. The computing system of claim 13 , wherein the first error correction is conducted further on the first soft-bit information.

17. The computing system of claim 13 , wherein to conduct the hard-read and the soft-read, the second logic is further to:

maintain a voltage of a wordline associated with the memory cell at a read voltage level, and

compare a current of a bitline associated with the memory cell to a plurality of reference current levels.

18. The computing system of claim 13 , wherein the soft-read is to be one or more of a 5-strobe soft-read or a 7-strobe soft-read.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2025
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP. (DBA SOLIDIGM)
Reel/Frame 072549/0289 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2021
From: KHAKIFIROOZ, ALI; KALWITZ, GEORGE; RAMALINGAM, ANAND; MOTWANI, RAVI; CHEN, RENJIE
To: INTEL CORPORATION
Reel/Frame 057574/0602 →
Continuity (1)
Related Publication 20210294698A1 · Sep 23, 2021
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US 12,586,657