Semiconductor device and corresponding method of manufacture

1. A method of making a device, comprising:

attaching a semiconductor chip to a chip mounting portion on at least one leadframe portion, and attaching a passive component on a passive component mounting portion of the at least one leadframe portion;

forming a laser direct structuring (LDS) activatable molding material over the semiconductor chip, the passive component, and the at least one leadframe portion;

forming desired patterns of structured areas within the LDS activatable molding material by activating the LDS activatable molding material;

metallizing the desired patterns of structured areas to form conductive areas within the LDS activatable molding material to thereby form electrical connection between the semiconductor chip and the passive component; and

forming a passivation layer on the LDS activatable molding material.

2. The method of claim 1 , wherein the semiconductor chip is attached to the chip mounting portion such that a longitudinal axis of the passive component is transverse to the passive component mounting portion.

3. The method of claim 1 , wherein the at least one leadframe portion comprises first and second leadframe portions; wherein attaching the semiconductor chip comprises attaching the semiconductor chip to a chip mounting portion on the first leadframe portion; and wherein attaching the passive component comprises attaching the passive component to a passive component mounting portion on the first leadframe portion.

4. The method of claim 1 , wherein the at least one leadframe portion comprises first and second leadframe portions; wherein attaching the semiconductor chip comprises attaching the semiconductor chip to a chip mounting portion on the first leadframe portion; and wherein attaching the passive component comprises attaching the passive component to a passive component mounting portion on the second leadframe portion.

5. The method of claim 1 , further comprising attaching a second semiconductor chip to a second chip mounting portion on at least one additional leadframe portion, and attaching a second passive component on a passive component mounting portion of the at least one additional leadframe portion; wherein forming the LDS activatable molding material comprises forming the LDS activatable molding material over the semiconductor chip, the second semiconductor chip, the passive component, the second passive component, and the at least one leadframe portion; and wherein forming the desired patterns of structured areas within the LDS activatable molding material comprises forming the desired patterns of structured areas within the LDS activatable molding material and wherein metallizing comprises metallizing the desired patterns of structured areas to form conductive areas within the LDS activatable molding material to thereby form electrical connections between the semiconductor chip and the passive component, and between the second semiconductor chip and the second passive component.

6. The method of claim 5 , wherein the at least one leadframe portion comprises first and second leadframe portions; wherein attaching the semiconductor chip comprises attaching the semiconductor chip to a chip mounting portion on the first leadframe portion; wherein attaching the second semiconductor chip comprises attaching the second semiconductor chip to a second chip mounting portion on the second leadframe portion; wherein attaching the passive component comprises attaching the passive component to a passive component mounting portion on the first leadframe portion; and wherein attaching the second passive component comprises attaching the second passive component to a second passive component mounting portion on the second leadframe portion.

7. The method of claim 6 , further comprising singulating the device into:

a first device comprised of the first leadframe portion, the semiconductor chip, the passive component, and corresponding portions of the LDS activatable molding material and passivation layer; and

a second device comprised of the second leadframe portion, the second semiconductor chip, the second passive component, and corresponding portions of the LDS activatable molding material and passivation layer.

8. The method of claim 1 , wherein metallizing the desired patterns of structured areas within the LDS activatable molding material comprises performing an electroless deposition on the desired patterns of structured areas to thereby form a thin pattern, and then performing an electrodeposition to thicken the pattern to thereby form the conductive areas within the LDS activatable molding material.

9. A method of forming a semiconductor device, comprising:

attaching a first semiconductor chip to a chip mounting portion of a leadframe;

securing a first passive component to a first passive component mounting portion of the leadframe;

forming an LDS activatable molding material over the first semiconductor chip, the first passive component, and the leadframe;

activating selected areas of the LDS activatable molding material with laser energy to form structured areas;

metallizing the structured areas within the LDS activatable molding material to create conductive paths that electrically connect the first semiconductor chip and the first passive component; and

applying a passivation layer over the LDS activatable molding material to protect the created electrical connections.

10. The method of claim 9 , further comprising:

performing an electroless deposition process on the activated selected areas within the LDS activatable molding material to form a thin conductive pattern; and

subsequently performing an electrodeposition process on the thin conductive pattern to increase thickness of the conductive paths within the LDS activatable molding material, thereby completing the creation of the electrical connections between the first semiconductor chip and the first passive component.

11. The method of claim 9 , wherein attaching the first semiconductor chip to the chip mounting portion is performed such that a longitudinal axis of the first passive component is arranged to be transverse to the first passive component mounting portion, allowing for the first passive component to extend perpendicular to a major surface of the chip mounting portion.

12. The method of claim 9 , wherein the leadframe includes a first leadframe portion and a second leadframe portion, and wherein attaching the first semiconductor chip to the chip mounting portion comprises securing the first semiconductor chip to the chip mounting portion on the first leadframe portion, and attaching the first passive component comprises securing the first passive component to the passive component mounting portion also on the first leadframe portion, thereby integrating both the first semiconductor chip and the first passive component on a same leadframe portion.

13. The method of claim 9 , wherein the leadframe includes a first leadframe portion and a second leadframe portion, attaching the first semiconductor chip to the chip mounting portion includes securing the first semiconductor chip to the chip mounting portion on the first leadframe portion, and attaching the first passive component includes securing the first passive component to a passive component mounting portion on the second leadframe portion, thus spatially segregating the first semiconductor chip and the first passive component on distinct leadframe portions.