Integrated high efficiency transistor cooling

1. A microfabrication device comprising:

a transistor plane formed on a substrate, the transistor plane including a plurality of field effect transistors;

fluidic passages formed within the transistor plane, wherein the formation of the fluidic passages includes removing at least a portion of solid-state dielectric materials surrounding the plurality of field effect transistors;

a dielectric fluid added to the fluidic passages; and

a circulating mechanism configured to circulate the dielectric fluid through the transistor plane.

2. The microfabrication device of claim 1 , wherein the solid-state dielectric materials are silicon oxide or silicon nitride.

3. The microfabrication device of claim 2 , wherein the removing the at least a portion of solid-state dielectric materials includes etching the portion of solid-state dielectric materials through one or more access shafts.

4. The microfabrication device of claim 3 , wherein the formation of the fluidic passages further includes closing the one or more access shafts after removing the at least a portion of solid-state dielectric materials.

5. A microfabrication device comprising:

a package structure on an array of semiconductor devices on a substrate;

first set of fluidic passages formed between the package and the array of semiconductor devices on the substrate;

second set of fluidic passages formed between cavities within the array of semiconductor devices, wherein the second set of fluidic passages have been formed from removal of at least a portion of solid-state dielectric materials surrounding the array of semiconductor devices;

dielectric fluid added to the first set of fluidic passages and the second set of fluidic passages; and

a circulating mechanism configured to circulate the dielectric fluid through the first set of fluidic passages and the second set of fluidic passages to transfer heat.