Light emitting diode

1. A light emitting diode comprising:

an active layer;

a first type semiconductor layer and a second type semiconductor layer disposed on two opposite sides of the active layer respectively, wherein the second type semiconductor layer has a roughened upper surface;

a first contact pad located on the first type semiconductor layer;

a second contact pad located on the second type semiconductor layer; and

a pick-up layer in direct contact with the roughened upper surface of the second type semiconductor layer, and has a patterned outer surface to serve as a grabbed surface during transferring,

wherein both the first and second contact pads are disposed on one side of the second type semiconductor layer, and the pick-up layer is disposed on another side of the second type semiconductor layer that is opposite to the side on which the first and second contact pads are disposed.

2. The light emitting diode of claim 1 , wherein the pick-up layer is configured to be transmitted by light beams emitted by the active layer.

3. The light emitting diode of claim 1 , wherein the pick-up layer comprises materials that are configured to be dissociated by a laser beam.

4. The light emitting diode of claim 1 , wherein the pick-up layer comprises organic materials.

5. The light emitting diode of claim 4 , wherein the organic materials comprise benzocyclobutene.

6. The light emitting diode of claim 1 , wherein the pick-up layer comprises photosensitive polymer material.

7. The light emitting diode of claim 1 , wherein the patterned outer surface is a uniformly patterned surface.

8. The light emitting diode of claim 1 , wherein the roughened upper surface is an irregularly roughened surface.