Thin film obscurant for microelectronics
Methods and apparatus for an assembly having a first wafer including bulk material and a layer having microelectronics and a wafer with a deposited thin film which is bonded to the first wafer such that the reflected film is embedded within the composed assembly. The reflector wafer can include a handle wafer and a thin film having reflectance characteristics to prevent imaging of the microelectronics via light through the bulk material.
1. An assembly, comprising:
a first wafer including bulk material and a layer having microelectronics;
an oxide layer; and
a reflector wafer bonded to the first wafer, wherein the reflector wafer comprises a thin film having reflectance characteristics to prevent imaging of the microelectronics via light through the bulk material,
wherein the assembly includes, in order, the thin film, the oxide layer, the bulk material, and the layer of microelectronics,
wherein the thin film comprises a first layer of hafnium dioxide on a side of the thin film contacting air, and
wherein the thin film further comprises at least one layer of polysilicon and at least one layer of silicon dioxide.
2. The assembly according to claim 1 , wherein the first wafer comprises a readout integrated circuit.
3. The assembly according to claim 1 , wherein the first wafer further comprises a second oxide layer.
4. The assembly according to claim 1 , wherein the light comprises light in the infrared spectrum.
5. The assembly according to claim 1 , wherein the bulk material comprises silicon.
6. The assembly according to claim 5 , wherein the silicon comprises crystalline silicon.
7. The assembly according to claim 1 , wherein the thin film further comprises titanium oxide.
8. The assembly according to claim 1 , wherein the thin film comprises a Bragg reflector.
9. The assembly according to claim 1 , wherein the first wafer comprises at least one of sapphire or silicon carbide.
10. The assembly according to claim 1 , wherein the thin film is deposited.
11. The assembly according to claim 1 , wherein the thin film further comprises layers of silicon oxide disposed among the at least one layer of polysilicon and the at least one layer of silicon dioxide.
12. The assembly according to claim 1 , further comprising a second layer of hafnium dioxide disposed between one of the at least one layer of polysilicon and one of the at least one layer of silicon dioxide.
13. A method, comprising:
forming microelectronics in a layer of a first wafer that includes a bulk material;
forming an oxide layer on the first wafer; and
bonding a reflector wafer to the first wafer, wherein the reflector wafer comprises a thin film having reflectance characteristics to prevent imaging of the microelectronics via light through the bulk material,
wherein an assembly includes, in order, the thin film, the oxide layer, the bulk material, and the layer of microelectronics,
wherein the thin film comprises a first layer of hafnium dioxide on a side of the thin film contacting air, and
wherein the thin film further comprises at least one layer of polysilicon and at least one layer of silicon dioxide.
14. The method according to claim 13 , wherein the first wafer comprises a readout integrated circuit.
15. The method according to claim 13 , wherein the first wafer further comprises a second oxide layer.
16. The method according to claim 13 , wherein the light comprises light in the infrared spectrum.
17. The method according to claim 13 , wherein the bulk material comprises silicon.
18. The method according to claim 17 , wherein the silicon comprises crystalline silicon.
19. The method according to claim 13 , wherein the thin film comprises a Bragg reflector.
20. The method of claim 13 , further comprising:
forming the thin film using Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), sputtering, or Atomic Layer deposition (ALD).