Semiconductor devices and methods of manufacturing
Semiconductor devices and methods of manufactured are presented in which a first redistribution structure is formed, semiconductor devices are bonded to the first redistribution structure, and the semiconductor devices are encapsulated in an encapsulant. First openings are formed within the encapsulant, such as along corners of the encapsulant, in order to help relieve stress and reduce cracks.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a redistribution structure;
attaching a first semiconductor die to the redistribution structure; and
encapsulating the first semiconductor die with an encapsulant, wherein after the encapsulating the first semiconductor die the encapsulant has a first opening extending into the encapsulant a first distance from a first surface, the first distance being less than a height of the encapsulant, the first surface being planar with the first semiconductor die, a bottom surface of the first opening being the encapsulant, wherein the first opening has a “C” shape.
2. The method of claim 1 , further comprising bonding the redistribution structure to a package substrate.
3. The method of claim 1 , wherein the encapsulating the first semiconductor die further comprises:
applying the encapsulant around the first semiconductor die; and
forming the first opening after the applying the encapsulant has been completed.
4. The method of claim 3 , wherein the forming the first opening comprises directing a laser beam at the encapsulant.
5. The method of claim 3 , further comprising thinning the encapsulant prior to the forming the first opening.
6. The method of claim 1 , wherein the encapsulating the first semiconductor die with the encapsulant comprises placing the encapsulant around a first extension, the first extension in a shape of the first opening.
7. A method of manufacturing a semiconductor device, the method comprising:
bonding a first semiconductor die to a first redistribution layer;
bonding a second semiconductor die to the first redistribution layer;
encapsulating the first semiconductor die and the second semiconductor die with an encapsulant;
forming a plurality of openings along respective corners of the encapsulant, wherein each wall of the plurality of openings is the encapsulant; and
at least partially filling at least one of the plurality of the openings with a first material.
8. The method of claim 7 , wherein the first material is softer than the encapsulant.
9. The method of claim 7 , wherein the forming the plurality of openings is performed at least in part by irradiating the encapsulant with a laser.
10. The method of claim 9 , wherein the irradiating the encapsulant is performed after a thinning of the encapsulant.
11. The method of claim 9 , wherein the irradiating the encapsulant occurs after the first redistribution layer is bonded to a package substrate.
12. The method of claim 7 , wherein at least one of the plurality of openings has an “H” shape.
13. A method of manufacturing a semiconductor device, the method comprising:
forming a redistribution structure;
bonding a first semiconductor die to the redistribution structure;
bonding a second semiconductor die to the redistribution structure;
placing an encapsulant surrounding the first semiconductor die and the second semiconductor die, the encapsulant having a first surface that is coplanar with the first semiconductor die and the second semiconductor die; and
forming a first opening extending partially into the encapsulant from the first surface, the first opening being located between the first semiconductor die and a sidewall of the encapsulant, a bottom of the first opening being the encapsulant, wherein the forming the first opening comprises placing the encapsulant around a first extension, the first extension in a shape of the first opening.
14. The method of claim 13 , further comprising filling the first opening with a first material, the first material being softer than the encapsulant.
15. The method of claim 13 , wherein the first opening is in a shape of a “C”.
16. The method of claim 13 , wherein the first opening is in a shape of a “H”.
17. The method of claim 13 , wherein the first opening is in a shape of a triangle.
18. The method of claim 13 , further comprising bonding a package substrate to the redistribution structure.
19. The method of claim 7 , wherein the forming a plurality of openings comprises placing the encapsulant around a first extension, the first extension in a shape of the plurality of openings.
20. The method of claim 7 , wherein at least one of the plurality of openings has a shape of a triangle.