Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a stacked layer body including conductive and insulating layers alternately stacked in a first direction, partition structures each extending in first and second directions in the stacked layer body, and an intermediate structure extending from an upper end and terminating at a position between upper and lower ends of the stacked layer body between adjacent partition structures. The partition structures include a first partition structure including first and second portions arranged in the second direction, the first portion extends from the upper end to the lower end, and the second portion is located between adjacent first portions, extends from the upper end and terminates at the position between the upper and lower ends.
1. A semiconductor memory device comprising:
a stacked layer body including a structure in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked in a first direction;
a plurality of pillar structures each including a semiconductor layer extending in the first direction through the stacked layer body; and
a plurality of partition structures each extending in the first direction and a second direction intersecting the first direction in the stacked layer body, and partitioning the plurality of pillar structures into a plurality of groups in a third direction intersecting the first and second directions,
wherein
the partition structures include a first partition structure including at least two first portions and at least one second portion arranged in the second direction, the second portion being located between the first portions adjacent to each other in the second direction,
each of the first portions includes a first conductive portion extending in the first direction from one end in the first direction to another end in the first direction of the stacked layer body,
the second portion extends in the first direction from the one end of the stacked layer body and terminates at a position between the one end and the other end of the stacked layer body,
a total length of the at least two first portions in the second direction is longer than a total length of the at least one second portion in the second direction,
a width of one of the at least one second portion in the third direction is smaller than a width of one of the at least two first portions in the third direction,
a plurality of the conductive layers which are located on a side of the other end of the stacked layer body with respect to the position between the one end and the other end of the stacked layer body overlap the second portion in the first direction, and
each of the overlapped portions of the conductive layers extends continuously in the second direction from one of two first portions to another one of the two first portions, the two first portions being adjacent to each other in the second direction via the second portion.
2. The device of claim 1 , wherein
the second portion is formed of an insulating material.
3. The device of claim 1 , wherein
the second portion divides a predetermined number of the conductive layers in the third direction, and
the predetermined number of the conductive layers are used as gate electrodes of select transistors of a NAND string.
4. The device of claim 1 , further comprising:
a semiconductor portion on which the stacked layer body is provided,
wherein the first conductive portion is connected to the semiconductor portion.
5. The device of claim 1 , further comprising:
a wiring overlapping the first partition structure as viewed from the first direction, the wiring electrically connecting the first portions adjacent to each other in the second direction with each other.
6. The device of claim 1 , wherein
the partition structures further include a second partition structure which is adjacent to an extending portion in the third direction, the extending portion including the at least two first portions and the at least one second portion in the first partition structure, and
the second partition structure includes a second conductive portion extending in the first direction from the one end to the other end of the stacked layer body wholly in the second direction along the extending portion of the first partition structure.
7. A semiconductor memory device comprising:
a stacked layer body including a structure in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked in a first direction;
a plurality of pillar structures each including a semiconductor layer extending in the first direction through the stacked layer body; and
a plurality of partition structures each extending in the first direction and a second direction intersecting the first direction in the stacked layer body, and partitioning the plurality of pillar structures into a plurality of groups in a third direction intersecting the first and second directions,
wherein
the partition structures include a first partition structure including at least two first portions and at least one second portion arranged in the second direction, the second portion being located between the first portions adjacent to each other in the second direction,
each of the first portions includes a first conductive portion extending in the first direction from one end in the first direction to another end in the first direction of the stacked layer body,
the second portion extends in the first direction from the one end of the stacked layer body and terminates at a position between the one end and the other end of the stacked layer body, and
the device further comprises a wiring overlapping the first partition structure as viewed from the first direction, the wiring electrically connecting the first portions adjacent to each other in the second direction with each other.
8. The device of claim 7 , wherein
the second portion is formed of an insulating material.
9. The device of claim 7 , wherein
the second portion divides a predetermined number of the conductive layers in the third direction, and
the predetermined number of the conductive layers are used as gate electrodes of select transistors of a NAND string.
10. The device of claim 7 , further comprising:
a semiconductor portion on which the stacked layer body is provided,
wherein the first conductive portion is connected to the semiconductor portion.
11. The device of claim 7 , wherein
the partition structures further include a second partition structure which is adjacent to an extending portion in the third direction, the extending portion including the at least two first portions and the at least one second portion in the first partition structure, and
the second partition structure includes a second conductive portion extending in the first direction from the one end to the other end of the stacked layer body wholly in the second direction along the extending portion of the first partition structure.
12. The device of claim 11 , wherein
the wiring further electrically connects the first portions with the second partition structure.
13. A semiconductor memory device comprising:
a stacked layer body including a structure in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked in a first direction;
a plurality of pillar structures each including a semiconductor layer extending in the first direction through the stacked layer body;
a plurality of partition structures each extending in the first direction and a second direction intersecting the first direction in the stacked layer body, and partitioning the plurality of pillar structures into a plurality of groups in a third direction intersecting the first and second directions; and
an intermediate structure provided between the partition structures adjacent to each other in the third direction, the intermediate structure extending in the first direction from one end in the first direction of the stacked layer body and terminating at a position between the one end and another end in the first direction of the stacked layer body,
wherein
the partition structures include a first partition structure including at least two first portions and at least one second portion arranged in the second direction, the second portion being located between the first portions adjacent to each other in the second direction,
each of the first portions extends in the first direction from the one end to the other end of the stacked layer body,
the second portion extends in the first direction from the one end of the stacked layer body and terminates at the position between the one end and the other end of the stacked layer body,
the second portion divides a predetermined number of the conductive layers in the third direction,
the intermediate structure divides a same number of the conductive layers in the third direction as the predetermined number of the conductive layers divided by the second portion,
the predetermined number is two or more,
a plurality of the conductive layers which are located on a side of the other end of the stacked layer body with respect to the position between the one end and the other end of the stacked layer body overlap the second portion in the first direction, and
each of the overlapped portions of the conductive layers extends continuously in the second direction from one of two first portions to another one of the two first portions, the two first portions being adjacent to each other in the second direction via the second portion.
14. The device of claim 13 , wherein
the second portion is formed of a same material as a material of the intermediate structure.
15. The device of claim 13 , wherein
the second portion is formed of an insulating material.
16. The device of claim 13 , wherein
the predetermined number of the conductive layers are used as gate electrodes of select transistors of a NAND string.
17. The device of claim 13 , wherein
a total length of the at least two first portions in the second direction is longer than a total length of the at least one second portion in the second direction.
18. The device of claim 13 , wherein
a width of one of the at least one second portion in the third direction is smaller than a width of one of the at least two first portions in the third direction.
19. The device of claim 13 , wherein
each of the first portions includes a first conductive portion extending from the one end to the other end of the stacked layer body.
20. The device of claim 19 , wherein
the partition structures further include a second partition structure which is adjacent to an extending portion in the third direction via the intermediate structure, the extending portion including the at least two first portions and the at least one second portion in the first partition structure, and
the second partition structure includes a second conductive portion extending in the first direction from the one end to the other end of the stacked layer body wholly in the second direction along the extending portion of the first partition structure.