IP Library Granted Patent US 11,916,470
Granted Patent B2
US 11,916,470 · App. 17/349,687 · Granted Feb 27, 2024

Gate driving technique to lower switch on-resistance in switching converter applications

Inventors: Taewoo Kwak (San Diego, CA); Joseph Dale Rutkowski (Chandler, AZ); Sugato Mukherjee (San Diego, CA)
Assignee: QUALCOMM Incorporated
H02M1/08
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Quick Facts
Patent No.
US 11,916,470
App. No.
17/349,687
Granted
Feb 27, 2024
Kind
B2
Abstract

Techniques and apparatus for driving transistor gates of a switched-mode power supply (SMPS) circuit. One example power supply circuit generally includes a switching converter having a switching transistor and a gate driver having an output coupled to a gate of the switching transistor. The gate driver includes a first switching device coupled between the output of the gate driver and a first voltage rail; a second switching device coupled between the output of the gate driver and a voltage node of the gate driver; a third switching device coupled between the voltage node of the gate driver and a second voltage rail; and a voltage clamp coupled in series with a fourth switching device, the voltage clamp and the fourth switching device being coupled between a third voltage rail and the voltage node (or the output of the gate driver).

Claims (18)

1. A power supply circuit comprising:

a switching converter having a switching transistor having a source coupled to a first voltage rail; and

a gate driver having an output coupled to a gate of the switching transistor, the gate driver comprising:

a first switching device coupled between the output of the gate driver and the first voltage rail;

a second switching device coupled between the output of the gate driver and a voltage node of the gate driver;

a third switching device coupled between the voltage node of the gate driver and a second voltage rail; and

a voltage clamp coupled in series with a fourth switching device, the voltage clamp and the fourth switching device being coupled between a third voltage rail and the voltage node, wherein:

the switching transistor is a p-type transistor;

the first voltage rail has a first voltage;

the second voltage rail has a second voltage lower than the first voltage; and

the third voltage rail has a third voltage lower than the second voltage.

2. The power supply circuit of claim 1 , wherein:

the first switching device comprises another p-type transistor; and

the second, third, and fourth switching devices comprise n-type transistors.

3. The power supply circuit of claim 1 , wherein the switching converter comprises an inverting buck-boost converter and wherein the switching transistor comprises a high-side p-type transistor in the inverting buck-boost converter.

4. The power supply circuit of claim 1 , wherein the switching converter comprises a charge pump with the switching transistor.

5. The power supply circuit of claim 1 , wherein the third switching device comprises an n-type transistor having a drain coupled to the second voltage rail and having a source coupled to the voltage node.

6. A power management integrated circuit (PMIC) comprising at least a portion of the power supply circuit of claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2021
From: KWAK, TAEWOO; RUTKOWSKI, JOSEPH DALE; MUKHERJEE, SUGATO
To: QUALCOMM INCORPORATED
Reel/Frame 056795/0819 →
Continuity (2)
Provisional Application 63085341 · Sep 30, 2020
Related Publication 20220103073A1 · Mar 31, 2022