Ruggedized symmetrically bidirectional bipolar power transistor
The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).
1. A semiconductor device, comprising, on both surfaces of a first-conductivity-type semiconductor die:
an emitter/collector region of second-conductivity-type, laterally surrounded by a first insulated trench, a portion of the emitter/collector region has a first breakdown voltage;
a base contact region of first-conductivity-type, the base contact region laterally separated from the emitter/collector region by the first insulated trench, and making ohmic contact to a bulk of the semiconductor die; and
a breakdown initiation region disposed at least partially in an interior of the emitter/collector region at a non-zero distance from sides of the first insulated trench, the breakdown initiation region comprising additional second-conductivity-type dopant atoms compared to adjacent regions of second-conductivity-type dopant of the emitter/collector region, and the breakdown initiation region has a second breakdown voltage lower than the first breakdown voltage.
2. The semiconductor device of claim 1 , wherein the first-conductivity type is p-type.
3. The semiconductor device of claim 1 , wherein the second breakdown voltage between the emitter/collector regions on both surfaces of the device is more than 1000V.
4. The semiconductor device of claim 1 , wherein the semiconductor die is silicon.
5. The semiconductor device of claim 1 , wherein the breakdown initiation region contains additional second-conductivity type dopant atoms not present in other portions of the emitter/collector region, thereby creating a region of more heavily doped second-conductivity type dopant having a higher concentration of dopant.
6. The semiconductor device of claim 1 , wherein the breakdown initiation region does not change the junction depth of the emitter/collector region.
7. The semiconductor device of claim 1 , wherein the emitter/collector region comprises one or more trench segments underlain by an additional dopant component that locally reduces the first breakdown voltage.
8. The semiconductor device of claim 1 :
wherein the first insulated trench comprises a conductive electrode within the first insulated trench; and further comprising
multiple trench segments underlain by an additional dopant component which locally reduces the first breakdown voltage;
wherein the multiple trench segments are not continuous with the first insulated trench, and some of the multiple trench segments are continuous with each other.
9. A semiconductor device, comprising, on both surfaces of a first-conductivity-type semiconductor die:
an emitter/collector region of second-conductivity-type, laterally surrounded by a first insulated trench comprising a conductive electrode therein, a portion of the emitter/collector region has a first breakdown voltage;
a base contact region of first-conductivity-type, the base contact region laterally separated from the emitter/collector region by the first insulated trench, and making ohmic contact to a bulk of the semiconductor die; and
a breakdown initiation region disposed at least partially in an interior of the emitter/collector region at a non-zero distance from sides of the first insulated trench, the breakdown initiation region comprising additional second-conductivity-type dopant atoms compared to adjacent regions of second-conductivity-type dopant of the emitter/collector region, and the breakdown initiation region has a second breakdown voltage lower than the first breakdown voltage.
10. The semiconductor device of claim 9 , wherein the second breakdown voltage between the emitter/collector regions on both surfaces of the device is more than 1000V.
11. The semiconductor device of claim 9 , wherein the semiconductor die is silicon.
12. The semiconductor device of claim 9 , wherein the breakdown initiation region contain additional second-conductivity type dopant atoms not present in other portions of the emitter/collector region, thereby creating a region of more heavily doped second-conductivity type dopant having a higher concentration of dopant and exhibiting lower breakdown voltage compared to adjacent regions of second-conductivity-type dopant.
13. The semiconductor device of claim 9 , wherein the breakdown initiation region does not change the junction depth of the emitter/collector region.
14. The semiconductor device of claim 9 , wherein the conductive electrode is electrically connected to the emitter/collector region.
15. The semiconductor device of claim 9 further comprising:
a second insulated trench; and
an additional dopant component below the second insulated trench that locally reduces the first breakdown voltage.
16. The semiconductor device of claim 9 , further comprising:
a second insulated trench comprising multiple segments which are not continuous with the first insulated trench, and are also not continuous with each other, and the second insulated trench laterally surrounded by the emitter/collector region; and
an additional dopant component below the second insulated trench which locally reduces the first breakdown voltage.
17. The semiconductor device of claim 9 :
wherein the first insulated trench comprises a conductive electrode within the first insulated trench; and further comprising
multiple trench segments underlain by an additional dopant component which locally reduces the breakdown voltage;
wherein the multiple trench segments are not continuous with the first insulated trench, and some of the multiple trench segments are continuous with each other.