Package structure

1. A package structure, comprising:

a first conductive pad in an insulating layer;

a first under bump metallurgy structure under the insulating layer, wherein in a plan view, a first area of the first under bump metallurgy structure is confined within a second area of the first conductive pad; and

a first conductive via in the insulating layer and vertically connected to the first conductive pad and the first under bump metallurgy structure, wherein the first under bump metallurgy structure is in direct contact with the first conductive via at a first interface.

2. The package structure as claimed in claim 1 , wherein in a plan view, a third area of the first conductive via is confined within the first area of the first under bump metallurgy structure.

3. The package structure as claimed in claim 1 , wherein in a plan view, an edge of the first under bump metallurgy structure is entirely covered by the first conductive pad.

4. The package structure as claimed in claim 1 , further comprising:

a second conductive pad in the insulating layer and spaced apart from the first conductive pad by a first distance;

a second under bump metallurgy structure under the insulating layer and spaced apart from the first under bump metallurgy structure by a second distance that is greater than the first distance, wherein in a plan view, a third area of the second under bump metallurgy structure is confined within a fourth area of the second conductive pad; and

a second conductive via in the insulating layer and vertically connected to the second conductive pad and the second under bump metallurgy structure.

5. The package structure as claimed in claim 1 , further comprising:

a semiconductor die over the insulating layer; and

a substrate under the first under bump metallurgy structure and electrically coupled to the semiconductor die through the first under bump metallurgy structure, the first conductive via and the first conductive pad.

6. The package structure as claimed in claim 1 , further comprising:

a bonding element under the first under bump metallurgy structure;

an underfill material surrounding an upper portion of the bonding element and the first under bump metallurgy structure; and

a solder resist layer surrounding a lower portion of the bonding element.

7. The package structure as claimed in claim 6 , wherein in a plan view, the second area of the first conductive pad is confined within a third area of the bonding element.

8. The package structure as claimed in claim 1 , wherein the first under bump metallurgy structure is in direct contact with the insulating layer at a second interface, and the first interface is substantially leveled with the second interface.

9. A package structure, comprising:

a semiconductor die over a redistribution structure;

a bonding element under a first conductive pad of the redistribution structure; and

an under bump metallurgy structure sandwiched between the first conductive pad and the bonding element, wherein as measured along a first direction, a first width of the under bump metallurgy structure is less than a second width of the first conductive pad, and as measured along a second direction perpendicular to the first direction, a third width of the under bump metallurgy structure is less than a fourth width of the first conductive pad, wherein a conductive trace of the redistribution structure is in connection with the first conductive pad of the redistribution structure and a second conductive pad of the redistribution structure, wherein as measured along the first direction, a fifth width of the second conductive pad is less than the first width of the under bump metallurgy structure.

10. The package structure as claimed in claim 9 , further comprising:

a conductive via sandwiched between the first conductive pad and the under bump metallurgy structure, wherein as measured along the first direction, a sixth width of the conductive via is less than the first width of the under bump metallurgy structure.

11. The package structure as claimed in claim 9 , wherein as measured along the first direction, the conductive trace has a sixth width that is substantially consistent along a longitudinal axis of the conductive trace and less than the second width of the first conductive pad.

12. The package structure as claimed in claim 11 , wherein a first edge of the conductive trace intersects a second edge of the first conductive pad at an intersection point, and in a plan view, the intersection point is located outside of the under bump metallurgy structure.

13. The package structure as claimed in claim 12 , wherein an angle between the first edge and the second edge is an obtuse angle.

14. The package structure as claimed in claim 9 , wherein a conductive via of the redistribution structure is located above and in connection with the second conductive pad.

15. The package structure as claimed in claim 9 , further comprising:

an underfill material encapsulating the under bump metallurgy structure and the bonding element; and

a substrate under the underfill material.

16. The package structure as claimed in claim 15 , wherein the first conductive pad of the redistribution structure is electrically connected to the substrate, and the second conductive pad of the redistribution structure is electrically isolated from the substrate.

17. A package structure, comprising:

an insulating layer over an underfill material;

a first under bump metallurgy structure and a second under bump metallurgy structure embedded in the underfill material;

a first conductive pad and a second conductive pad embedded in the insulating layer, wherein the first conductive pad covers the first under bump metallurgy structure, the second conductive pad covers the second under bump metallurgy structure, and a first distance between the first conductive pad and the second conductive pad is less than a second distance between the first under bump metallurgy structure and the second under bump metallurgy structure;

a first conductive via between the first conductive pad and the first under bump metallurgy structure, wherein the first conductive via tapers from the first conductive pad toward the first under bump metallurgy structure; and

a second conductive via between the second conductive pad and the second under bump metallurgy structure, wherein the second distance is less than a third distance between the first conductive via and the second conductive via.

18. The package structure as claimed in claim 17 , further comprising:

a first bonding element partially covered by the first under bump metallurgy structure; and

a second bonding element partially covered by the second under bump metallurgy structure, wherein a third distance between the first bonding element and the second bonding element is less than the first distance.

19. The package structure as claimed in claim 17 , further comprising:

a first bonding element partially covered by the first under bump metallurgy structure; and

a second bonding element partially covered by the second under bump metallurgy structure, wherein a third distance between the first bonding element and the second bonding element is less the second distance and greater than the first distance.

20. The package structure as claimed in claim 17 , wherein a width of the first conductive via is less than a width of the first under bump metallurgy structure.