Providing recovered data to a new memory cell at a memory sub-system based on an unsuccessful error correction operation
At least one data of a set of data stored at a memory cell of a memory component is determined to be associated with an unsuccessful error correction operation. A determination is made as to whether a programming operation associated with the set of data stored at the memory cell has completed. The at least one data of the set of data stored at the memory cell that is associated with the unsuccessful error correction operation is recovered in response to determining that the programming operation has completed. Another memory cell of the memory component is identified in response to recovering the at least one data of the set of data stored at the memory cell that is associated with the unsuccessful error correction operation. The set of data including the recovered at least one data is provided to the other memory cell of the memory component.
1. A system comprising:
a memory component; and
a processing device, operatively coupled with the memory component, to:
adjust a program verify voltage associated with a set of data stored, by a first pass of a two-pass programming operation, at a first portion of the memory component to cause a first error rate of a first subset of the set of data to exceed a second error rate of a second subset of the set of data;
designate the first subset of the set of data as a proxy for estimating error rate of the second subset of the set of data;
determine that the second subset of the set of data is associated with an unsuccessful error correction operation;
responsive to completing a second pass of the two-pass programming operation with respect to the second subset of the set of data, recover the second subset of the set of data;
identify a second portion of the memory component; and
store the recovered second subset of the set of data at the second portion of the memory component.
2. The system of claim 1 , wherein the processing device is further to:
receive a second set of data associated with the set of data; and
store the second set of data at the second portion of the memory component.
3. The system of claim 1 , wherein the first portion of the memory component comprises a first block and the second portion of the memory component comprises a second block.
4. The system of claim 1 , wherein determining that the second subset of the set of data is associated with an unsuccessful error correction operation is performed in response to performing a read operation with respect to the second subset of the set of data stored at the first portion of the memory component.
5. The system of claim 1 , wherein recovering the second subset of the set of data is based on parity data associated with the set of data.
6. The system of claim 1 , wherein determining that the second subset of the set of data is associated with an unsuccessful error correction operation further comprises:
inspecting identification information stored in a data structure in association with the second subset of the set of data.
7. A method comprising:
adjusting, by a processing device, a program verify voltage associated with a set of data stored, by a first pass of a two-pass programming operation, at a first portion of a memory component to cause a first error rate of a first subset of the set of data to exceed a second error rate of a second subset of the set of data;
designating the first subset of the set of data as a proxy for estimating error rate of the second subset of the set of data;
determining that the second subset of the set of data is associated with an unsuccessful error correction operation;
responsive to completing a second pass of the two-pass programming operation with respect to the second subset of the set of data recovering the second subset of the set of data;
identifying a second portion of the memory component; and
storing the recovered second subset of the set of data at the second portion of the memory component.
8. The method of claim 7 , further comprising:
receiving a second set of data associated with the set of data; and
storing the second set of data at the second portion of the memory component.
9. The method of claim 7 , wherein the first portion of the memory component comprises a first block and the second portion of the memory component comprises a second block.
10. The method of claim 7 , wherein determining that the second subset of the set of data is associated with an unsuccessful error correction operation is performed in response to performing a read operation with respect to the second subset of the set of data stored at the first portion of the memory component.
11. The method of claim 7 , wherein recovering the second subset of the set of data is based on parity data associated with the set of data.
12. The method of claim 7 , wherein determining that the second subset of the set of data is associated with an unsuccessful error correction operation further comprises:
inspecting identification information stored in a data structure in association with the second subset of the set of data.
13. A non-transitory computer-readable storage medium comprising executable instructions that, when executed by a processing device, cause the processing device to:
adjust a program verify voltage associated with a set of data stored, by a first pass of a two-pass programming operation, at a first portion of a memory component to cause a first error rate of a first subset of the set of data to exceed a second error rate of a second subset of the set of data;
designate the first subset of the set of data as a proxy for estimating error rate of the second subset of the set of data;
determine that the second subset of the set of data is associated with an unsuccessful error correction operation;
responsive to completing a second pass of the two-pass programming operation with respect to the second subset of the set of data, recover the second subset of the set of data;
identify a second portion of the memory component; and
store the recovered second subset of the set of data at the second portion of the memory component.
14. The non-transitory computer-readable storage medium of claim 13 , comprising executable instructions that, when executed by the processing device, cause the processing device to:
receive a second set of data associated with the set of data; and
store the second set of data at the second portion of the memory component.
15. The non-transitory computer-readable storage medium of claim 13 , wherein the first portion of the memory component comprises a first block and the second portion of the memory component comprises a second block.
16. The non-transitory computer-readable storage medium of claim 13 , wherein determining that the second subset of the set of data is associated with an unsuccessful error correction operation is performed in response to performing a read operation with respect to the second subset of the set of data stored at the first portion of the memory component.
17. The non-transitory computer-readable storage medium of claim 13 , wherein recovering the second subset of the set of data is based on parity data associated with the set of data.
18. The non-transitory computer-readable storage medium of claim 13 , wherein determining that the second subset of the set of data is associated with an unsuccessful error correction operation further comprises:
inspecting identification information stored in a data structure in association with the second subset of the set of data.