Granted Patent B2

US 12,446,453 · App. 17/356,629 · Granted Oct 14, 2025

Inventor: Zhuo Chen (Beijing, CN)

Assignee: Beijing BOE Technology Development Co., Ltd.

H10K71/221G03F7/0045G03F7/162G03F7/325B82Y20/00B82Y30/00H10K50/115H10K50/15H10K50/16H10K50/17

Abstract

Claims (48)

1. A manufacturing method of a patterned quantum dot light-emitting layer, comprising:

forming a sacrificial layer on a side of a base substrate, wherein the sacrificial layer comprises a first component and a second component mixed in the first component, and the second component decomposes under a preset condition to produce bubbles, to make the first component porous;

forming a patterned photoresist layer on a side of the sacrificial layer facing away from the base substrate;

etching the sacrificial layer by taking the patterned photoresist layer as a mask to form a pattern of the sacrificial layer;

forming a quantum dot film layer on a side of the photoresist layer facing away from the sacrificial layer;

making the second component decompose under the preset condition to produce the bubbles, to make the first component form the porous structure; and

forming the patterned quantum dot light-emitting layer by removing the photoresist layer, the sacrificial layer and the quantum dot film layer attached to the sacrificial layer, by dissolution via a solvent;

wherein a material of the second component comprises one or a combination of following:

2. The manufacturing method according to claim 1 , wherein the first component is made of an alcohol-soluble polymer material.

3. The manufacturing method according to claim 1 , wherein making the second component decompose under the preset condition to produce the bubbles comprises:

heating the sacrificial layer to make the second component decompose to produce the bubbles.

4. The manufacturing method according to claim 1 , wherein the material of the second component comprises

and

making the second component decompose under the preset condition to produce the bubbles comprises:

making the second component be subjected to a following reaction process:

5. The manufacturing method according to claim 1 , wherein forming the patterned photoresist layer on the side of the sacrificial layer facing away from the base substrate comprises:

forming a patterned negative photoresist layer on the side of the sacrificial layer facing away from the base substrate.

6. The manufacturing method according to claim 1 , wherein the solvent is an alcohols solvent.

7. A manufacturing method of a quantum dot light-emitting device, comprising:

forming a first electrode on a side of a base substrate;

forming the patterned quantum dot light-emitting layer according to claim 1 on a side of the first electrode facing away from the base substrate; and

forming a second electrode on a side of the patterned quantum dot light-emitting layer facing away from the base substrate.

8. The manufacturing method according to claim 7 , wherein

before forming the quantum dot light-emitting layer on the side of the first electrode facing away from the base substrate, the method further comprises:

forming a first transport layer on a side of the first electrode facing away from the base substrate to allow the quantum dot light-emitting layer to be formed on a side of the first transport layer facing away from the first electrode; and

after forming the quantum dot light-emitting layer on the side of the first transport layer facing away from the first electrode and before forming the second electrode, the method further comprises:

forming a second transport layer on a side of the quantum dot light-emitting layer facing away from the first transport layer to allow the second electrode to be formed on a side of the second transport layer facing away from the quantum dot light-emitting layer.

9. The manufacturing method according to claim 8 , wherein the first transport layer is an electron transport layer, and the second transport layer is a hole transport layer;

wherein after forming the hole transport layer and before forming the second electrode, the manufacturing method further comprises:

forming a hole injection layer on a side of the hole transport layer facing away from the quantum dot layer to allow the second electrode to be formed on a side of the hole injection layer facing away from the hole transport layer.

10. The manufacturing method according to claim 8 , wherein the first transport layer is a hole transport layer, and the second transport layer is an electron transport layer;

wherein after forming the first electrode and before forming the hole transport layer, the method further comprises:

forming a hole injection layer on a side of the first electrode facing away from the base substrate to allow the hole transport layer to be formed on a side of the hole injection layer facing away from the first electrode.

11. A manufacturing method of a patterned quantum dot light-emitting layer, comprising:

forming a sacrificial layer on a side of a base substrate, wherein the sacrificial layer comprises a first component and a second component mixed in the first component, and the second component decomposes under a preset condition to produce bubbles, to make the first component porous;

forming a patterned photoresist layer on a side of the sacrificial layer facing away from the base substrate;

etching the sacrificial layer by taking the patterned photoresist layer as a mask to form a pattern of the sacrificial layer;

forming a quantum dot film layer on a side of the photoresist layer facing away from the sacrificial layer;

making the second component decompose under the preset condition to produce the bubbles, to make the first component form the porous structure; and

forming the patterned quantum dot light-emitting layer by removing the photoresist layer, the sacrificial layer and the quantum dot film layer attached to the sacrificial layer, by dissolution via a solvent;

wherein a material of the first component comprises polyvinylpyrrolidone.

12. A manufacturing method of a patterned quantum dot light-emitting layer, comprising:

forming a sacrificial layer on a side of a base substrate, wherein the sacrificial layer comprises a first component and a second component mixed in the first component, and the second component decomposes under a preset condition to produce bubbles, to make the first component porous;

forming a patterned photoresist layer on a side of the sacrificial layer facing away from the base substrate;

etching the sacrificial layer by taking the patterned photoresist layer as a mask to form a pattern of the sacrificial layer;

forming a quantum dot film layer on a side of the photoresist layer facing away from the sacrificial layer;

making the second component decompose under the preset condition to produce the bubbles, to make the first component form the porous structure; and

forming the patterned quantum dot light-emitting layer by removing the photoresist layer, the sacrificial layer and the quantum dot film layer attached to the sacrificial layer, by dissolution via a solvent; wherein the solvent comprises propanol, n-butanol or isobutanol.

Assignments (3)

Priority Claims (1)

Continuity (1)

References Cited (12)