Bonded body of piezoelectric material substrate and supporting substrate
A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. At least one of a bonding surface of the supporting substrate and a bonding surface of the piezoelectric material substrate, as measured by spectral ellipsometry with Δ being assigned to a difference of phases of p-polarized light and s-polarized light of a reflected light, has a difference of the maximum and minimum values of the difference Δ of the phases in a wavelength range of 400 nm to 760 nm of 70° or lower.
1. A bonded body comprising:
a supporting substrate;
a piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate;
a bonding layer bonding said supporting substrate and said piezoelectric material substrate,
wherein at least one of a bonding surface of said supporting substrate and a bonding surface of said piezoelectric material substrate has a difference of the maximum and minimum values of Δ of 70° or lower when the bonding surface is measured by spectral ellipsometry and Δ is assigned to a difference of phases of p-polarized light and s-polarized light of a reflected light in a wavelength range of 400 nm to 760 nm; and
a surface denatured region adjacent said at least one bonding surface, the surface denatured region disposed to being subjected to said spectral ellipsometry when A is measured.
2. The bonded body of claim 1 , wherein said at least one bonding surface adjacent said surface denatured region has a roughened surface.
3. The bonded body of claim 1 , wherein the bonded body has a spurious value of 4.8 dB or less.
4. The bonded body of claim 1 , wherein said bonding layer comprises a material selected from the group consisting of silicon oxide, silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide.
5. The bonded body of claim 1 , wherein said difference Δ of said phases is 20° or higher.
6. The bonded body of claim 1 , wherein said difference Δ of said phases is 65° or lower.
7. The bonded body of claim 1 , wherein said difference Δ of said phases is 60° or lower and 25° or higher.
8. The bonded body of claim 1 , wherein said bonding surface of said supporting substrate has a difference Δ of said phases of 70° or lower.
9. The bonded body of claim 1 , wherein said supporting substrate comprises a material selected from the group consisting of silicon, quartz, sialon, mullite, sapphire and translucent alumina.
10. The bonded body of claim 1 , wherein said supporting substrate comprises silicon.
11. The bonded body of claim 1 , wherein said supporting substrate comprises said at least one bonding surface adjacent said surface denatured region.
12. The bonded body of claim 1 , wherein said at least one bonding surface adjacent said surface denatured region is provided by grinding with grinding stones, by blast processing with micro media or by ion beam processing.
13. The bonded body of claim 12 , wherein said at least one bonding surface adjacent said surface denatured region is provided by grinding with grinding stones, by blast processing with micro media or by ion beam processing of a mirror surface.
14. The bonded body of claim 12 , wherein said at least one bonding surface adjacent said surface denatured region is provided by grinding with grinding stones of #6000 to #8000.
15. The bonded body of claim 12 , wherein said at least one bonding surface adjacent said surface denatured region is provided by blast processing with micro media comprising alumina or silicon nitride.
16. The bonded body of claim 12 , wherein said at least one bonding surface adjacent said surface denatured region is provided by ion beam processing with colliding Ar ions.