Optical isolator and photonic integrated circuit including the same
Provided is an optical isolator including a semiconductor substrate, an optical attenuator and an optical amplifier aligned with each other on the semiconductor substrate, an input optical waveguide connected to the optical attenuator, and an output optical waveguide connected to the optical amplifier, wherein a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing, wherein a first input light incident on the optical attenuator through the input optical waveguide is output as a first output light through the output optical waveguide, and a second input light incident on the optical amplifier through the output optical waveguide is output as a second output light through the input optical waveguide, and wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light.
1. An optical isolator comprising:
a semiconductor substrate;
an optical attenuator and an optical amplifier provided on the semiconductor substrate;
an input optical waveguide connected to the optical attenuator; and
an output optical waveguide connected to the optical amplifier,
wherein a gain of the optical amplifier decreases when an intensity of light incident on the optical amplifier increases,
wherein first input light incident on the optical attenuator through the input optical waveguide is output as first output light through the output optical waveguide, and second input light incident on the optical amplifier through the output optical waveguide is output as second output light through the input optical waveguide,
wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light,
wherein each of the optical attenuator and the optical amplifier includes a semiconductor material having a direct bandgap, and
wherein a carrier density of the semiconductor material of the optical attenuator is less than a transparency carrier density, and a carrier density of the semiconductor material of the optical amplifier is greater than the transparency carrier density.
2. The optical isolator of claim 1 , further comprising a waveguide layer provided on the semiconductor substrate,
wherein the input optical waveguide and the output optical waveguide are included in the waveguide layer, and
wherein the optical attenuator and the optical amplifier are provided on the waveguide layer.
3. The optical isolator of claim 2 , wherein the input optical waveguide and the output optical waveguide continuously extend in the waveguide layer in a traveling direction of light.
4. The optical isolator of claim 2 , wherein the input optical waveguide and the output optical waveguide are spaced apart from each other,
wherein the input optical waveguide has a tapered end provided under the optical attenuator, and
wherein the output optical waveguide has a tapered end provided under the optical amplifier.
5. The optical isolator of claim 2 , wherein the semiconductor substrate comprises a semiconductor layer and a dielectric layer that is provided over an entire area of an upper surface of the semiconductor layer.
6. The optical isolator of claim 2 , wherein the semiconductor substrate comprises a semiconductor layer and a dielectric layer that is provided over a partial area of an upper surface of the semiconductor layer in a traveling direction of light, and
wherein the dielectric layer faces the optical attenuator and the optical amplifier in a region between the semiconductor layer and the waveguide layer.
7. The optical isolator of claim 2 , wherein each of the optical attenuator and the optical amplifier comprises:
a first contact layer provided on the waveguide layer;
a gain material layer provided on the first contact layer;
a clad semiconductor layer provided on the gain material layer; and
a second contact layer provided on the clad semiconductor layer.
8. The optical isolator of claim 7 , wherein the first contact layer of the optical attenuator is integrally formed with the first contact layer of the optical amplifier, and
wherein the first contact layer of the optical attenuator and the first contact layer of the optical amplifier extend in a traveling direction of light.
9. The optical isolator of claim 8 , wherein the gain material layer, the clad semiconductor layer, and the second contact layer of the optical attenuator are separated from the gain material layer, the clad semiconductor layer, and the second contact layer of the optical amplifier.
10. The optical isolator of claim 9 , wherein the optical attenuator and the optical amplifier commonly comprise a first electrode provided on the first contact layer of the optical attenuator and the first contact layer of the optical amplifier,
wherein the optical attenuator comprises a second electrode provided on the second contact layer of the optical attenuator, and
wherein the optical amplifier comprises a second electrode provided on the second contact layer of the optical amplifier.
11. The optical isolator of claim 9 , wherein lengths of the gain material layer, the clad semiconductor layer, and the second contact layer of the optical amplifier in the traveling direction of light are greater than lengths of the gain material layer, the clad semiconductor layer, and the second contact layer of the optical attenuator in the traveling direction of light.
12. The optical isolator of claim 9 , wherein the gain material layer included in the optical attenuator is configured to:
absorb light based on a backward voltage being applied to the gain material layer included in the optical attenuator; and
amplify light based on a forward voltage being applied to the gain material layer included in the optical amplifier.
13. The optical isolator of claim 12 , wherein a voltage that allows the carrier density to be less than a transparency carrier density in the gain material layer of the optical attenuator is applied to the gain material layer of the optical attenuator, and a voltage that allows the carrier density to be greater than the transparency carrier density in the gain material layer of the optical amplifier is applied to the gain material layer of the optical amplifier.
14. The optical isolator of claim 7 , wherein each of the optical attenuator and the optical amplifier has a rib-type waveguide shape in which a width of the first contact layer in a direction perpendicular to a traveling direction of light is greater than widths of the gain material layer, the clad semiconductor layer, and the second contact layer.
15. The optical isolator of claim 7 , wherein both sides of the first contact layer, the gain material layer, the clad semiconductor layer, and the second contact layer in a traveling direction of light have tapered ends.
16. The optical isolator of claim 7 , wherein the first contact layer, the gain material layer, the clad semiconductor layer, and the second contact layer of the optical attenuator are separated from the first contact layer, the gain material layer, the clad semiconductor layer, and the second contact layer of the optical amplifier.
17. The optical isolator of claim 1 , wherein the optical attenuator comprises a first optical attenuator and a second optical attenuator,
wherein the optical amplifier comprises a first optical amplifier and a second optical amplifier, and
wherein the first optical attenuator, the first optical amplifier, the second optical attenuator, and the second optical amplifier are arranged in order in thea traveling direction of light.
18. The optical isolator of claim 1 , wherein when the intensity of the first input light and the intensity of the second input light are equal, the intensity of the first output light is 1000 times or more greater than the intensity of the second output light.
19. A photonic integrated circuit comprising an optical isolator configured to integrate through a semiconductor manufacturing process, the optical isolator comprising:
a semiconductor substrate;
an optical attenuator and an optical amplifier provided on the semiconductor substrate;
an input optical waveguide connected to the optical attenuator;
an output optical waveguide connected to the optical amplifier,
wherein a gain of the optical amplifier decreases when an intensity of input light increases,
wherein first input light incident on the optical attenuator through the input optical waveguide is output as first output light through the output optical waveguide, and second input light incident on the optical amplifier through the output optical waveguide is output as second output light through the input optical waveguide,
wherein, when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light,
wherein each of the optical attenuator and the optical amplifier includes a semiconductor material having a direct bandgap, and
wherein a carrier density of the semiconductor material of the optical attenuator is less than a transparency carrier density, and a carrier density of the semiconductor material of the optical amplifier is greater than the transparency carrier density.
20. A light detection and ranging apparatus comprising:
a light source;
a photodetector;
an antenna connected to the light source and the photodetector, the antenna being configured to emit light to an outside or receive light from the outside; and
an optical isolator connected between the light source and the antenna, the optical isolator being configured to transmit light in a direction from the light source to the antenna,
wherein the optical isolator comprises:
a semiconductor substrate;
an optical attenuator and an optical amplifier provided on the semiconductor substrate;
an input optical waveguide connected to the optical attenuator; and
an output optical waveguide connected to the optical amplifier,
wherein a gain of the optical amplifier decreases when an intensity of input light increases,
wherein first input light incident on the optical attenuator through the input optical waveguide is output as first output light through the output optical waveguide, and second input light incident on the optical amplifier through the output optical waveguide is output as second output light through the input optical waveguide,
wherein, when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light,
wherein each of the optical attenuator and the optical amplifier includes a semiconductor material having a direct bandgap, and
wherein a carrier density of the semiconductor material of the optical attenuator is less than a transparency carrier density, and a carrier density of the semiconductor material of the optical amplifier is greater than the transparency carrier density.
21. An optical communication system comprising:
a first communication terminal including a first optical transmitter and a first optical receiver;
a second communication terminal including a second optical transmitter and a second optical receiver;
an optical waveguide connecting the first communication terminal to the second communication terminal;
a first optical isolator configured to transmit light in a direction from the first optical transmitter of the first communication terminal to the optical waveguide; and
a second optical isolator configured to transmit light in a direction from the second optical transmitter of the second communication terminal to the optical waveguide,
wherein each of the first optical isolator and the second optical isolator comprises:
a semiconductor substrate;
an optical attenuator and an optical amplifier provided on the semiconductor substrate;
an input optical waveguide connected to the optical attenuator; and
an output optical waveguide connected to the optical amplifier,
wherein a gain of the optical amplifier decreases when an intensity of input light increases,
wherein first input light incident on the optical attenuator through the input optical waveguide is output as first output light through the output optical waveguide, and a second input light incident on the optical amplifier through the output optical waveguide is output as second output light through the input optical waveguide, and
wherein, when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light.
22. An optical isolator comprising:
a semiconductor substrate;
an optical attenuator provided on the semiconductor substrate;
an optical amplifier provided on the semiconductor substrate and adjacent to the optical attenuator;
an input optical waveguide provided adjacent to the optical attenuator opposite to the optical amplifier; and
an output optical waveguide provided adjacent to the optical amplifier opposite to the optical attenuator,
wherein a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing,
wherein each of the optical attenuator and the optical amplifier includes a semiconductor material having a direct bandgap, and
wherein a carrier density of the semiconductor material of the optical attenuator is less than a transparency carrier density, and a carrier density of the semiconductor material of the optical amplifier is greater than the transparency carrier density.