Semiconductor device having isolation structures in pixel region and manufacturing method thereof

1 . A semiconductor structure, comprising:

a device layer, comprising a terminal region and a pixel region adjacent to the terminal region;

a conductive pad in the terminal region; and

an isolation structure in the pixel region, wherein the isolation structure comprises a first conductive material, and wherein the isolation structure further comprising:

a plurality of first isolation structures, and

a plurality of second isolation structures laterally adjacent to the plurality of first isolation structures, a bottom of each of the second isolation structures is at a level substantially identical to a bottom of each of the first isolation structures, and a top of each of the second isolation structures is at a level above a top of each of the first isolation structures;

wherein a top surface of the conductive pad is above the top of each of the first isolation structures, and a bottom-most surface of the conductive pad as a whole is above the bottom of each of the first isolation structures and below the top of each of the first isolation structures, the bottom-most surface of the conductive pad is in connection to a plurality of conductive vias, and the conductive pad is closer to the first isolation structures than the second isolation structures.

2 . The semiconductor structure of claim 1 , wherein the plurality of conductive vias connect the bottom-most surface of the conductive pad to a logic layer underlying the device layer.

3 . The semiconductor structure of claim 1 , wherein the isolation structure is a trench isolation structure between pixels, and the first conductive material is aluminum.

4 . The semiconductor structure of claim 2 , wherein the conductive pad comprises a second conductive material and a third conductive material different from the second conductive material, wherein the second conductive material laterally surrounds the third conductive material, and wherein the conductive via comprises only the second conductive material.

5 . The semiconductor structure of claim 4 , wherein a portion of the second conductive material of the conductive pad further comprises a concave surface over the conductive via, and the concave surface is in contact with the third conductive material.

6 . The semiconductor structure of claim 1 , wherein the conductive pad is electrically connected to the isolation structure.

7 . A semiconductor structure, comprising:

a device layer, comprising a terminal region and a pixel region adjacent to the terminal region;

a conductive pad in the terminal region;

a plurality of isolation structures in the pixel region, comprising a first plurality of isolation structures and a second plurality of isolation structures, wherein a bottom of each of the first plurality of isolation structures is at a level substantially identical to a bottom of each of the second plurality of isolation structures, and wherein a top surface of the conductive pad is above a top of each of the first plurality of isolation structures, and a bottom-most surface of the conductive pad as a whole is above the bottom of each of the first plurality of isolation structures and below the top of each of the first plurality of isolation structures; and

a conductive layer crossing over the terminal region and the pixel region, electrically connecting the conductive pad and the plurality of isolation structures, wherein the conductive layer continuously extends over the first plurality of isolation structures and without covering the second plurality of isolation structures.

8 . The semiconductor structure of claim 7 , wherein the first plurality of isolation structures is under a vertical projection of the conductive layer.

9 . The semiconductor structure of claim 7 , wherein the plurality of isolation structures comprises a conductive material.

10 . The semiconductor structure of claim 7 , wherein the first plurality of isolation structures is electrically connected to the second plurality of isolation structures.

11 . The semiconductor structure of claim 7 , wherein a top surface of each of the second plurality of isolation structures is at a level above a level of a top surface of each of the first plurality of isolation structures.

12 . The semiconductor structure of claim 7 , further comprising:

a logic layer stacked with the device layer; and

a conductive via connecting a bottom of the conductive pad to a metallization structure of the logic layer.

13 . The semiconductor structure of claim 7 , wherein a height of each of the first plurality of isolation structures is different from a height of each of the second plurality of isolation structures.

14 . A method for fabricating a semiconductor structure, comprising:

forming a plurality of isolation structures in a pixel region of a device layer, wherein the pixel region is between a terminal region and a functional region in which one or more functional structures are disposed, and wherein forming the plurality of isolation structures comprising:

forming a first conductive material in a plurality of first recesses in the pixel region of the device layer, wherein a height of the plurality of first recesses is the same; and

planarizing the first conductive material to form a plurality of second isolation structures in the plurality of first recesses;

removing a portion of the first conductive material from a top of a portion of the plurality of second isolation structures to form a plurality of first isolation structures;

depositing a second conductive material to simultaneously form a conductive pad in the terminal region of the device layer and a conductive layer over the top of the plurality of first isolation structures in the pixel region, the conductive layer being electrically connecting the first isolation structures and the conductive pad, wherein the second conductive material covers the second isolation structures and the functional region.

15 . The method of claim 14 , wherein depositing the second conductive material to form the conductive pad comprises performing a conductive pad trench forming operation prior to the second conductive material deposition operation.

16 . The method of claim 15 , wherein the second conductive material deposition operation comprises a Cu or AlCu chemical vapor deposition and an AlCu physical vapor deposition.

17 . The method of claim 15 , further comprising forming a conductive via trench from a bottom surface of the conductive pad trench.

18 . The method of claim 14 , further comprising forming a protection layer over the terminal region and the pixel region after forming the conductive pad and the conductive layer.

19 . The method of claim 18 , further comprising exposing a portion of a top surface of the conductive pad from the protection layer.

20 . The method of claim 14 , wherein the plurality of first isolation structures formed from the portion number of the plurality of second isolation structures are in proximity to a first lateral side of the pixel region, and another portion number of the plurality of second isolation structures free from being used to form the plurality of first isolation structures are in proximity to a second lateral side of the pixel region opposite to the first lateral side of the pixel region.