Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate

1. A method of manufacturing a group III nitride crystal comprising:

preparing a seed substrate in a growth chamber followed by heating the growth chamber to a growth temperature of 1,000 to 1,800° C.;

generating a group III element oxide gas;

supplying the group III element oxide gas to the growth chamber;

supplying a nitrogen element-containing gas to the growth chamber;

supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO 2 gas, N 2 O gas, and N 2 O 4 gas to the growth chamber, wherein the oxidizing gas containing nitrogen element is supplied before the seed substrate reaches a substrate temperature of 1050° C.;

reacting the oxidizing gas containing nitrogen element with a group III element droplet formed on a surface of the seed substrate; and

growing the group III nitride crystal on the seed substrate.

2. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied at a partial pressure of 7.00×10 −4 atm or more and 1.75×10 −3 atm or less.

3. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied at a partial pressure of 7.60×10 −4 atm or more and 1.30×10 −3 atm or less.